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Register a new userAngle-dependent electron confinement in graphene moire superlattices
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In graphene moire superlattices, electronic interactions between layers are mostly hidden as band structures get crowded because of folding, making their interpretation cumbersome. Here, the evolution of the electronic band structure as a function of the interlayer rotation angle is studied using Density Functional Theory followed by unfolding bands and then comparing them to their corresponding individual components. We observe interactions at regions not theoretically elucidated so far, where for small interlayer angles, gaps turn into discrete-like states that are evenly spaced in energy. We find that $V_{ppsigma}$ attractive interactions between out-of-plane orbitals from different layers are responsible for the discretization. Furthermore, when the interlayer angle becomes small, these discrete evenly-spaced states have energy differences comparable to graphene phonons. Thus, they might be relevant to explain electron-phonon-assisted effects, which have been experimentally observed in graphene moire superlattices.
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The electronic structure of a crystalline solid is largely determined by its lattice structure. Recent advances in van der Waals solids, artificial crystals with controlled stacking of two-dimensional (2D) atomic films, have enabled the creation of materials with novel electronic structures. In particular, stacking graphene on hexagonal boron nitride (hBN) introduces moire superlattice that fundamentally modifies graphenes band structure and gives rise to secondary Dirac points (SDPs). Here we find that the formation of a moire superlattice in graphene on hBN yields new, unexpected consequences: a set of tertiary Dirac points (TDPs) emerge, which give rise to additional sets of Landau levels when the sample is subjected to an external magnetic field. Our observations hint at the formation of a hidden Kekule superstructure on top of the moire superlattice under appropriate carrier doping and magnetic fields.
In conventional light harvesting devices, the absorption of a single photon only excites one electron, which sets the standard limit of power-conversion efficiency, such as the Shockley-Queisser limit. In principle, generating and harnessing multiple carriers per absorbed photon can improve the efficiency and possibly overcome this limit. Here, we report the observation of multiple hot carrier collection in graphene-boron-nitride Moire superlattice structures. A record-high zero-bias photoresponsivity of 0.3 ampere per watt, equivalently, an external quantum efficiency exceeding 50 percent, is achieved utilizing graphene photo-Nernst effect, which demonstrates a collection of at least 5 carriers per absorbed photon. We reveal that this effect arises from the enhanced Nernst coefficient through Lifshtiz transition at low energy Van Hove singularities, which is an emergent phenomenon due to the formation of Moire minibands. Our observation points to a new means for extremely efficient and flexible optoelectronics based on van der Waals heterostructures.
Moire superlattices in van der Waals (vdW) heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. A lack of a simple way to characterize moire superlattices has impeded progress in the field. In this work we outline a simple, room-temperature, ambient method to visualize real-space moire superlattices with sub-5 nm spatial resolution in a variety of twisted vdW heterostructures including but not limited to conducting graphene, insulating boron nitride and semiconducting transition metal dichalcogenides. Our method utilizes piezoresponse force microscopy, an atomic force microscope modality which locally measures electromechanical surface deformation. We find that all moire superlattices, regardless of whether the constituent layers have inversion symmetry, exhibit a mechanical response to out-of-plane electric fields. This response is closely tied to flexoelectricity wherein electric polarization and electromechanical response is induced through strain gradients present within moire superlattices. Moire superlattices of 2D materials thus represent an interlinked network of polarized domain walls in a non-polar background matrix.
Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin polarization. Recent experiments have shown signatures of C = 2 valley Chern bands at 1/4 hole filling, in contrast to the predicted value of C = 3. We discuss the low-energy model for rhombohedral N-layer graphene (N = 1, 2, 3) aligned with hexagonal boron nitride (hBN) subject to off-diagonal moire vector potential terms that can alter the valley Chern numbers. Our analysis suggests that topological phase transitions of the flat bands can be triggered by pseudomagnetic vector field potentials associated to moire strain patterns, and that a nematic order with broken rotational symmetry can lead to valley Chern numbers that are in agreement with recent Hall conductivity observations.
We theoretically demonstrate that moire phonons at the lowest-energy bands can become chiral. A general symmetry analysis reveals that they originate from stacking configurations leading to an asymmetric interlayer binding energy that breaks the $C_{2z}$ symmetry on the moire length scale. Within elastic theory, we provide a complete classification of van der Waals heterostructures in respect to hosting moire chiral phonons and discuss their emergence in twisted bilayer MoS$_2$ as an example. The formation of the chiral phonons can be qualitatively understood using an effective model, which emphasizes their origin in the energy difference between stacking domains. Since moire chiral phonons are highly tunable, with excitation energies in only a few meV, and moire scale wavelengths, they might find potential applications in phononic twistronic devices.
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