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Register a new userProbing Metal-Molecule Contact at the Atomic Scale via Conductance Jump
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Understanding the formation of metal-molecule contact at the microscopic level is the key towards controlling and manipulating atomic scale devices. Employing two isomers of bipyridine, $4, 4^prime$ bipyridine and $2, 2^prime$ bipyridine between gold electrodes, here, we investigate the formation of metal-molecule bond by studying charge transport through single molecular junctions using a mechanically controlled break junction technique at room temperature. While both molecules form molecular junctions during the breaking process, closing traces show the formation of molecular junctions unambiguously for $4, 4^prime$ bipyridine via a conductance jump from the tunneling regime, referred as `jump to molecular contact, being absent for $2, 2^prime$ bipyridine. Through statistical analysis of the data, along with, molecular dynamics and first-principles calculations, we establish that contact formation is strongly connected with the molecular structure of the electrodes as well as how the junction is broken during breaking process, providing important insights for using a single-molecule in an electronic device.
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Conductance switching has been reported in many molecular junction devices, but in most cases has not been convincingly explained. We investigate conductance switching in Pt/stearic acid monolayer/Ti devices using pressure-modulated conductance microscopy. For devices with conductance G>>G_Q or G<<G_Q, where GQ=2e^2/h is the conductance quantum, pressure-induced conductance peaks <30 nm in diameter are observed, indicating the formation of nanoscale conducting pathways between the electrodes. For devices with G~ 1- 2 G_Q, in addition to conductance peaks we also observed conductance dips and oscillations in response to localized pressure. These results can be modeled by considering interfering electron waves along a quantum conductance channel between two partially transmitting electrode surfaces. Our findings underscore the possible use of these devices as atomic-scale switches.
Force and conductance were simultaneously measured during the formation of Cu-C60 and C60-C60 contacts using a combined cryogenic scanning tunneling and atomic force microscope. The contact geometry was controlled with submolecular resolution. The maximal attractive forces measured for the two types of junctions were found to differ significantly. We show that the previously reported values of the contact conductance correspond to the junction being under maximal tensile stress.
Recent advances in scanning probe techniques rely on the chemical functionalization of the probe-tip termination by a single molecule. The success of this approach opens the tantalizing prospect of introducing spin sensitivity through the functionalization by a magnetic molecule. Here, we use a nickelocene-terminated tip (Nc-tip), which offers the possibility of producing spin excitations on the tip apex of a scanning tunneling microscope (STM). We show that when the Nc-tip is a hundred pm away from point contact with a surface-supported object, magnetic effects may be probed through changes in the spin excitation spectrum of nickelocene. We use this detection scheme to simultaneously determine the exchange field and the spin polarization of the sample with atomic-scale resolution. Our findings demonstrate that the Nc-tip is a powerful probe for investigating surface magnetism with STM, from single magnetic atoms to surfaces.
The light emission from a scanning tunneling microscope operated on a Ag(111) surface at 6 K is analyzed from low conductances to values approaching the conductance quantum. Optical spectra recorded at a sample voltages V reveal emission with photon energies hv> 2eV. A model of electrons interacting coherently via a localized plasmon-polariton mode reproduces the experimental data, in particular the kinks in the spectra at eV and 2eV as well as the scaling of the intensity at low and intermediate conductances.
Interface phonon modes that are generated by several atomic layers at the heterointerface play a major role in the interface thermal conductance for nanoscale high-power devices such as nitride-based high-electron-mobility transistors and light emitting diodes. Here we measure the local phonon spectra across AlN/Si and AlN/Al interfaces using atomically resolved vibrational electron energy-loss spectroscopy in a scanning transmission electron microscope. At the AlN/Si interface, we observe various localized phonon modes, of which the extended and interfacial modes act as bridges to connect the bulk AlN modes and bulk Si modes, and are expected to boost the inelastic phonon transport thus substantially contribute to interface thermal conductance. In comparison, no such phonon bridge is observed at the AlN/Al interface, for which partially extended modes dominate the interface thermal conductivity. This work provides valuable insights into understanding the interfacial thermal transport in nitride semiconductors and useful guidance for thermal management via interface engineering.
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