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Register a new userAdd drop multiplexers for terahertz communications using two-wire waveguide based plasmonic circuits
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Added by
Maksim Skorobogatiy
Publication date
2021
fields
Physics
and research's language is
English
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Terahertz (THz) band is considered as the next frontier in wireless communications. The emerging THz multiplexing techniques are expected to dramatically increase the information capacity of THz communications far beyond a single channel limit. In this work, we explore the THz frequency-division multiplexing modality enabled by novel add-drop multiplexer (ADM) design. Based on modular two-wire plasmonic waveguides fabricated using additive manufacturing and metallization techniques, we demonstrate four-port THz ADMs containing grating-loaded side couplers for operation at ~140 GHz carrier frequency. Particular attention is payed to the design of plasmonic waveguide Bragg gratings and directional couplers capable of splitting broadband THz light in spectral and spatial domains, respectively. Finally, we demonstrate multiplexing and demultiplexing of THz signals with bit rates up to 6 Gbps using the developed ADMs. We believe that proposed plasmonic circuits hold strong potential to provide robust integrated solutions for analogue signal processing in the upcoming THz communications.
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We report a novel design of a compact wavelength add-drop multiplexer utilizing dielectric-loaded surface plasmon-polariton waveguides (DLSPPWs). The DLSPPW-based configuration exploits routing properties of directional couplers and filtering abilities of Bragg gratings. We present practical realization of a 20-$mu$m-long device operating at telecom wavelengths that can reroute optical signals separated by approximately 70 nm in the wavelength band. We characterize the performance of the fabricated structures using scanning near-field optical microscopy as well as leakage-radiation microscopy and support our findings with numerical simulations.
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the light absorption in graphene is enhanced while the metal absorption loss is reduced simultaneously, which helps greatly improve the responsivity as well as shorten the absorption region for achieving fast responses. Furthermore, metal-graphene-metal sandwiched electrodes are introduced to reduce the metal-graphene contact resistance, which is also helpful for improving the response speed. When the photodetector operates at 2 {mu}m, the measured 3dB-bandwidth is >20 GHz (which is limited by the experimental setup) while the 3dB-bandwith calculated from the equivalent circuit with the parameters extracted from the measured S11 is as high as ~100 GHz. To the best of our knowledge, it is the first time to report the waveguide photodetector at 2 {mu}m with a 3dB-bandwidth over 20 GHz. Besides, the present photodetectors also work very well at 1.55 {mu}m. The measured responsivity is about 0.4 A/W under a bias voltage of -0.3 V for an optical power of 0.16 mW, while the measured 3dB-bandwidth is over 40 GHz (limited by the test setup) and the 3 dB-bandwidth estimated from the equivalent circuit is also as high as ~100 GHz, which is one of the best results reported for silicon-graphene photodetectors at 1.55 {mu}m.
We experimentally demonstrate a broadband, fabrication tolerant, CMOS compatible compact silicon waveguide taper (34.2 um) in silicon-on-insulator wire waveguides. The taper works on multi-mode interference along the length of the taper. A single taper design has a broadband operation with coupling efficiency >70% over 700 nm that can be used in O, C and L-band. The compact taper is highly tolerant to fabrication variations; >100 nm change in the taper and end waveguide width varies the taper transmission by <5%. The footprint of the device i.e. taper along with the linear gratings is ~ 442 m2; i.e. 11.5X smaller than the adiabatic taper. The taper with linear gratings provides comparable coupling efficiency as standardly used focusing gratings. We have also compared the translational and rotational alignment tolerance of the focusing grating with the linear grating.
We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 120 GHz to 9.3 THz with different subranges corresponding to the transistors with different features sizes and tunable by the gate bias. The spectrometer uses a symmetrical FET with interchangeable source and drain with the rectified THz voltage between the source and drain being proportional to the sine of the phase shift between the voltages induced by the THz signal between gate-to-drain and gate-to-source. This phase difference could be created by using different antennas for the source-to-gate and drain-to gate contacts or by using a delay line introducing a phase shift or even by manipulating the impinging angle of the two antennas. The spectrometers are simulated using the multi-segment unified charge control model implemented in SPICE and ADS and accounting for the electron inertia effect and the distributed channel resistances, capacitances and Drude inductances.
A photonic integrated circuit (PIC) comprised of an 11 cm multimode speckle waveguide, a 1x32 splitter, and a linear grating coupler array is fabricated and utilized to receive 2 GHz of radio-frequency (RF) signal bandwidth from 2.5 to 4.5 GHz using compressive sensing (CS). Incoming RF signals are modulated onto chirped optical pulses which are input to the multimode waveguide. The multimode waveguide produces the random projections needed for CS via optical speckle. The time-varying phase and amplitude of two test RF signals between 2.5 and 4.5 GHz are successfully recovered using the standard penalized $l_1$-norm method. The use of a passive PIC serves as an initial step towards the miniaturization of a compressive sensing RF receiver.
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