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Register a new userHigh Aspect Ratio Transition Edge Sensors for X-ray Spectrometry
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We are developing large TES arrays in combination with FDM readout for the next generation of X-ray space observatories. For operation under AC-bias, the TESs have to be carefully designed and optimized. In particular, the use of high aspect ratio devices will help to mitigate non-ideal behaviour due to the weak-link effect. In this paper, we present a full characterization of a TES array containing five different device geometries, with aspect ratios (width:length) ranging from 1:2 up to 1:6. The complex impedance of all geometries is measured in different bias configurations to study the evolution of the small-signal limit superconducting transition parameters, as well as the excess noise. We show that high aspect ratio devices with properly tuned critical temperatures (around 90 mK) can achieve excellent energy resolution, with an array average of 2.03 +- 0.17 eV at 5.9 keV and a best achieved resolution of 1.63 +- 0.17 eV. This demonstrates that AC-biased TESs can achieve a very competitive performance compared to DC-biased TESs. The results have motivated a push to even more extreme device geometries currently in development.
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Transition Edge Sensors are ultra-sensitive superconducting detectors with applications in many areas of research, including astrophysics. The device consists of a superconducting thin film, often with additional normal metal features, held close to its transition temperature and connected to two superconducting leads of a higher transition temperature. There is currently no way to reliably assess the performance of a particular device geometry or material composition without making and testing the device. We have developed a proximity effect model based on the Usadel equations to predict the effects of device geometry and material composition on sensor performance. The model is successful in reproducing I-V curves for two devices currently under study. We use the model to suggest the optimal size and geometry for TESs, considering how small the devices can be made before their performance is compromised. In the future, device modelling prior to manufacture will reduce the need for time-consuming and expensive testing.
Transition Edge Sensors (TESs) are the selected technology for future spaceborne X-ray observatories, such as Athena, Lynx, and HUBS. These missions demand thousands of pixels to be operated simultaneously with high energy-resolving power. To reach these demanding requirements, every aspect of the TES design has to be optimized. Here we present the experimental results of tests on different devices where the coupling between the x-ray absorber and the TES sensor is varied. In particular, we look at the effects of the diameter of the coupling stems and the distance between the stems and the TES bilayer. Based on measurements of the AC complex impedance and noise, we observe a reduction in the excess noise as the spacing between the absorber stem and the bilayer is decreased. We identify the origin of this excess noise to be internal thermal fluctuation noise between the absorber stem and the bilayer. Additionally, we see an impact of the coupling on the superconducting transition in the appearance of kinks. Our observations show that these unwanted structures in the transition shape can be avoided with careful design of the coupling geometry. Also the stem diameter appears to have a significant impact on the smoothness of the TES transition. This observation is still poorly understood, but is of great importance for both AC and DC biased TESs.
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~mu{rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $lesssim 10~mu{rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{rm mm} times 13.8~{rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 times 384$ pixels with high uniformity.
X-ray calorimeters routinely achieve very high spectral resolution, typically a few eV full width at half maximum (FWHM). Measurements of calorimeter line shapes are usually dominated by the natural linewidth of most laboratory calibration sources. This compounds the data acquisition time necessary to statistically sample the instrumental line broadening, and can add systematic uncertainty if the intrinsic line shape of the source is not well known. To address these issues, we have built a simple, compact monochromatic x-ray source using channel cut crystals. A commercial x-ray tube illuminates a pair of channel cut crystals which are aligned in a dispersive configuration to select the kaone line of the x-ray tube anode material. The entire device, including x-ray tube, can be easily hand carried by one person and may be positioned manually or using a mechanical translation stage. The output monochromatic beam provides a collimated image of the anode spot with magnification of unity in the dispersion direction (typically 100-200 $mu$m for the x-ray tubes used here), and is unfocused in the cross-dispersion direction, so that the source image in the detector plane appears as a line. We measured output count rates as high as 10 count/s/pixel for the Hitomi Soft X-ray Spectrometer, which had 819 $mu$m square pixels. We implemented different monochromator designs for energies of 5.4 keV (one design) and 8.0 keV (two designs) which have effective theoretical FWHM energy resolution of 0.125, 0.197, and 0.086 eV, respectively; these are well-suited for optimal calibration measurements of state-of-the art x-ray calorimeters. We measured an upper limit for the energy resolution of our crkaone monochromator of 0.7 eV FWHM at 5.4 keV, consistent with the theoretical prediction of 0.125 eV.
X-ray SOI pixel sensors, XRPIX, are being developed for the next-generation X-ray astronomical satellite, FORCE. The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $pm$ 3%, yielding an energy resolution of 260.1 $pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.
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