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Register a new userRealization of A Non-Markov Chain in A Single 2D Crystal RRAM
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The non-Markov processes widely exist in thermodymanic processes, while it usually requires packing of many transistors and memories with great system complexity in traditional device architecture to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices show potential for next-generation computing systems with much-reduced complexity. Here, we achieve the non-Markov chain in an individual RRAM device based on 2D mica with a vertical metal/mica/metal structure. We find that the internal potassium ions (K+) in 2D mica gradually move along the direction of the applied electric field, making the initially insulating mica conductive. The accumulation of K+ is tuned by electrical field, and the 2D-mica RRAM possesses both unipolar and bipolar memory windows, high on/off ratio, decent stability and repeatability.Importantly, the non-Markov chain algorithm is established for the first time in a single RRAM, in which the movement of K+ is dependent on the stimulated voltage as well as their past states. This work not only uncovers the inner ionic conductivity of 2D mica, but also opens the door for such novel RRAM devices with numerous functions and applications.
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The interaction of Love waves with square array of pillars deposited on a cavity defined in a 2D holey phononic crystal is numerically investigated using Finite Element Method. First, the existence of SH surface modes is demonstrated separately for phononic crystals that consist of square arrayed holes, or rectangular arrayed Ni pillars, respectively in, or on, a SiO2 film deposited on a ST-cut quartz substrate. The coupling between SH modes and torsional mode in pillars induces a transmission dip that occurs at a frequency located in the range of the band-gap of the holey phononic crystal. Second, a cavity is constructed by removing lines of holes in the holey phononic crystal and results in a transmission peak that matches the dip. The optimal geometrical parameters enable us to create a coupling of the cavity mode and the localized pillar mode by introducing lines of pillars into the cavity, which significantly improved the efficiency of the cavity without increasing the crystal size. The obtained results will pave the way to implement advanced designs of high-performance electroacoustic sensors based on coupling modes in phononic crystals.
Single crystal, nanoscale diamond membranes are highly sought after for a variety of applications including nanophotonics, nanoelectronics and quantum information science. However, so far, the availability of conductive diamond membranes remained an unreachable goal. In this work we present a complete nanofabrication methodology for engineering high aspect ratio, electrically active single crystal diamond membranes. The membranes have large lateral directions, exceeding 500x500 um2 and are only several hundreds of nanometers thick. We further realize vertical single crystal p-n junctions, made from the diamond membranes that exhibit onset voltages of ~ 10V and a current of several mA. Moreover, we deterministically introduce optically active color centers into the membranes, and demonstrate for the first time a single crystal nanoscale diamond LED. The robust and scalable approach to engineer the electrically active single crystal diamond membranes, offers new pathways for advanced nanophotonics, nanoelectronics and optomechanics devices employing diamond.
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The field sweep rate (v=dH/dt) and temperature (T) dependence of the magnetization reversal of a single-chain magnet (SCM) is studied at low temperatures. As expected for a thermally activated process, the nucleation field (H_n) increases with decreasing T and increasing v. The set of H_n(T,v) data is analyzed with a model of thermally activated nucleation of magnetization reversal. Below 1 K, H_n becomes temperature independent but remains strongly sweep rate dependent. In this temperature range, the reversal of the magnetization is induced by a quantum nucleation of a domain wall that then propagates due to the applied field.
Strain engineering is one of the most effective approaches to manipulate the physical state of materials, control their electronic properties, and enable crucial functionalities. Because of their rich phase diagrams arising from competing ground states, quantum materials are an ideal playground for on-demand material control, and can be used to develop emergent technologies, such as adaptive electronics or neuromorphic computing. It was recently suggested that complex oxides could bring unprecedented functionalities to the field of nanomechanics, but the possibility of precisely controlling the stress state of materials is so far lacking. Here we demonstrate the wide and reversible manipulation of the stress state of single-crystal WO3 by strain engineering controlled by catalytic hydrogenation. Progressive incorporation of hydrogen in freestanding ultra-thin structures determines large variations of their mechanical resonance frequencies and induces static deformation. Our results demonstrate hydrogen doping as a new paradigm to reversibly manipulate the mechanical properties of nanodevices based on materials control.
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