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Register a new userTwo-dimensional layered materials for memristive and neuromorphic applications
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With many fantastic properties, memristive devices have been proposed as top candidate for next-generation memory and neuromorphic computing chips. Significant research progresses have been made in improving performance of individual memristive devices and in demonstrating functional applications based on small-scale memristive crossbar arrays. However, practical deployment of large-scale traditional metal oxides based memristive crossbar array has been challenging due to several issues, such as high-power consumption, poor device reliability, low integration density and so on. To solve these issues, new materials that possess superior properties are required. Two-dimensional (2D) layered materials exhibit many unique physical properties and show great promise in solving these challenges, further providing new opportunities to implement practical applications in neuromorphic computing. Here, recent research progress on 2D layered materials based memristive device applications is reviewed. We provide an overview of the progresses and challenges on how 2D layered materials are used to solve the issues of conventional memristive devices and to realize more complex functionalities in neuromorphic computing. Besides, we also provide an outlook on exploitation of unique properties of 2D layered materials and van der Waals heterostructures for developing new types of memristive devices and artificial neural mircrocircuits.
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Synchronization of large spin Hall nano-oscillators (SHNO) arrays is an appealing approach toward ultra-fast non-conventional computing based on nanoscale coupled oscillator networks. However, for large arrays, interfacing to the network, tuning its individual oscillators, their coupling, and providing built-in memory units for training purposes, remain substantial challenges. Here, we address all these challenges using memristive gating of W/CoFeB/MgO/AlOx based SHNOs. In its high resistance state (HRS), the memristor modulates the perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface purely by the applied electric field. In its low resistance state (LRS), and depending on the voltage polarity, the memristor adds/subtracts current to/from the SHNO drive. The operation in both the HRS and LRS affects the SHNO auto-oscillation mode and frequency, which can be tuned up to 28 MHz/V. This tuning allows us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate two individually controlled memristors to tailor both the coupling strength and the frequency of the synchronized state. Memristor gating is therefore an efficient approach to input, tune, and store the state of the SHNO array for any non-conventional computing paradigm, all in one platform.
Light modulation is an essential operation in photonics and optoelectronics. With existing and emerging technologies increasingly demanding compact, efficient, fast and broadband optical modulators, high-performance light modulation solutions are becoming indispensable. The recent realization that two-dimensional layered materials could modulate light with superior performance has prompted intense research and significant advances, paving the way for realistic applications. In this review, we cover the state-of-the-art of optical modulators based on two-dimensional layered materials including graphene, transition metal dichalcogenides and black phosphorus. We discuss recent advances employing hybrid structures, such as two-dimensional heterostructures, plasmonic structures, and silicon/fibre integrated structures. We also take a look at future perspectives and discuss the potential of yet relatively unexplored mechanisms such as magneto-optic and acousto-optic modulation.
The scientific community has witnessed tremendous expansion of research on layered (i.e. two-dimensional, 2D) materials, with increasing recent focus on applications to photonics. Layered materials are particularly exciting for manipulating light in the confined geometry of photonic integrated circuits, where key material properties include strong and controllable light-matter interaction, and limited optical loss. Layered materials feature tunable optical properties, phases that are promising for electro-optics, and a panoply of polymorphs that suggest a rich design space for highly-nonperturbative photonic integrated devices based on phase-change functionality. All of these features are manifest in materials with band gap above the photonics-relevant near-infrared (NIR) spectral band ($sim$ 0.5 - 1 eV), meaning that they can be harnessed in refractive (i.e. non-absorptive) applications.
The growing library of two-dimensional layered materials is providing researchers with a wealth of opportunity to explore and tune physical phenomena at the nanoscale. Here, we review the experimental and theoretical state-of-art concerning the electron spin dynamics in graphene, silicene, phosphorene, transition metal dichalcogenides, covalent heterostructures of organic molecules and topological materials. The spin transport, chemical and defect induced magnetic moments, and the effect of spin-orbit coupling and spin relaxation, are also discussed in relation to the field of spintronics.
Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining superior properties of each component, such heterostructure also provides possible solutions to address various challenges of the electronic devices, especially those with vertical multilayered structures. Here, we report the realization of robust memristors for the first time based on van der Waals heterostructure of fully layered 2D materials (graphene/MoS2-xOx/graphene) and demonstrate a good thermal stability lacking in traditional memristors. Such devices have shown excellent switching performance with endurance up to 107 and a record-high operating temperature up to 340oC. By combining in situ high-resolution TEM and STEM studies, we have shown that the MoS2-xOx switching layer, together with the graphene electrodes and their atomically sharp interfaces, are responsible for the observed thermal stability at elevated temperatures. A well-defined conduction channel and a switching mechanism based on the migration of oxygen ions were also revealed. In addition, the fully layered 2D materials offer a good mechanical flexibility for flexible electronic applications, manifested by our experimental demonstration of a good endurance against over 1000 bending cycles. Our results showcase a general and encouraging pathway toward engineering desired device properties by using 2D van der Waals heterostructures.
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