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Register a new userPerspective: Phonon polaritons for infrared optoelectronics
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In recent years there has been significant fundamental research into phonon polaritons, owing to their ability to compress light to extremely small dimensions, low-losses, and ability to support anisotropic propagation. In this perspective, after briefly reviewing the present state of mid-infrared optoelectronics, we will assess the potential of phonon-polariton based nanophotonics for infrared (3-100$mathrm{mu}$m) light sources, detectors and modulators. These will operate in the Reststrahlen region where conventional semiconductor light sources become ineffective. Drawing on the results from the past few years, we will sketch some promising paths to create such devices and we will evaluate their practical advantages and disadvantages when compared to other approaches to infrared optoelectronics.
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Phonon polaritons (PhPs), the collective phonon oscillations with hybridized electromagnetic fields, concentrate optical fields in the mid-infrared frequency range that matches the vibrational modes of molecules. The utilization of PhPs holds the promise for chemical sensing tools and polariton-enhanced nanospectroscopy. However, investigations and innovations on PhPs in the aqueous phase remains stagnant, because of the lack of in situ mid-infrared nano-imaging methods in water. Strong infrared absorption from water prohibits optical delivery and detection in the mid-infrared for scattering-type near-field microscopy. Here, we present our solution: the detection of photothermal responses caused by the excitation of PhPs by liquid phase peak force infrared (LiPFIR) microscopy. Characteristic interference fringes of PhPs in 10B isotope-enriched h-BN were measured in the aqueous phase and their dispersion relationship extracted. LiPFIR enables the measurement of mid-infrared PhPs in the fluid phase, opening possibilities, and facilitating the development of mid-IR phonon polaritonics in water.
We propose a new type of reflective polarizer based on polarization-dependent coupling to surface-plasmon polaritons (SPPs) from free space. This inexpensive polarizer is relatively narrowband but features an extinction ratio of up to 1000 with efficiency of up to 95% for the desired polarization (numbers from a calculation), and thus can be stacked to achieve extinction ratios of 106 or more. As a proof of concept, we experimentally realized a polarizer based on nanoporous aluminum oxide that operates around a wavelength of 10.6 um, corresponding to the output of a CO2 laser, using aluminum anodization, a low-cost electrochemical process.
A true monolithic infrared photonics platform is within the reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. However, this Si-compatible family of group-IV semiconductors is typically strained and inherently metastable, making the epitaxial growth fraught with extended defects and compositional gradients. Herein, we controlled the growth kinetics to achieve epitaxial Si0.06Ge0.90Sn0.04 layers lattice-matched to a Ge on Si substrate, with a uniform content and a thickness up to 1.5 {mu}m. Atomic-level studies demonstrated high crystalline quality and uniform composition and confirmed the absence of short-range ordering and clusters. Moreover, these layers exhibit n-type conductivity that is in striking difference to the commonly observed p-type behavior in GeSn and SiGeSn alloys. Room temperature spectroscopic ellipsometry and transmission measurements showed the enhanced direct bandgap absorption at 0.83 eV and a reduced indirect bandgap absorption at lower energies. Si0.06Ge0.90Sn0.04 photoconductive devices exhibit a dark current similar to that of Ge devices and a slightly higher room-temperature spectral responsivity reaching 1 A/W above 0.82 eV (i.e. below 1.5 {mu}m wavelengths). These results underline the enhanced performance in lattice-matched devices and pave the way to introduce SiGeSn semiconductors as building blocks to implement the long-sought-after silicon-integrated infrared optoelectronics.
Polar van der Waals (vdW) crystals that support phonon polaritons have recently attracted much attention because they can confine infrared and terahertz (THz) light to deeply subwavelength dimensions, allowing for the guiding and manipulation of light at the nanoscale. The practical applications of these crystals in devices rely strongly on deterministic engineering of their spatially localized electromagnetic field distributions, which has remained challenging. This study demonstrates that polariton interference can be enhanced and tailored by patterning the vdW crystal {alpha}-MoO3 into microstructures that support highly in-plane anisotropic phonon polaritons. The orientation of the polaritonic in-plane isofrequency curve relative to the microstructure edges is a critical parameter governing the polariton interference, rendering the configuration of infrared electromagnetic field localizations by enabling the tuning of the microstructure size and shape and the excitation frequency. Thus, our study presents an effective rationale for engineering infrared light flow in planar photonic devices.
Integrating and manipulating the nano-optoelectronic properties of Van der Waals heterostructures can enable unprecedented platforms for photodetection and sensing. The main challenge of infrared photodetectors is to funnel the light into a small nanoscale active area and efficiently convert it into an electrical signal. Here, we overcome all of those challenges in one device, by efficient coupling of a plasmonic antenna to hyperbolic phonon-polaritons in hexagonal-BN to highly concentrate mid-infrared light into a graphene pn-junction. We balance the interplay of the absorption, electrical and thermal conductivity of graphene via the device geometry. This novel approach yields remarkable device performance featuring room temperature high sensitivity (NEP of 82 pW-per-square-root-Hz) and fast rise time of 17 nanoseconds (setup-limited), among others, hence achieving a combination currently not present in the state-of-the-art graphene and commercial mid-infrared detectors. We also develop a multiphysics model that shows excellent quantitative agreement with our experimental results and reveals the different contributions to our photoresponse, thus paving the way for further improvement of these types of photodetectors even beyond mid-infrared range.
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