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Register a new userA constant of motion for ideal grain growth in three dimensions
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Most metallic and ceramic materials are comprised of a space-filling collection of crystalline grains separated by grain boundaries. While this grain structure has been studied for more than a century, there few rigorous results regarding its global properties available in the literature. We present a new, rigorous result for three-dimensional grain structures that relates the integral of the Gaussian curvature over the grain boundaries to the numbers of grains and quadruple junctions. The result is numerically verified for a grain structure consisting of periodic truncated octahedra.
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We demonstrate a facile method to produce crystallographically textured, macroporous materials using a combination of modified ice templating and templated grain growth (TGG). The process is demonstrated on alumina and the lead-free piezoelectric material sodium potassium niobate. The method provides macroporous materials with aligned, lamellar ceramic walls which are made up of crystallographically aligned grains. Each method showed that the ceramic walls present a long-range order over the entire sample dimensions and have crystallographic texture as a result of the TGG process. We also present a modification of the March-Dollase equation to better characterize the overall texture of materials with textured but slightly misaligned walls. The controlled crystallographic and morphologic orientation at two different length scales demonstrated here can be the basis of multifunctional materials.
Volume shrinkage, grain growth, and their interaction are major events occurring during free sintering of ceramics. A high temperature sintering dilatometry curve is influenced by these both phenomena. It is shown that the continuum theory of sintering can be utilized in the format enabling the extraction of the maximum amount of information on the densification and grain growth kinetics based on a simple dilatometry test. We present here the capability of such a fast approach (Dilatometry based Grain growth Assessment DGA) utilized for the modeling of sintering and grain growth of zirconia.
Materials with triply-degenerate nodal points in their low-energy electronic spectrum produce crystalline-symmetry-enforced three-fold fermions, which conceptually lie between the two-fold Weyl and four-fold Dirac fermions. Here we show how a silver-based Dirac semimetal BaAgAs realizes three-fold fermions through our first-principles calculations combined with a low-energy effective $mathbf{k.p}$ model Hamiltonian analysis. BaAgAs is shown to harbor triply-degenerate nodal points, which lie on its $C_{3}$ rotation axis, and are protected by the $C_{6v}$($C_2otimes C_{3v}$) point-group symmetry in the absence of spin-orbit coupling (SOC) effects. When the SOC is turned on, BaAgAs transitions into a nearly-ideal Dirac semimetal state with a pair of Dirac nodes lying on the $C_{3}$ rotation axis. We show that breaking inversion symmetry in the BaAgAs$_{1-x}$P$_x$ alloy yields a clean and tunable three-fold fermion semimetal. Systematic relaxation of other symmetries in BaAgAs generates a series of other topological phases. BaAgAs materials thus provide an ideal platform for exploring tunable topological properties associated with a variety of different fermionic excitations.
Grain boundary migration is driven by the boundarys curvature and external loads such as temperature and stress. In intercalation electrodes an additional driving force results from Li-diffusion. That is, Li-intercalation induces volume expansion of the host-electrode, which is stored as elastic energy in the system. This stored energy is hypothesized as an additional driving force for grain boundaries and edge dislocations. Here, we apply the 2D Cahn-Hilliard$-$phase-field-crystal (CH-PFC) model to investigate the coupled interactions between highly mobile Li-ions and host-electrode lattice structure, during an electrochemical cycle. We use a polycrystalline FePO$_{4}$/ LiFePO$_{4}$ electrode particle as a model system. We compute grain growth in the FePO$_{4}$ electrode in two parallel studies: In the first study, we electrochemically cycle the electrode and calculate Li-diffusion assisted grain growth. In the second study, we do not cycle the electrode and calculate the curvature-driven grain growth. External loads, such as temperature and stress, did not differ across studies. We find the mean grain-size increases by $sim11%$ in the electrochemically cycled electrode particle. By contrast, in the absence of electrochemical cycling, we find the mean grain-size increases by $sim2%$ in the electrode particle. These CH-PFC computations suggest that Li-intercalation accelerates grain-boundary migration in the host-electrode particle. The CH-PFC simulations provide atomistic insights on diffusion-induced grain-boundary migration, edge dislocation movement and triple-junction drag-effect in the host-electrode microstructure.
Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at high temperature using slow deposition in ultrahigh vacuum conditions. Here we describe a different approach: sputter deposition at modest temperatures followed by annealing to induce secondary grain growth. We show that polycrystalline as-deposited Cu on alpha-Al2O3(0001) can be transformed into Cu(111) with centimeter-sized grains. Employing optical microscopy, x-ray diffraction, and electron backscatter diffraction to characterize the films before and after annealing, we find a particular as-deposited grain structure that promotes the growth of giant grains upon annealing. To demonstrate one potential application of such films, we grow graphene by chemical vapor deposition on wafers of annealed Cu and obtain epitaxial graphene grains of 0.2 mm diameter.
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