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Register a new userValley-Current Splitter in Minimally Twisted Bilayer Graphene
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We study the electronic transport properties at the intersection of three topological zero-lines as the elementary current partition node that arises in minimally twisted bilayer graphene. Unlike the partition laws of two intersecting zero-lines, we find that (i) the incoming current can be partitioned into both left-right adjacent topological channels and that (ii) the forward-propagating current is nonzero. By tuning the Fermi energy from the charge-neutrality point to a band edge, the currents partitioned into the three outgoing channels become nearly equal. Moreover, we find that current partition node can be designed as a perfect valley filter and energy splitter controlled by electric gating. By changing the relative electric field magnitude, the intersection of three topological zero-lines can transform smoothly into a single zero line, and the current partition can be controlled precisely. We explore the available methods for modulating this device systematically by changing the Fermi energy, the energy gap size, and the size of central gapless region. The current partition is also influenced by magnetic fields and the system size. Our results provide a microscopic depiction of the electronic transport properties around a unit cell of minimally twisted bilayer graphene and have far-reaching implications in the design of electron-beam splitters and interferometer devices.
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We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K$) valley are transmitted only to e.g. the top (bottom) layer, leading to valley-layer locked currents. We show that such a valley splitter is obtained when the barrier varies slowly on the moire scale and induces a Lifshitz transition across the junction, i.e. a change in the Fermi surface topology. Furthermore, we show that for a given valley the reflected and transmitted current are transversely deflected, as time-reversal symmetry is effectively broken in each valley separately, resulting in valley-selective transverse focusing at zero magnetic field.
Twisted bilayer graphene (TBG) aligned with hexagonal boron nitride (h-BN) substrate can exhibit an anomalous Hall effect at 3/4 filling due to the spontaneous valley polarization in valley resolved moire bands with opposite Chern number [Science 367, 900 (2020), Science 365, 605 (2019)]. It was observed that a small DC current is able to switch the valley polarization and reverse the sign of the Hall conductance [Science 367, 900 (2020), Science 365, 605 (2019)]. Here, we discuss the mechanism of the current switching of valley polarization near the transition temperature, where bulk dissipative transport dominates. We show that for a sample with rotational symmetry breaking, a DC current may generate an electron density difference between the two valleys (valley density difference). The current induced valley density difference in turn induces a first order transition in the valley polarization. We emphasize that the inter-valley scattering plays a central role since it is the channel for exchanging electrons between the two valleys. We further estimate the valley density difference in the TBG/h-BN system with a microscopic model, and find a significant enhancement of the effect in the magic angle regime.
We investigate transport in the network of valley Hall states that emerges in minimally twisted bilayer graphene under interlayer bias. To this aim, we construct a scattering theory that captures the network physics. In the absence of forward scattering, symmetries constrain the network model to a single parameter that interpolates between one-dimensional chiral zigzag modes and pseudo-Landau levels. Moreover, we show how the coupling of zigzag modes affects magnetotransport. In particular, we find that scattering between parallel zigzag channels gives rise to Aharonov-Bohm oscillations that are robust against temperature, while coupling between zigzag modes propagating in different directions leads to Shubnikov-de Haas oscillations that are smeared out at finite temperature.
In minimally twisted bilayer graphene, a moir{e} pattern consisting of AB and BA stacking regions separated by domain walls forms. These domain walls are predicted to support counterpropogating topologically protected helical (TPH) edge states when the AB and BA regions are gapped. We fabricate designer moir{e} crystals with wavelengths longer than 50 nm and demonstrate the emergence of TPH states on the domain wall network by scanning tunneling spectroscopy measurements. We observe a double-line profile of the TPH states on the domain walls, only occurring when the AB and BA regions are gapped. Our results demonstrate a practical and flexible method for TPH state network construction.
Quasi-periodic moir{e} patterns and their effect on electronic properties of twisted bilayer graphene (TBG) have been intensely studied. At small twist angle $theta$, due to atomic reconstruction, the moire superlattice morphs into a network of narrow domain walls separating micron-scale AB and BA stacking regions. We use scanning probe photocurrent imaging to resolve nanoscale variations of the Seebeck coefficient occurring at these domain walls. The observed features become enhanced in a range of mid-infrared frequencies where the hexagonal boron nitride (hBN), which we use as a TBG substrate, is optically hyperbolic. Our results illustrate new capabilities of nano-photocurrent technique for probing nanoscale electronic inhomogeneities in two-dimensional materials.
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