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Register a new userTime- and Momentum-resolved Signatures of Edge States in a 2D Topological Insulator
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Two-dimensional quantum spin Hall (QSH) insulators are a promising material class for spintronic applications based on dissipationless topologically-protected spin currents in their edges. Yet, they have not lived up to their technological potential, as experimental realizations are scarce and limited to cryogenic temperatures. These constraints have also severely restricted the characterization of their dynamical properties, imperative for the design of QSH devices operating under nonequilibrium conditions. Here, we report on the electron dynamics of the novel room-temperature QSH candidate bismuthene after photoexcitation using time- and angle-resolved photoemission spectroscopy. We map the transiently occupied conduction band and observe a metallic dispersive feature within the bulk band gap - a signature of topological edge states. Our analysis of hot photocarrier lifetimes provides insight into the microscopic scattering processes and the key role of edge states. The demonstration of the large bulk band gap and stability of edge states at room temperature marks a critical step towards QSH applications.
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We use the bulk Hamiltonian for a three-dimensional topological insulator such as $rm Bi_2 Se_3$ to study the states which appear on its various surfaces and along the edge between two surfaces. We use both analytical methods based on the surface Hamiltonians (which are derived from the bulk Hamiltonian) and numerical methods based on a lattice discretization of the bulk Hamiltonian. We find that the application of a potential along an edge can give rise to states localized at that edge. These states have an unusual energy-momentum dispersion which can be controlled by applying a potential along the edge; in particular, the velocity of these states can be tuned to zero. The scattering across the edge is studied as a function of the edge potential. We show that a magnetic field in a particular direction can also give rise to zero energy states on certain edges. We point out possible experimental ways of looking for the various edge states.
We have performed angle-resolved photoemission spectroscopy on (PbSe)5(Bi2Se3)3m, which forms a natural multilayer heterostructure consisting of a topological insulator (TI) and an ordinary insulator. For m = 2, we observed a gapped Dirac-cone state within the bulk-band gap, suggesting that the topological interface states are effectively encapsulated by block layers; furthermore, it was found that the quantum confinement effect of the band dispersions of Bi2Se3 layers enhances the effective bulk-band gap to 0.5 eV, the largest ever observed in TIs. In addition, we found that the system is no longer in the topological phase at m = 1, pointing to a topological phase transition between m = 1 and 2. These results demonstrate that utilization of naturally-occurring heterostructures is a new promising strategy for realizing exotic quantum phenomena and device applications of TIs.
We present a microscopic theory of the chiral one-dimensional electron gas system localized on the sidewalls of magnetically-doped Bi$_2$Se$_3$-family topological insulator nanoribbons in the quantum anomalous Hall effect (QAHE) regime. Our theory is based on a simple continuum model of sidewall states whose parameters are extracted from detailed ribbon and film geometry tight-binding model calculations. In contrast to the familiar case of the quantum Hall effect in semiconductor quantum wells, the number of microscopic chiral channels depends simply and systematically on the ribbon thickness and on the position of the Fermi level within the surface state gap. We use our theory to interpret recent transport experiments that exhibit non-zero longitudinal resistance in samples with accurately quantized Hall conductances.
Helical edge states of two-dimensional topological insulators show a gap in the Density of States (DOS) and suppressed conductance in the presence of ordered magnetic impurities. Here we will consider the dynamical effects on the DOS and transmission when the magnetic impurities are driven periodically. Using the Floquet formalism and Greens functions, the system properties are studied as a function of the driving frequency and the potential energy contribution of the impurities. We see that increasing the potential part closes the DOS gap for all driving regimes. The transmission gap is also closed, showing an pronounced asymmetry as a function of energy. These features indicate that the dynamical transport properties could yield valuable information about the magnetic impurities.
The non-trivial topology of the three-dimensional (3D) topological insulator (TI) dictates the appearance of gapless Dirac surface states. Intriguingly, when a 3D TI is made into a nanowire, a gap opens at the Dirac point due to the quantum confinement, leading to a peculiar Dirac sub-band structure. This gap is useful for, e.g., future Majorana qubits based on TIs. Furthermore, these Dirac sub-bands can be manipulated by a magnetic flux and are an ideal platform for generating stable Majorana zero modes (MZMs), which play a key role in topological quantum computing. However, direct evidence for the Dirac sub-bands in TI nanowires has not been reported so far. Here we show that by growing very thin ($sim$40-nm diameter) nanowires of the bulk-insulating topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ and by tuning its chemical potential across the Dirac point with gating, one can unambiguously identify the Dirac sub-band structure. Specifically, the resistance measured on gate-tunable four-terminal devices was found to present non-equidistant peaks as a function of the gate voltage, which we theoretically show to be the unique signature of the quantum-confined Dirac surface states. These TI nanowires open the way to address the topological mesoscopic physics, and eventually the Majorana physics when proximitised by an $s$-wave superconductor.
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