No Arabic abstract
This paper presents an analytic model of one dimensional magnetostriction. We show how specific assumptions regarding the symmetry of key micromagnetic energies (magnetocrystalline, magnetoelastic, and Zeeman) reduce a general three-dimensional statistical mechanics model to a one-dimensional form with an exact solution. We additionally provide a useful form of the analytic equations to help ensure numerical accuracy. Numerical results show that the model maintains accuracy over a large range of applied magnetic fields and stress conditions extending well outside those produced in standard laboratory conditions. A comparison to experimental data is performed for several magnetostrictive materials. The model is shown to accurately predict the behavior of Terfenol-D, while two compositions of Galfenol are modeled with varying accuracy. To conclude we discuss what conditions facilitate the description of materials with cubic crystalline anisotropy as transversely isotropic, to achieve peak model performance.
A topology optimization method is presented for the design of periodic microstructured materials with prescribed homogenized nonlinear constitutive properties over finite strain ranges. The mechanical model assumes linear elastic isotropic materials, geometric nonlinearity at finite strain, and a quasi-static response. The optimization problem is solved by a nonlinear programming method and the sensitivities computed via the adjoint method. Two-dimensional structures identified using this optimization method are additively manufactured and their uniaxial tensile strain response compared with the numerically predicted behavior. The optimization approach herein enables the design and development of lattice-like materials with prescribed nonlinear effective properties, for use in myriad potential applications, ranging from stress wave and vibration mitigation to soft robotics.
With many fantastic properties, memristive devices have been proposed as top candidate for next-generation memory and neuromorphic computing chips. Significant research progresses have been made in improving performance of individual memristive devices and in demonstrating functional applications based on small-scale memristive crossbar arrays. However, practical deployment of large-scale traditional metal oxides based memristive crossbar array has been challenging due to several issues, such as high-power consumption, poor device reliability, low integration density and so on. To solve these issues, new materials that possess superior properties are required. Two-dimensional (2D) layered materials exhibit many unique physical properties and show great promise in solving these challenges, further providing new opportunities to implement practical applications in neuromorphic computing. Here, recent research progress on 2D layered materials based memristive device applications is reviewed. We provide an overview of the progresses and challenges on how 2D layered materials are used to solve the issues of conventional memristive devices and to realize more complex functionalities in neuromorphic computing. Besides, we also provide an outlook on exploitation of unique properties of 2D layered materials and van der Waals heterostructures for developing new types of memristive devices and artificial neural mircrocircuits.
This work studies the appearance of a Haldane gap in quasi one-dimensional antiferromagnets in the long wavelength limit, via the nonlinear $sigma$-model. The mapping from the three-dimensional, integer spin Heisenberg model to the nonlinear $sigma$-model is explained, taking into account two antiferromagnetic couplings: one along the chain axis ($J$) and one along the perpendicular planes ($J_bot$) of a cubic lattice. An implicit equation for the Haldane gap is derived, as a function of temperature and coupling ratio $J_bot/J$. Solutions to these equations show the existence of a critical coupling ratio beyond which a gap exists only above a transition temperature $T_N$. The cut-off dependence of these results is discussed.
We propose a stochastic particle model in (1+1)-dimensions, with one dimension corresponding to rapidity and the other one to the transverse size of a dipole in QCD, which mimics high-energy evolution and scattering in QCD in the presence of both saturation and particle-number fluctuations, and hence of Pomeron loops. The model evolves via non-linear particle splitting, with a non-local splitting rate which is constrained by boost-invariance and multiple scattering. The splitting rate saturates at high density, so like the gluon emission rate in the JIMWLK evolution. In the mean field approximation obtained by ignoring fluctuations, the model exhibits the hallmarks of the BK equation, namely a BFKL-like evolution at low density, the formation of a traveling wave, and geometric scaling. In the full evolution including fluctuations, the geometric scaling is washed out at high energy and replaced by diffusive scaling. It is likely that the model belongs to the universality class of the reaction-diffusion process. The analysis of the model sheds new light on the Pomeron loops equations in QCD and their possible improvements.
The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as contact resistance. With a systematic investigation, this work demonstrates a capacitive metal-insulator-semiconductor (MIS) field-effect at the electrical contacts to 2D materials: the field-effect depletes or accumulates charge carriers, redistributes the voltage potential, and give rise to abnormal current saturation and nonlinearity. On the one hand, the current saturation hinders the devices driving ability, which can be eliminated with carefully engineered contact configurations. On the other hand, by introducing the nonlinearity to monolithic analog artificial neural network circuits, the circuits perception ability can be significantly enhanced, as evidenced using a COVID-19 critical illness prediction model. This work provides a comprehension of the field-effect at the electrical contacts to 2D materials, which is fundamental to the design, simulation, and fabrication of electronics based on 2D material.