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Register a new userDetecting light-induced Floquet band gaps of graphene via trARPES
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We propose a realistic regime to detect the light-induced topological band gap in graphene via time-resolved angle-resolved photoelectron spectroscopy (trARPES), that can be achieved with current technology. The direct observation of Floquet-Bloch bands in graphene is limited by low-mobility, Fourier-broadening, laser-assisted photoemission (LAPE), probe-pulse energy-resolution bounds, space-charge effects and more. We characterize a regime of low driving frequency and high amplitude of the circularly polarized light that induces an effective band gap at the Dirac point that exceeds the Floquet zone. This circumvents limitations due to energy resolutions and band broadening. The electron distribution across the Floquet replica in this limit allow for distinguishing LAPE replica from Floquet replica. We derive our results from a dissipative master equation approach that gives access to two-point correlation functions and the electron distribution relevant for trARPES measurements.
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We propose optical longitudinal conductivity as a realistic observable to detect light-induced Floquet band gaps in graphene. These gaps manifest as resonant features in the conductivity, when resolved with respect to the probing frequency and the driving field strength. We demonstrate these features via a dissipative master equation approach which gives access to a frequency- and momentum-resolved electron distribution. This distribution follows the light-induced Floquet-Bloch bands, resulting in a natural interpretation as occupations of these bands. Furthermore, we show that there are population
Electrons in two-dimensional hexagonal materials have valley degree of freedom, which can be used to encode and process quantum information. The valley-selective excitations, governed by the circularly polarised light resonant with the materials band-gap, continues to be the foundation of valleytronics. It is often assumed that achieving valley selective excitation in pristine graphene with all-optical means is not possible due to the inversion symmetry of the system. Here we demonstrate that both valley-selective excitation and valley-selective high-harmonic generation can be achieved in pristine graphene by using the combination of two counter-rotating circularly polarized fields, the fundamental and its second harmonic. Controlling the relative phase between the two colours allows us to select the valleys where the electron-hole pairs and higher-order harmonics are generated. We also describe an all-optical method for measuring valley polarization in graphene with a weak probe pulse. This work offers a robust recipe to write and read valley-selective electron excitations in materials with zero bandgap and zero Berry curvature.
We demonstrate how the properties of light-induced electronic Floquet states in solids impact natural physical observables, such as transport properties, by capturing the environmental influence on the electrons. We include the environment as dissipative processes, such as inter-band decay and dephasing, often ignored in Floquet predictions. These dissipative processes determine the Floquet band occupations of the emergent steady state, by balancing out the optical driving force. In order to benchmark and illustrate our framework for Floquet physics in a realistic solid, we consider the light-induced Hall conductivity in graphene recently reported by J.~W.~McIver, et al., Nature Physics (2020). We show that the Hall conductivity is estimated by the Berry flux of the occupied states of the light-induced Floquet bands, in addition to the kinetic contribution given by the average band velocity. Hence, Floquet theory provides an interpretation of this Hall conductivity as a geometric-dissipative effect. We demonstrate this mechanism within a master equation formalism, and obtain good quantitative agreement with the experimentally measured Hall conductivity, underscoring the validity of this approach which establishes a broadly applicable framework for the understanding of ultrafast non-equilibrium dynamics in solids.
Topological insulators (TIs) are an emerging class of materials that host highly robust in-gap surface/interface states while maintaining an insulating bulk. While most notable scientific advancements in this field have been focused on TIs and related topological crystalline insulators in 2D and 3D, more recent theoretical work has predicted the existence of 1D symmetry-protected topological phases in graphene nanoribbons (GNRs). The topological phase of these laterally-confined, semiconducting strips of graphene is determined by their width, edge shape, and the terminating unit cell, and is characterized by a Z2 invariant (similar to 1D solitonic systems). Interfaces between topologically distinct GNRs characterized by different Z2 are predicted to support half-filled in-gap localized electronic states which can, in principle, be utilized as a tool for material engineering. Here we present the rational design and experimental realization of a topologically-engineered GNR superlattice that hosts a 1D array of such states, thus generating otherwise inaccessible electronic structure. This strategy also enables new end states to be engineered directly into the termini of the 1D GNR superlattice. Atomically-precise topological GNR superlattices were synthesized from molecular precursors on a Au(111) surface under ultra-high vacuum (UHV) conditions and characterized by low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Our experimental results and first-principles calculations reveal that the frontier band structure of these GNR superlattices is defined purely by the coupling between adjacent topological interface states. This novel manifestation of 1D topological phases presents an entirely new route to band engineering in 1D materials based on precise control of their electronic topology, and is a promising platform for future studies of 1D quantum spin physics.
We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles calculations, we find that TDBG is semiconducting with a band gap that depends on the twist angle, that can be tuned by an external electric field. The gap is consistent with TDBG symmetry and its magnitude is related to surface effects, driving electron transfer from outer to inner layers. The surface effect competes with an energy upshift of localized states at inner layers, giving rise to the peculiar angle dependence of the band gap, which reduces at low angles. For these low twist angles, the TDBG develops flat bands, in which electrons in the inner layers are localized at the AA regions, as in twisted bilayer graphene.
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