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Register a new userHelicoid-arc van Hove singularities in topological chiral crystals
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Van Hove singularity are electronic instabilities that lead to many fascinating interactions, such as superconductivity and charge-density waves. And despite much interest, the nexus of emergent correlation effects from van Hove singularities and topological states of matter remains little explored in experiments. By utilizing synchrotron-based angle-resolved photoemission spectroscopy and Density Functional Theory, here we provide the first discovery of the helicoid quantum nature of topological Fermi arcs inducing van Hove singularities. In particular, in topological chiral conductors RhSi and CoSi we directly observed multiple types of inter- and intra-helicoid-arc mediated singularities, which includes the type-I and type-II van Hove singularity. We further demonstrate that the energy of the helicoid-arc singularities are easily tuned by chemical engineering. Taken together, our work provides a promising route to engineering new electronic instabilities in topological quantum materials.
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We investigate the electronic structure of the new family of kagome metals AV$_{3}$Sb$_{5}$ (A = K, Rb, Cs) using first-principles calculations. We analyze systematically the evolution of the van Hove singularities (vHss) across the entire family upon applied pressure and hole doping, specifically focusing on the two vHss closer to the Fermi energy. With pressure, these two saddle points shift away from the Fermi level. At the same time, the Fermi surface undergoes a large reconstruction with respect to the Sb bands while the V bands remain largely unchanged, pointing to the relevant role of the Sb atoms in the electronic structure of these materials. Upon hole doping, we find the opposite trend, where the saddle points move closer to the Fermi level for increasing dopings. All in all, we show how pressure and doping are indeed two mechanisms that can be used to tune the location of the two vHss closer to the Fermi level and can be exploited to tune different Fermi surface instabilities and associated orders.
Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBLG) presents a unique platform to study correlation phenomena, in which the Coulomb energy dominates over the quenched kinetic energy as a result of hybridized flat bands. Extending this approach to the case of twisted multilayer graphene would allow even higher control over the band structure because of the reduced symmetry of the system. Here, we study electronic transport properties in twisted trilayer graphene (tTLG, bilayer on top of monolayer graphene heterostructure). We observed the formation of van Hove singularities which are highly tunable by twist angle and displacement field and can cause strong correlation effects under optimum conditions, including superconducting states. We provide basic theoretical interpretation of the observed electronic structure.
The Hofstadter butterfly is a quantum fractal with a highly complex nested set of gaps, where each gap represents a quantum Hall state whose quantized conductivity is characterized by topological invariants known as the Chern numbers. Here we obtain simple rules to determine the Chern numbers at all scales in the butterfly fractal and lay out a very detailed topological map of the butterfly. Our study reveals the existence of a set of critical points, each corresponding to a macroscopic annihilation of orderly patterns of both the positive and the negative Cherns that appears as a fine structure in the butterfly. Such topological collapses are identified with the Van Hove singularities that exists at every band center in the butterfly landscape. We thus associate a topological character to the Van Hove anomalies. Finally, we show that this fine structure is amplified under perturbation, inducing quantum phase transitions to higher Chern states in the system.
Recent experiments have observed correlated insulating and possible superconducting phases in twisted homobilayer transition metal dichalcogenides (TMDs). Besides the spin-valley locked moire bands due to the intrinsic Ising spin-orbit coupling, homobilayer moire TMDs also possess either logarithmic or power-law divergent Van Hove singularities (VHS) near the Fermi surface, controllable by an external displacement field. The former and the latter are dubbed conventional and higher-order VHS, respectively. Here, we perform a perturbative renormalization group (RG) analysis to unbiasedly study the dominant instabilities in homobilayer TMDs for both the conventional and higher-order VHS cases. We find that the spin-valley locking largely alters the RG flows and leads to instabilities unexpected in the corresponding extensively-studied graphene-based moire systems, such as spin- and valley-polarized ferromagnetism and topological superconductivity with mixed parity. In particular, for the case with two higher-order VHS, we find a spin-valley-locking-driven metallic state with no symmetry breaking in the TMDs despite the diverging bare susceptibility. Our results show how the spin-valley locking significantly affects the RG analysis and demonstrate that moire TMDs are suitable platforms to realize various interaction-induced spin-valley locked phases, highlighting physics fundamentally different from the well-studied graphene-based moire systems.
The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. While the twist angle-dependence of these properties has been explored, direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines a functional twisted bilayer graphene device using in-operando angle-resolved photoemission with a nano-focused light spot. A twist angle of 12.2$^{circ}$ is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The doping dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and doping where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene.
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