Do you want to publish a course? Click here

Signature of half-metallicity in $text{BiFeO}_text{3}$

67   0   0.0 ( 0 )
 Added by Sanjoy Datta
 Publication date 2021
  fields Physics
and research's language is English




Ask ChatGPT about the research

$text{BiFeO}_text{3}$ has drawn a great attention over last several decades due to its promising multiferroic character. In the ground state the bulk $text{BiFeO}_text{3}$ is found to be in the rhombohedral phase. However, it has been possible to stabilize $text{BiFeO}_text{3}$ with tetragonal structure. The importance of tetragonal phase is due to its much larger value of the electric polarization and the possible stabilization of ferromagnetism as in the rhombohedral phase. Furthermore, the tetragonal structure of $text{BiFeO}_text{3}$ has been reported with different $c/a$ ratio, opening up the possibility of a much richer set of electronic phases. In this work, we have used density functional theory based first-principle method to study the ferromagnetic phase of the tetragonal $text{BiFeO}_text{3}$ structure as a function of the $c/a$ ratio. We have found that as the $c/a$ ratio decreases from $1.264$ to $1.016$, the tetragonal $text{BiFeO}_text{3}$ evolve from a ferromagnetic semiconductor to a ferromagnetic metal, while passing through a emph{half-metallic} phase. This evolution of the electronic properties becomes even more interesting when viewed with respect to the volume of each structure. The most stable half-metallic phase initially counter-intuitively evolve to the magnetic-semiconducting phase with a reduction in the volume, and after further reduction in the volume it finally becomes a metal. So far, this type of metal to insulator transition on compression was known to exist only in alkali metals, especially in Lithium, in heavy alkaline earth metals, and in some binary compound.



rate research

Read More

Epitaxial perovskite oxide interfaces with different symmetry of the epitaxial layers have attracted considerable attention due to the emergence of novel behaviors and phenomena. In this paper, we show by aberration corrected transmission electron microscopy that orthorhombic $text{LaInO}_text{3}$ films grow in form of three different types of domains on the cubic $text{BaSnO}_text{3}$ pseudosubstrate. Quantitative evaluation of our TEM data shows that $c_{pc}$-oriented and $a_{pc}/b_{pc}$-oriented domains are present with similar probability. While continuum elasticity theory suggests that $c_{pc}$-oriented domains should exhibit a significantly higher strain energy density than $a_{pc}/b_{pc}$-oriented domains, density functional calculations confirm that $c_{pc}$- and $a_{pc}$-oriented domains on $text{BaSnO}_text{3}$ have similar energies.
Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd$_text{1.85}$Ce$_text{0.15}$CuO$_text{4}$ and superconducting hole-doped La$_text{1.85}$Sr$_text{0.15}$CuO$_text{4}$ thin films, the latter being the top layer. On the ramp, a new growth mode of La$_text{1.85}$Sr$_text{0.15}$CuO$_text{4}$ with a 3.3 degree tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.
We report a first-principles electronic-structure calculation on C and BN hybrid zigzag nanoribbons. We find that half-metallicity can arise in the hybrid nanoribbons even though stand-alone C or BN nanoribbon possesses a finite band gap. This unexpected half-metallicity in the hybrid nanos-tructures stems from a competition between the charge and spin polarizations, as well as from the pi orbital hybridization between C and BN. Our results point out a possibility of making spintronic devices solely based on nanoribbons and a new way of designing metal-free half metals.
We report a comprehensive study of ultrafast carrier dynamics in single crystals of multiferroic BiFeO$_{3}$. Using femtosecond optical pump-probe spectroscopy, we find that the photoexcited electrons relax to the conduction band minimum through electron-phonon coupling with a $sim$1 picosecond time constant that does not significantly change across the antiferromagnetic transition. Photoexcited electrons subsequently leave the conduction band and primarily decay via radiative recombination, which is supported by photoluminescence measurements. We find that despite the coexisting ferroelectric and antiferromagnetic orders in BiFeO$_{3}$, the intrinsic nature of this charge-transfer insulator results in carrier relaxation similar to that observed in bulk semiconductors.
We calculate the shift current response, which has been identified as the dominant mechanism for the bulk photovoltaic effect, for the polar compounds LiAsS$_text{2}$, LiAsSe$_text{2}$, and NaAsSe$_text{2}$. We find that the magnitudes of the photovoltaic responses in the visible range for these compounds exceed the maximum response obtained for BiFeO$_text{3}$ by 10 - 20 times. We correlate the high shift current response with the existence of $p$ states at both the valence and conduction band edges, as well as the dispersion of these bands, while also showing that high polarization is not a requirement. With low experimental band gaps of less than 2 eV and high shift current response, these materials have potential for use as bulk photovoltaics.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا