No Arabic abstract
Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has been a common issue to properly quantify the spin-charge interconversion in these systems, being the case of Au paradigmatic. Here, we obtain a large spin-charge interconversion at a highly conducting Au/Cu interface which is experimentally shown to arise from the inverse spin galvanic effect of the interface and not from the spin Hall effect of bulk Au. We use two parameters independent of the microscopic details to properly quantify the spin-charge interconversion and the spin losses due to the interfacial spin-orbit coupling, providing an adequate benchmarking to compare with any spin-charge interconversion system. The good performance of this metallic interface, not based in Bi, opens the path to the use of much simpler light/heavy metal systems.
In bilayer systems consisting of an ultrathin ferromagnetic layer adjacent to a metal with strong spin-orbit coupling, an applied in-plane current induces torques on the magnetization. The torques that arise from spin-orbit coupling are of particular interest. Here, we calculate the current-induced torque in a Pt-Co bilayer to help determine the underlying mechanism using first principles methods. We focus exclusively on the analogue to the Rashba torque, and do not consider the spin Hall effect. The details of the torque depend strongly on the layer thicknesses and the interface structure, providing an explanation for the wide variation in results found by different groups. The torque depends on the magnetization direction in a way similar to that found for a simple Rashba model. Artificially turning off the exchange spin splitting and separately the spin-orbit coupling potential in the Pt shows that the primary source of the field-like torque is a proximate spin-orbit effect on the Co layer induced by the strong spin-orbit coupling in the Pt.
Charge transfer is of particular importance in manipulating the interface physics in transition-metal oxide heterostructures. In this work, we have fabricated epitaxial bilayers composed of polar 3d LaMnO3 and nonpolar 5d SrIrO3. Systematic magnetic measurements reveal an unexpectedly large exchange bias effect in the bilayer, together with a dramatic enhancement of the coercivity of LaMnO3. Based on first-principles calculations and x-ray absorption spectroscopy measurements, such a strong interfacial magnetic coupling is found closely associated with the polar nature of LaMnO3 and the strong spin-orbit interaction in SrIrO3, which collectively drives an asymmetric interfacial charge transfer and leads to the emergence of an interfacial spin glass state. Our study provides new insight into the charge transfer in transition-metal oxide heterostructures and offers a novel means to tune the interfacial exchange coupling for a variety of device applications.
We measure spin-orbit torques (SOTs) in a unique model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small field-like SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the ferrite/Pt interface. By contrast, we observe a sizable damping-like SOT that depends on the Pt thickness, from which we deduce the dominance of an extrinsic spin-Hall effect (skew scattering) and Dyakonov-Perel spin relaxation in the crystalline Pt film. Furthermore, our results point to a large internal spin-Hall ratio of $approx$0.8 in epitaxial Pt. Our experimental work takes an essential step towards understanding the mechanisms of charge-spin interconversion and SOTs in Pt-based heterostructures, which are crucial for power-efficient spintronic devices.
The existence of a spin-orbit coupling (SOC) induced by the gradient of the effective mass in low-dimensional heterostructures is revealed. In structurally asymmetric quasi-two-dimensional semiconductor heterostructures the presence of a mass gradient across the interfaces results in a SOC which competes with the SOC created by the electric field in the valence band. However, in graded quantum wells subjected to an external electric field, the mass-gradient induced SOC can be finite even when the electric field in the valence band vanishes.
When a local and attractive potential is quenched in a nanowire, the spectrum changes its topology from a purely continuum to a continuum and discrete portion. We show that, under appropriate conditions, this quench leads to stable coherent oscillations in the observables time evolution. In particular, we demonstrate that ballistic nanowires with spin-orbit coupling (SOC) exposed to a uniform magnetic field are especially suitable to observe this effect. Indeed, while in ordinary nanowires the effect occurs only if the strength $U_0$ of the attractive potential is sufficiently strong, even a weak value of $U_0$ is sufficient in SOC nanowires. Furthermore, in these systems coherent oscillations in the spin sector can be generated and controlled electrically by quenching the gate voltage acting on the charge sector. We interpret the origin of this phenomenon, analyze the effect of variation of the chemical potential and the switching time of the quenched attractive potential, and address possible implementation schemes.