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Electron Localization at Metal Surfaces

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 Added by Raffaele Resta
 Publication date 2000
  fields Physics
and research's language is English




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We investigate some surfaces of a paradigmatic sp bonded metal--namely, Al(110), Al(100), and Al(111)--by means of the electron localization function (ELF), implemented in a first-principle pseudopotential framework. ELF is a ground-state property which discriminates in a very sharp, quantitative, way between different kinds of bonding. ELF shows that in the bulk of Al the electron distribution is essentially jelliumlike, while what happens at the surface strongly depends on packing. At the least packed surface, Al(110), ELF indicates a free-atom nature of the electron distribution in the outer region. The most packed surface, Al(111), is instead at the opposite end, and can be regarded as a jellium surface weakly perturbed by the presence of the ionic cores.



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We present a detailed study of the coupling-constant-averaged exchange-correlation hole density at a jellium surface, which we obtain in the random-phase approximation (RPA) of many-body theory. We report contour plots of the exchange-only and exchange-correlation hole densities, the integration of the exchange-correlation hole density over the surface plane, the on-top correlation hole, and the energy density. We find that the on-top correlation hole is accurately described by local and semilocal density-functional approximations. We also find that for electrons that are localized far outside the surface the main part of the corresponding exchange-correlation hole is localized at the image plane.
A method is presented for calculating electron-hole pair excitation due to an incident atom or molecule interacting with a metal surface. Energy loss is described using an textit{ab initio} approach that obtains a position-dependent friction coefficient for an adsorbate moving near a metal surface from a total energy pseudopotential calculation. A semi-classical forced oscillator model is constructed, using the same friction coefficient description of the energy loss, to describe excitation of the electron gas due to the incident molecule. This approach is applied to H and D atoms incident on a Cu(111) surface, and we obtain theoretical estimates of the `chemicurrents measured by Nienhaus et al [Phys. Rev. Lett. textbf{82}, 446 (1999)] for these atoms incident on the surface of a Schottky diode.
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166 - Norina A. Richter 2013
We investigate effects of doping on formation energy and concentration of oxygen vacancies at a metal oxide surface, using MgO (100) as an example. Our approach employs density-functional theory, where the performance of the exchange-correlation functional is carefully analyzed, and the functional is chosen according to a fundamental condition on DFT ionization energies. The approach is further validated by CCSD(T) calculations for embedded clusters. We demonstrate that the concentration of oxygen vacancies at a doped oxide surface is largely determined by formation of a macroscopically extended space charge region.
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