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We investigate the time dependent thermal relaxation of a two-dimensional electron system in the fractional quantum Hall regime where ballistic phonons are used to heat up the system to a non-equilibrium temperature. The thermal relaxation of a 2DES at $ u=1/2$ can be described in terms of a broad band emission of phonons, with a temperature dependence proportional to $T^4$. In contrast, the relaxation at fractional filling $ u=2/3$ is characterized by phonon emission around a single energy, the magneto-roton gap. This leads to a strongly reduced energy relaxation rate compared to $ u=1/2$ with only a weak temperature dependence for temperatures 150 mK $< T <$ 400 mK.
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Suppose a classical electron is confined to move in the $xy$ plane under the influence of a constant magnetic field in the positive $z$ direction. It then traverses a circular orbit with a fixed positive angular momentum $L_z$ with respect to the center of its orbit. It is an underappreciated fact that the quantum wave functions of electrons in the ground state (the so-called lowest Landau level) have an azimuthal dependence $propto exp(-imphi) $ with $mgeq 0$, seemingly in contradiction with the classical electron having positive angular momentum. We show here that the gauge-independent meaning of that quantum number $m$ is not angular momentum, but that it quantizes the distance of the center of the electrons orbit from the origin, and that the physical angular momentum of the electron is positive and independent of $m$ in the lowest Landau levels. We note that some textbooks and some of the original literature on the fractional quantum Hall effect do find wave functions that have the seemingly correct azimuthal form $proptoexp(+imphi)$ but only on account of changing a sign (e.g., by confusing different conventions) somewhere on the way to that result.
We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be explained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.
The interplay between interaction and disorder-induced localization is of fundamental interest. This article addresses localization physics in the fractional quantum Hall state, where both interaction and disorder have nonperturbative consequences. We provide compelling theoretical evidence that the localization of a single quasiparticle of the fractional quantum Hall state at filling factor $ u=n/(2n+1)$ has a striking {it quantitative} correspondence to the localization of a single electron in the $(n+1)$th Landau level. By analogy to the dramatic experimental manifestations of Anderson localization in integer quantum Hall effect, this leads to predictions in the fractional quantum Hall regime regarding the existence of extended states at a critical energy, and the nature of the divergence of the localization length as this energy is approached. Within a mean field approximation these results can be extended to situations where a finite density of quasiparticles is present.
We present measurements of optical interband absorption in the fractional quantum Hall regime in a GaAs quantum well in the range 0 < nu < 1. We investigate the mechanism of singlet trion absorption, and show that its circular dichroism can be used as a probe of the spin polarization of the ground state of the two-dimensional electron system (2DES). We find that at nu = 1/3 the 2DES is fully spin-polarized. Increasing the filling factor results in a gradual depolarization, with a sharp minimum in the dichroism near nu = 2/3. We find that in the range 0.5 < nu < 0.85 the 2DES remains partially polarized for the broad range of magnetic fields from 2.75 to 11 Tesla. This is consistent with the presence of a mixture of polarized and depolarized regions.
When electrons are confined in two dimensions and subjected to strong magnetic fields, the Coulomb interactions between them become dominant and can lead to novel states of matter such as fractional quantum Hall liquids. In these liquids electrons linked to magnetic flux quanta form complex composite quasipartices, which are manifested in the quantization of the Hall conductivity as rational fractions of the conductance quantum. The recent experimental discovery of an anomalous integer quantum Hall effect in graphene has opened up a new avenue in the study of correlated 2D electronic systems, in which the interacting electron wavefunctions are those of massless chiral fermions. However, due to the prevailing disorder, graphene has thus far exhibited only weak signatures of correlated electron phenomena, despite concerted experimental efforts and intense theoretical interest. Here, we report the observation of the fractional quantum Hall effect in ultraclean suspended graphene, supporting the existence of strongly correlated electron states in the presence of a magnetic field. In addition, at low carrier density graphene becomes an insulator with an energy gap tunable by magnetic field. These newly discovered quantum states offer the opportunity to study a new state of matter of strongly correlated Dirac fermions in the presence of large magnetic fields.
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