Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userTunneling from a correlated 2D electron system transverse to a magnetic field
107
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We show that, in a magnetic field parallel to the 2D electron layer, strong electron correlations change the rate of tunneling from the layer exponentially. It results in a specific density dependence of the escape rate. The mechanism is a dynamical Mossbauer-type recoil, in which the Hall momentum of the tunneling electron is partly transferred to the whole electron system, depending on the interrelation between the rate of interelectron momentum exchange and the tunneling duration. We also show that, in a certain temperature range, magnetic field can enhance rather than suppress the tunneling rate. The effect is due to the magnetic field induced energy exchange between the in-plane and out-of-plane motion. Magnetic field can also induce switching between intra-well states from which the system tunnels, and a transition from tunneling to thermal activation. Explicit results are obtained for a Wigner crystal. They are in qualitative and quantitative agreement with the relevant experimental data, with no adjustable parameters.
rate research
Read More
We consider the effect of electron correlations on tunneling from a 2D electron layer in a magnetic field parallel to the layer. A tunneling electron can exchange its momentum with other electrons, which leads to an exponential increase of the tunneling rate compared to the single-electron approximation. Explicit results are obtained for a Wigner crystal. They provide a qualitative and quantitative explanation of the data on electrons on helium. We also discuss tunneling in semiconductor heterostructures.
The electron tunneling is experimentally studied between two-dimensional electron gases (2DEGs) formed in a single-doped-barrier heterostructure in the magnetic fields directed perpendicular to the 2DEGs planes. It is well known that the quantizing magnetic field induces the Coulomb pseudogap suppressing the electron tunneling at Fermi level. In this paper we firstly present the experimental results revealing the pseudogap in the electron tunneling assisted by elastic electron scattering on disorder.
We have studied experimentally the influence of a parallel magnetic field ($B_{//}$) on microwave-induced resistance oscillations (MIRO) and zero-resistance states (ZRS) previously discovered in a high-mobility 2D electron system. We have observed a strong suppression of MIRO/ZRS by a modest $B_{//}sim 0.5$ T. In Hall bar samples, magnetoplasmon resonance (MPR) has also been observed concurrently with the MIRO/ZRS. In contrast to the suppression of MIRO/ZRS, the MPR peak is found to be enhanced by $B_{//}$. These findings have not been addressed by current models proposed to explain the microwave-induced effects.
We compute the single-particle states of a two-dimensional electron gas confined to the surface of a cylinder immersed in a magnetic field. The envelope-function equation has been solved exactly for both an homogeneous and a periodically modulated magnetic field perpendicular to the cylinder axis. The nature and energy dispersion of the quantum states reflects the interplay between different lengthscales, namely, the cylinder diameter, the magnetic length, and, possibly, the wavelength of the field modulation. We show that a transverse homogeneous magnetic field drives carrier states from a quasi-2D (cylindrical) regime to a quasi-1D regime where carriers form channels along the cylinder surface. Furthermore, a magnetic field which is periodically modulated along the cylinder axis may confine the carriers to tunnel-coupled stripes, rings or dots on the cylinder surface, depending on the ratio between the the field periodicity and the cylinder radius. Results in different regimes are traced to either incipient Landau levels formation or Aharonov-Bohm behaviour.
Electron Raman scattering (ERS) is investigated in a parabolic semiconductor quantum wire in a transverse magnetic field neglecting by phonon-assisted transitions. The ERS cross-section is calculated as a function of a frequency shift and magnetic field. The process involves an interband electronic transition and an intraband transition between quantized subbands. We analyze the differential cross-section for different scattering configurations. We study selection rules for the processes. Some singularities in the Raman spectra are found and interpreted. The scattering spectrum shows density-of-states peaks and interband matrix elements maximums and a strong resonance when scattered frequency equals to the hybrid frequency or confinement frequency depending on the light polarization. Numerical results are presented for a GaAs/AlGaAs quantum wire.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
