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Register a new userFractional Chern insulators in magic-angle twisted bilayer graphene
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Fractional Chern insulators (FCIs) are lattice analogues of fractional quantum Hall states that may provide a new avenue toward manipulating non-abelian excitations. Early theoretical studies have predicted their existence in systems with energetically flat Chern bands and highlighted the critical role of a particular quantum band geometry. Thus far, however, FCI states have only been observed in Bernal-stacked bilayer graphene aligned with hexagonal boron nitride (BLG/hBN), in which a very large magnetic field is responsible for the existence of the Chern bands, precluding the realization of FCIs at zero field and limiting its potential for applications. By contrast, magic angle twisted bilayer graphene (MATBG) supports flat Chern bands at zero magnetic field, and therefore offers a promising route toward stabilizing zero-field FCIs. Here we report the observation of eight FCI states at low magnetic field in MATBG enabled by high-resolution local compressibility measurements. The first of these states emerge at 5 T, and their appearance is accompanied by the simultaneous disappearance of nearby topologically-trivial charge density wave states. Unlike the BLG/hBN platform, we demonstrate that the principal role of the weak magnetic field here is merely to redistribute the Berry curvature of the native Chern bands and thereby realize a quantum band geometry favorable for the emergence of FCIs. Our findings strongly suggest that FCIs may be realized at zero magnetic field and pave the way for the exploration and manipulation of anyonic excitations in moire systems with native flat Chern bands.
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Interactions among electrons and the topology of their energy bands can create novel quantum phases of matter. Most topological electronic phases appear in systems with weak electron-electron interactions. The instances where topological phases emerge only as a result of strong interactions are rare, and mostly limited to those realized in the presence of intense magnetic fields. The discovery of flat electronic bands with topological character in magic-angle twisted bilayer graphene (MATBG) has created a unique opportunity to search for new strongly correlated topological phases. Here we introduce a novel local spectroscopic technique using a scanning tunneling microscope (STM) to detect a sequence of topological insulators in MATBG with Chern numbers C = $pm$ 1, $pm$ 2, $pm$ 3, which form near $ u$ = $pm$ 3, $pm$ 2, $pm$ 1 electrons per moire unit cell respectively, and are stabilized by the application of modest magnetic fields. One of the phases detected here (C = +1) has been previously observed when the sublattice symmetry of MATBG was intentionally broken by hexagonal boron nitride (hBN) substrates, with interactions playing a secondary role. We demonstrate that strong electron-electron interactions alone can produce not only the previously observed phase, but also new and unexpected Chern insulating phases in MATBG. The full sequence of phases we observed can be understood by postulating that strong correlations favor breaking time-reversal symmetry to form Chern insulators that are stabilized by weak magnetic fields. Our findings illustrate that many-body correlations can create topological phases in moire systems beyond those anticipated from weakly interacting models.
The interplay between strong electron-electron interactions and band topology can lead to novel electronic states that spontaneously break symmetries. The discovery of flat bands in magic-angle twisted bilayer graphene (MATBG) with nontrivial topology has provided a unique platform in which to search for new symmetry-broken phases. Recent scanning tunneling microscopy and transport experiments have revealed a sequence of topological insulating phases in MATBG with Chern numbers $C=pm 3, , pm 2, , pm 1$ near moire band filling factors $ u = pm 1, , pm 2, , pm 3$, corresponding to a simple pattern of flavor-symmetry-breaking Chern insulators. Here, we report high-resolution local compressibility measurements of MATBG with a scanning single electron transistor that reveal a new sequence of incompressible states with unexpected Chern numbers observed down to zero magnetic field. We find that the Chern numbers for eight of the observed incompressible states are incompatible with the simple picture in which the $C= pm 1$ bands are sequentially filled. We show that the emergence of these unusual incompressible phases can be understood as a consequence of broken translation symmetry that doubles the moire unit cell and splits each $C=pm 1$ band into a $C=pm 1$ band and a $C=0$ band. Our findings significantly expand the known phase diagram of MATBG, and shed light onto the origin of the close competition between different correlated phases in the system.
Magic-angle twisted bilayer graphene (MA-TBG) exhibits intriguing quantum phase transitions triggered by enhanced electron-electron interactions when its flat-bands are partially filled. However, the phases themselves and their connection to the putative non-trivial topology of the flat bands are largely unexplored. Here we report transport measurements revealing a succession of doping-induced Lifshitz transitions that are accompanied by van Hove singularities (VHS) which facilitate the emergence of correlation-induced gaps and topologically non-trivial sub-bands. In the presence of a magnetic field, well quantized Hall plateaus at filling of 1, 2, 3 carriers per moire-cell reveal the sub-band topology and signal the emergence of Chern insulators with Chern-numbers, ! = !, !, !, respectively. Surprisingly, for magnetic fields exceeding 5T we observe a VHS at a filling of 3.5, suggesting the possibility of a fractional Chern insulator. This VHS is accompanied by a crossover from low-temperature metallic, to high-temperature insulating behavior, characteristic of entropically driven Pomeranchuk-like transitions,
Magic-angle twisted bilayer graphene (MATBG) exhibits a range of correlated phenomena that originate from strong electron-electron interactions. These interactions make the Fermi surface highly susceptible to reconstruction when $ pm 1, pm 2, pm 3$ electrons occupy each moir e unit cell and lead to the formation of correlated insulating, superconducting and ferromagnetic phases. While some phases have been shown to carry a non-zero Chern number, the local microscopic properties and topological character of many other phases remain elusive. Here we introduce a set of novel techniques hinging on scanning tunneling microscopy (STM) to map out topological phases in MATBG that emerge in finite magnetic field. By following the evolution of the local density of states (LDOS) at the Fermi level with electrostatic doping and magnetic field, we visualize a local Landau fan diagram that enables us to directly assign Chern numbers to all observed phases. We uncover the existence of six topological phases emanating from integer fillings in finite fields and whose origin relates to a cascade of symmetry-breaking transitions driven by correlations. The spatially resolved and electron-density-tuned LDOS maps further reveal that these topological phases can form only in a small range of twist angles around the magic-angle value. Both the microscopic origin and extreme sensitivity to twist angle differentiate these topological phases from the Landau levels observed near charge neutrality. Moreover, we observe that even the charge-neutrality Landau spectrum taken at low fields is considerably modified by interactions and exhibits an unexpected splitting between zero Landau levels that can be as large as ${sim },3-5$ meV. Our results show how strong electronic interactions affect the band structure of MATBG and lead to the formation of correlation-enabled topological phases.
The discovery of magic angle twisted bilayer graphene (MATBG) has unveiled a rich variety of superconducting, magnetic and topologically nontrivial phases. The existence of all these phases in one material, and their tunability, has opened new pathways for the creation of unusual gate tunable junctions. However, the required conditions for their creation - gate induced transitions between phases in zero magnetic field - have so far not been achieved. Here, we report on the first experimental demonstration of a device that is both a zero-field Chern insulator and a superconductor. The Chern insulator occurs near moire cell filling factor v = +1 in a hBN non-aligned MATBG device and manifests itself via an anomalous Hall effect. The insulator has Chern number C = +-1 and a relatively high Curie temperature of Tc = 4.5 K. Gate tuning away from this state exposes strong superconducting phases with critical temperatures of up to Tc = 3.5 K. In a perpendicular magnetic field above B > 0.5 T we observe a transition of the /C/= +1 Chern insulator from Chern number C = +-1 to C = 3, characterized by a quantized Hall plateau with Ryx = h/3e2. These observations show that interaction-induced symmetry breaking in MATBG leads to zero-field ground states that include almost degenerate and closely competing Chern insulators, and that states with larger Chern numbers couple most strongly to the B-field. By providing the first demonstration of a system that allows gate-induced transitions between magnetic and superconducting phases, our observations mark a major milestone in the creation of a new generation of quantum electronics.
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