No Arabic abstract
We calculate the leading order corrections (in $r_s$) to the static polarization $Pi^{*}(q,0,)$, with dynamically screened interactions, for the two-dimensional electron gas. The corresponding diagrams all exhibit singular logarithmic behavior in their derivatives at $q=2 k_F$ and provide significant enhancement to the proper polarization particularly at low densities. At a density of $r_s=3$, the contribution from the leading order {em fluctuational} diagrams exceeds both the zeroth order (Lindhard) response and the self-energy and exchange contributions. We comment on the importance of these diagrams in two-dimensions and make comparisons to an equivalent three-dimensional electron gas; we also consider the impact these finding have on $Pi^{*}(q,0)$ computed to all orders in perturbation theory.
Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O2 exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy.
We develop a theory for the non-equilibrium screening of a charged impurity in a two-dimensional electron system under a strong time-periodic drive. Our analysis of the time-averaged polarization function and dielectric function reveals that Floquet driving modifies the screened impurity potential in two main regimes. In the weak drive regime, the time-averaged screened potential exhibits unconventional Friedel oscillations with multiple spatial periods contributed by a principal period modulated by higher-order periods, which are due to the emergence of additional Kohn anomalies in the polarization function. In the strong drive regime, the time-averaged impurity potential becomes almost unscreened and does not exhibit Friedel oscillations. This tunable Friedel oscillations is a result of the dynamic gating effect of the time-dependent driving field on the two-dimensional electron system.
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the mobility was high enough ($mu ~> 1 m^2/Vs$), consistent with the assertion that this transition is driven by electron-electron interactions. In a perpendicular magnetic field, the magnetoconductance is positive in the vicinity of the transition, but negative elsewhere. Our experiment suggests that such behavior results from a decrease of the spin-dependent part of the interaction in the vicinity of the transition.
We show that in two dimensions (2D) a systematic expansion of the self-energy and the effective interaction of the dilute electron gas in powers of the two-body T-matrix T_0 can be generated from the exact hierarchy of functional renormalization group equations for the one-particle irreducible vertices using the chemical potential as flow parameter. Due to the interference of particle-particle and particle-hole channels at order T_0^2, in 2D the ladder approximation for the self-energy is not reliable beyond the leading order in T_0. We also discuss two-body scattering in vacuum in arbitrary dimensions from the renormalization group point of view and argue that the singular interaction proposed by Anderson [Phys. Rev. Lett. 65, 2306 (1990)] cannot be ruled out on the basis of the ladder approximation.
We find that the spin susceptibility of a two-dimensional electron system with valley degeneracy does not grow critically at low densities, at variance with experimental results [A. Shashkin et al., Phys. Rev. Lett. 96, 036403 (2006)]. We ascribe this apparent discrepancy to the weak disorder present in experimental samples. Our prediction is obtained from accurate correlation energies computed with state of-the-art diffusion Monte Carlo simulations and fitted with an analytical expression which also provides a local spin density functional for the system under investigation.