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Register a new userThe role of the interface in controlling the epitaxial relationship between orthorhombic $text{LaInO}_text{3}$ and cubic $text{BaSnO}_text{3}$
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Epitaxial perovskite oxide interfaces with different symmetry of the epitaxial layers have attracted considerable attention due to the emergence of novel behaviors and phenomena. In this paper, we show by aberration corrected transmission electron microscopy that orthorhombic $text{LaInO}_text{3}$ films grow in form of three different types of domains on the cubic $text{BaSnO}_text{3}$ pseudosubstrate. Quantitative evaluation of our TEM data shows that $c_{pc}$-oriented and $a_{pc}/b_{pc}$-oriented domains are present with similar probability. While continuum elasticity theory suggests that $c_{pc}$-oriented domains should exhibit a significantly higher strain energy density than $a_{pc}/b_{pc}$-oriented domains, density functional calculations confirm that $c_{pc}$- and $a_{pc}$-oriented domains on $text{BaSnO}_text{3}$ have similar energies.
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$text{BiFeO}_text{3}$ has drawn a great attention over last several decades due to its promising multiferroic character. In the ground state the bulk $text{BiFeO}_text{3}$ is found to be in the rhombohedral phase. However, it has been possible to stabilize $text{BiFeO}_text{3}$ with tetragonal structure. The importance of tetragonal phase is due to its much larger value of the electric polarization and the possible stabilization of ferromagnetism as in the rhombohedral phase. Furthermore, the tetragonal structure of $text{BiFeO}_text{3}$ has been reported with different $c/a$ ratio, opening up the possibility of a much richer set of electronic phases. In this work, we have used density functional theory based first-principle method to study the ferromagnetic phase of the tetragonal $text{BiFeO}_text{3}$ structure as a function of the $c/a$ ratio. We have found that as the $c/a$ ratio decreases from $1.264$ to $1.016$, the tetragonal $text{BiFeO}_text{3}$ evolve from a ferromagnetic semiconductor to a ferromagnetic metal, while passing through a emph{half-metallic} phase. This evolution of the electronic properties becomes even more interesting when viewed with respect to the volume of each structure. The most stable half-metallic phase initially counter-intuitively evolve to the magnetic-semiconducting phase with a reduction in the volume, and after further reduction in the volume it finally becomes a metal. So far, this type of metal to insulator transition on compression was known to exist only in alkali metals, especially in Lithium, in heavy alkaline earth metals, and in some binary compound.
Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd$_text{1.85}$Ce$_text{0.15}$CuO$_text{4}$ and superconducting hole-doped La$_text{1.85}$Sr$_text{0.15}$CuO$_text{4}$ thin films, the latter being the top layer. On the ramp, a new growth mode of La$_text{1.85}$Sr$_text{0.15}$CuO$_text{4}$ with a 3.3 degree tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.
We calculate the shift current response, which has been identified as the dominant mechanism for the bulk photovoltaic effect, for the polar compounds LiAsS$_text{2}$, LiAsSe$_text{2}$, and NaAsSe$_text{2}$. We find that the magnitudes of the photovoltaic responses in the visible range for these compounds exceed the maximum response obtained for BiFeO$_text{3}$ by 10 - 20 times. We correlate the high shift current response with the existence of $p$ states at both the valence and conduction band edges, as well as the dispersion of these bands, while also showing that high polarization is not a requirement. With low experimental band gaps of less than 2 eV and high shift current response, these materials have potential for use as bulk photovoltaics.
The iron-based superconductor Ba$_{1-x}$K$_x$Fe$_text{2}$As$_text{2}$ is emerging as a key material for high magnetic field applications owing to the recent developments in superconducting wires and bulk permanent magnets. Epitaxial thin films play important roles in investigating and artificially tuning physical properties; nevertheless, the synthesis of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ epitaxial thin films remained challenging because of the high volatility of K. Herein, we report the successful growth of epitaxial Ba$_{1-x}$K$_x$Fe$_text{2}$As$_text{2}$ thin films by molecular-beam epitaxy with employing a combination of fluoride substrates (CaF$_text{2}$, SrF$_text{2}$, and BaF$_text{2}$) and a low growth temperature (350$-$420$^circ$C). Our epitaxial thin film grown on CaF$_text{2}$ showed sharp superconducting transition at an onset critical temperature of 36 K, slightly lower than bulk crystals by ~2 K due presumably to the strain effect arising from the lattice and thermal expansion mismatch. Critical current density ($J$$_text{c}$) determined by the magnetization hysteresis loop is as high as 2.2 MA/cm$^text{2}$ at 4 K under self-field. In-field $J$$_text{c}$ characteristics of the film are superior to the bulk crystals. The realization of epitaxial thin films opens opportunities for tuning superconducting properties by epitaxial strain and revealing intrinsic grain boundary transport of Ba$_{1-x}$K$_x$Fe$_text{2}$As$_text{2}$.
We report new results for the elastic constants studied in Faraday and Cotton-Mouton geometry in Tb$_3$Ga$_5$O$_{12}$ (TGG), a frustrated magnetic substance with strong spin-phonon interaction and remarkable crystal-electric-field (CEF) effects. We analyze the data in the framework of CEF theory taking into account the individual surroundings of the six inequivalent Tb$^{3+}$-ion positions. This theory describes both, elastic constants in the magnetic field and as a function of temperature. Moreover we present sound-attenuation data for the acoustic Cotton-Mouton effect in TGG.
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