A scenario of quantum computing process based on the manipulation of a large number of nuclear spins in Quantum Hall (QH) ferromagnet is presented. It is found that vacuum quantum fluctuations in the QH ferromagnetic ground state at filling factor $ u =1$, associated with the virtual excitations of spin waves, lead to fast incomplete decoherence of the nuclear spins. A fundamental upper bound on the length of the computer memory is set by this fluctuation effect.
A coherent superposition of many nuclear spin states can be prepared and manipulated via the hyperfine interaction with the electronic spins by varying the Landau level filling factor through the gate voltage in appropriately designed Quantum Hall Ferromagnet. During the manipulation periods the 2D electron system forms spatially large Skyrmionic spin textures, where many nuclear spins follow locally the electron spin polarization. It is shown that the collective spin rotation of a single spin texture is gapless in the limit of zero Zeeman splitting, and may dominate the nuclear spins relaxation and decoherence processes in the quantum well.
We present dynamic nuclear polarization (DNP) in the simplest pseudospin quantum Hall ferromagnet (QHF) of an InSb two-dimensional electron gas with a large g factor using tilted magnetic fields. The DNP-induced amplitude change of a resistance spike of the QHF at large current enables observation of the resistively detected nuclear magnetic resonance of the high nuclear spin isotope 115In with nine quadrupole splittings. Our results demonstrate the importance of domain structures in the DNP process. The nuclear spin relaxation time T1 in this QHF was relatively short (~ 120 s), and almost temperature independent.
Long coherence times are key to the performance of quantum bits (qubits). Here, we experimentally and theoretically show that the Hahn-echo coherence time (T2) of electron spins associated with divacancy defects in 4H-SiC reaches 1.3 ms, one of the longest T2 times of an electron spin in a naturally isotopic crystal. Using a first-principles microscopic quantum-bath model, we find that two factors determine the unusually robust coherence. First, in the presence of moderate magnetic fields (300 G and above), the 29Si and 13C paramagnetic nuclear spin baths are decoupled. In addition, because SiC is a binary crystal, homo-nuclear spin pairs are both diluted and forbidden from forming strongly coupled, nearest-neighbor spin pairs. Longer neighbor distances result in fewer nuclear spin flip-flops, a less fluctuating intra-crystalline magnetic environment, and thus a longer T2 time. Our results point to polyatomic crystals as promising hosts for coherent qubits in the solid state.
Using a conventional Hall-bar geometry with a micro-metal strip on top of the surface, we demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconductor heterostructure. A breakdown of integer quantum Hall (QH) effect is utilized to dynamically polarize nuclear spins. By applying a pulse rf magnetic field with the metal strip, the quantum state of the nuclear spins shows Rabi oscillations, which is detected by measuring longitudinal voltage of the QH conductor.
Time-dependent capacitance measurements reveal an unstable phase of electrons in gallium arsenide quantum well that occurs when two Landau levels with opposite spin are brought close to degeneracy by applying a gate voltage. This phase emerges below a critical temperature and displays a peculiar non-equilibrium dynamical evolution. The relaxation dynamics is found to follow a stretched exponential behavior and correlates with hysteresis loops observed by sweeping the magnetic field. These experiments indicate that metastable randomly-distributed magnetic domains are involved in the relaxation process in a way that is equivalently tunable by a change in gate voltage or temperature.