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Register a new userPhase competition and negative piezoelectricity in interlayer-sliding ferroelectric ZrI$_2$
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The so-called interlayer-sliding ferroelectricity was recently proposed as an unconventional route to pursuit electric polarity in van der Waals multi-layers, which was already experimentally confirmed in WTe$_2$ bilayer even though it is metallic. Very recently, another van der Waals system, i.e., the ZrI$_2$ bilayer, was predicted to exhibit the interlayer-sliding ferroelectricity with both in-plane and out-of-plane polarizations [Phys. Rev. B textbf{103}, 165420 (2021)]. Here the ZrI$_2$ bulk is studied, which owns two competitive phases ($alpha$ textit{vs} $beta$), both of which are derived from the common parent $s$-phase. The $beta$-ZrI$_2$ owns a considerable out-of-plane polarization ($0.39$ $mu$C/cm$^2$), while its in-plane component is fully compensated. Their proximate energies provide the opportunity to tune the ground state phase by moderate hydrostatic pressure and uniaxial strain. Furthermore, the negative longitudinal piezoelectricity in $beta$-ZrI$_2$ is dominantly contributed by the enhanced dipole of ZrI$_2$ layers as a unique characteristic of interlayer-sliding ferroelectricity, which is different from many other layered ferroelectrics with negative longitudinal piezoelectricity like CuInP$_2$S$_6$.
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Vertical ferroelectricity where a net dipole moment appears as a result of in-plane ionic displacements has gained enormous attention following its discovery in transition metal dichalcogenides. Based on first-principles calculations, we report on the evidence of robust vertical ferroelectricity upon interlayer sliding in layered semiconducting $beta$-ZrI$_{2}$, a sister material of polar semimetals MoTe$_{2}$ and WTe$_{2}$. The microscopic origin of ferroelectricity in ZrI$_{2}$ is attributed to asymmetric shifts of electronic charges within a trilayer, revealing a subtle interplay of rigid sliding displacements and charge redistribution down to ultrathin thicknesses. We further investigate the variety of ferroelectric domain boundaries and predict a stable charged domain wall with a quasi-two-dimensional electron gas and a high built-in electric field that can increase electron mobility and electromechanical response in multifunctional devices. Semiconducting behaviour and a small switching barrier of ZrI$_{2}$ hold promise for novel ferroelectric applications, and our results provide important insights for further development of slidetronics ferroelectricity.
In this study, we investigate the underlying mechanisms of the negative piezoelectricity in low--dimensional materials by carrying out first--principles calculations. Two--dimensional ferroelectric CuInP$_2$S$_6$ is analyzed in detail as a typical example, but the theory can be applied to all other low--dimensional piezoelectrics. Similar to three--dimensional piezoelectrics with negative piezoelectric responses, the anomalous negative piezoelectricity in CuInP$_2$S$_6$ results from its negative clamped--ion term, which cannot be compensated by the positive internal strain part. Here, we propose a more general rule that having a negative clamped--ion term should be universal among piezoelectric materials, which is attributed to the lag of Wannier center effect. The internal--strain term, which is the change in polarization due to structural relaxation in response to strain, is mostly determined by the spatial structure and chemical bonding of the material. In a low--dimensional piezoelectric material as CuInP$_2$S$_6$, the internal--strain term is approximately zero. This is because the internal structure of the molecular layers, which are bonded by the weak van der Waals interaction, responds little to the strain. As a result, the magnitude of the dipole, which depends strongly on the dimension and structure of the molecular layer, also has a small response with respect to strain. An equation bridging the internal strain responses in low--dimensional and three--dimensional piezoelectrics is also derived to analytically express this point. This work aims to deepen our understanding about this anomalous piezoelectric effect, especially in low--dimensional materials, and provide strategies for discovering materials with novel electromechanical properties.
Interlayer excitons (IXs) possess a much longer lifetime than intralayer excitons due to the spatial separation of the electrons and holes; hence, they have been pursued to create exciton condensates for decades. The recent emergence of two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), and of their van der Waals heterostructures (HSs), in which two different 2D materials are layered together, has created new opportunities to study IXs. Here we present the observation of IX gases within two stacked structures consisting of hBN/WSe$_2$/hBN/p: WSe$_2$/hBN. The IX energy of the two different structures differed by 82 meV due to the different thickness of the hBN spacer layer between the TMD layers. We demonstrate that the lifetime of the IXs is shortened when the temperature and the pump power increase. We attribute this nonlinear behavior to an Auger process.
The control of electromechanical responses within bonding regions is essential to face frontier challenges in nanotechnologies, such as molecular electronics and biotechnology. Here, we present Ib{eta}-nanocellulose as a potentially new orthotropic 2D piezoelectric crystal. The predicted in-layer piezoelectricity is originated on a sui-generis hydrogen bonds pattern. Upon this fact and by using a combination of ab-initio and ad-hoc models, we introduce a description of electrical profiles along chemical bonds. Such developments lead to obtain a rationale for modelling the extended piezoelectric effect originated within bond scales. The order of magnitude estimated for the 2D Ib{eta}-nanocellulose piezoelectric response, ~pm V-1, ranks this material at the level of currently used piezoelectric energy generators and new artificial 2D designs. Such finding would be crucial for developing alternative materials to drive emerging nanotechnologies.
Since the first realization of reversible charge doping in graphene via field-effect devices, it has become evident how the induction a gap could further enhance its potential for technological applications. Here we show that the gap opening due to a sublattice symmetry breaking has also a profound impact on the polar response of graphene. By combining ab-initio calculations and analytical modelling we show that for realistic band-gap values ($Deltalesssim 0.5$ eV) the piezoelectric coefficient and the Born effective charge of graphene attain a giant value, independent on the gap. In particular the piezoelectric coefficient per layer of gapped mono- and bilayer graphene is three times larger than that of a large-gap full polar insulator as hexagonal Boron Nitride (h-BN) monolayer, and 30% larger than that of a polar semiconductor as MoS$_2$. This surprising result indicates that piezoelectric acoustic-phonons scattering can be relevant to model charge transport and charge-carrier relaxation in gated bilayer graphene. The independence of the piezoelectric coefficient and of the Born effective charge on the gap value follows from the connection between the polar response and the valley Chern number of gapped Dirac electrons, made possible by the effective gauge-field description of the electron-lattice/strain coupling in these systems. In the small gap limit, where the adiabatic ab-initio approximation fails, we implement analytically the calculation of the dynamical effective charge, and we establish a universal relation between the complex effective charge and the so-called Fano profile of the phonon optical peak. Our results provide a general theoretical framework to understand and compute the polar response in narrow-gap semiconductors, but may also be relevant for the contribution of piezoelectric scattering to the transport properties in Dirac-like systems.
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