Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userValley Hall effect caused by the phonon and photon drag
212
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Valley Hall effect is an appearance of the valley current in the direction transverse to the electric current. We develop the microscopic theory of the valley Hall effect in two-dimensional semiconductors where the electrons are dragged by the phonons or photons. We derive and analyze all relevant contributions to the valley current including the skew-scattering effects together with the anomalous contributions caused by the side-jumps and the anomalous velocity. The partial compensation of the anomalous contributions is studied in detail. The role of two-phonon and two-impurity scattering processes is analyzed. We also compare the valley Hall effect under the drag conditions and the valley Hall effect caused by the external static electric field.
rate research
Read More
We study the temperature dependence of thermoelectric transport properties of four FeSb2 nanocomposite samples with different grain sizes. The comparison of the single crystals and nanocomposites of varying grain size indicates the presence of substantial phonon drag effects in this system contributing to a large Seebeck coefficient at low temperature. As the grain size decreases, the increased phonon scattering at the grain boundaries leads to a suppression of the phonon-drag effect, resulting in a much smaller peak value of the Seebeck coefficient in the nanostructured bulk materials. As a consequence, the ZT values are not improved significantly even though the thermal conductivity is drastically reduced.
We predict an anomalous thermal Hall effect (ATHE) mediated by photons in networks of Weyl semi-metals. Contrary to the photon thermal Hall effect in magneto-optical systems which requires the application of an external magnetic field the ATHE in a Weyl semi-metals network is an intrinsic property of these systems. Since the Weyl semi-metals can exhibit a strong nonreciprocal response in the infrared over a broad spectral range the magnitude of thermal Hall flux in these systems can be relatively large compared to the primary flux. This ATHE paves the way for a directional control of heat flux by localy tuning the magnitude of temperature field without changing the direction of temperature gradient.
2D materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing to explore novel phenomena and applications, but have been largely overlooked up to date. Here, using first-principles calculations, we present that valley related multiple Hall effect can exist in single-layer VSi2P4. We identify single-layer VSi2P4 as a ferromagnetic semiconductor with out-of-plane magnetization and valley physics. Arising from the joint effect of inversion symmetry breaking and time reversal symmetry breaking, the exotic spontaneous valley polarization occurs in single-layer VSi2P4, thus facilitating the observation of anomalous valley Hall effect. Moreover, under external strain, band inversion can occur at only one of the valleys of single-layer VSi2P4, enabling the long-sought valley-polarized quantum anomalous Hall effect, and meanwhile the anomalous valley Hall effect is well preserved.. Our work not only enriches the research on valley-related multiple Hall effect, but also opens a new avenue for exploring valley-polarized quantum anomalous Hall effect.
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one single system, likely to enable important unexplored phenomena and applications, has been largely overlooked so far. Here, by combining a tight-binding model with first-principles calculations, we find the large-band-gap quantum spin Hall effects (QSHEs) and valley Hall effects (VHEs) appear simultaneously in the Bi monolayers decorated with halogen elements, denoted as Bi2XY (X, Y = H, F, Cl, Br, or I). A staggered exchange field is introduced into the Bi2XY monolayers by transition metal atom (Cr, Mo, or W) doping or LaFeO3 magnetic substrates, which together with the strong SOC of Bi atoms generates a time-reversal-symmetry-broken QSHE and a huge valley splitting (up to 513 meV) in the system. With gate control, QSHE and anomalous charge, spin, valley Hall effects can be observed in the single system. These predicted multiple and exotic Hall effects, associated with various degrees of freedom of electrons, could enable applications of the functionalized Bi monolayers in electronics, spintronics, and valleytronics.
The acoustic phonon-mediated drag-contribution to the drag current created in the ballistic transport regime in a one-dimensional nanowire by phonons generated by a current-carrying ballistic channel in a nearby nanowire is calculated. The threshold of the phonon-mediated drag current with respect to bias or gate voltage is predicted.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
