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Shift-current response as a probe of quantum geometry and electron-electron interactions in twisted bilayer graphene

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 Added by Swati Chaudhary
 Publication date 2021
  fields Physics
and research's language is English




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Moire materials, and in particular twisted bilayer graphene (TBG), exhibit a range of fascinating phenomena, that emerge from the interplay of band topology and interactions. We show that the non-linear second-order photoresponse is an appealing probe of this rich interplay. A dominant part of the photoresponse is the shift-current, which is determined by the geometry of the electronic wavefunctions and carrier properties, and thus becomes strongly modified by electron-electron interactions. We analyze its dependence on the twist angle and doping, and investigate the role of interactions. In the absence of interactions, the response of the system is dictated by two energy scales: the mean energy of direct transitions between the hole and electron flat bands, and the gap between flat and dispersive bands. Including electron-electron interactions, both enhance the response at the non-interacting characteristic frequencies as well as produce new resonances. We attribute these changes to the filling-dependent band renormalization in TBG. Our results highlight the connection between non-trivial geometric properties of TBG and its optical response, as well as demonstrate how optical probes can access the role of interactions in moire materials.



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Layers of twisted bilayer graphene exhibit varieties of exotic quantum phenomena1-5. Today, the twist angle {Theta} has become an important degree of freedom for exploring novel states of matters, i.e. two-dimensional superconductivity ( {Theta} = 1.1{deg})6, 7 and a two-dimensional quasicrystal ({Theta} = 30{deg})8, 9. We report herein experimental observation on the photo-induced ultrafast dynamics of Dirac fermions in the quasicrystalline 30{deg} twisted bilayer graphene (QCTBG). We discover that hot carriers are asymmetrically distributed between the two graphene layers, followed by the opposing femtosecond relaxations, by using time- and angle-resolved photoemission spectroscopy. The key mechanism involves the differing carrier transport between layers and the transient doping from the substrate interface. The ultrafast dynamics scheme continues after the Umklapp scattering, which is induced by the incommensurate interlayer stacking of the quasi-crystallinity. The dynamics in the atomic layer opens the possibility of new applications and creates interdisciplinary links in the optoelectronics of van der Waals crystals.
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We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting zero-lines, we find that (i) the incoming current can be partitioned into both left-right adjacent topological channels and that (ii) the forward-propagating current is nonzero. By tuning the Fermi energy from the charge-neutrality point to a band edge, the currents partitioned into the three outgoing channels become nearly equal. Moreover, we find that current partition node can be designed as a perfect valley filter and energy splitter controlled by electric gating. By changing the relative electric field magnitude, the intersection of three topological zero-lines can transform smoothly into a single zero line, and the current partition can be controlled precisely. We explore the available methods for modulating this device systematically by changing the Fermi energy, the energy gap size, and the size of central gapless region. The current partition is also influenced by magnetic fields and the system size. Our results provide a microscopic depiction of the electronic transport properties around a unit cell of minimally twisted bilayer graphene and have far-reaching implications in the design of electron-beam splitters and interferometer devices.
We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number of charge carriers on two gate-defined quantum dot independently between zero and five. The high tunability of the device meets requirements to make such a device a suitable building block for spin-qubits. In the single electron regime, we determine interdot tunnel rates on the order of 2~GHz. Both, the interdot tunnel coupling, as well as the capacitive interdot coupling increase with dot occupation, leading to the transition to a single quantum dot. Finite bias magneto-spectroscopy measurements allow to resolve the excited state spectra of the first electrons in the double quantum dot; being in agreement with spin and valley conserving interdot tunneling processes.
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