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Register a new userStrengthening and Weakening by Dislocations in Monolayer MoS2
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Dislocations govern the properties of any crystals. Yet, how dislocation of pentagonheptagon (5|7) in grain boundaries (GBs) affects the mechanical properties of two-dimensional MoS2 crystals remains poorly known. Using atomistic simulations and continuum disclination dipole model, we show that, depending on the tilt angle and 5|7 dislocation arrangement, MoS2 GB strength can be enhanced or reduced with tilt angle. For zigzag-tilt GBs primarily composed of Mo5|7+S5|7 dislocations, GB strength monotonically increases as the square of tilt angle. For armchair-tilt GBs with Mo5|7 or S5|7 dislocations, however, the trend of GB strength breaks down as 5|7 dislocations are non-evenly spaced. Moreover, mechanical failure initiates at the bond shared by 5|7 rings, in contrast to graphene where failure occurs at the bond shared by 6|7 rings. This work provides new insights into mechanical design of synthetic transition metal dichalcogenide crystals via dislocation engineering.
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The coupled nonequilibrium dynamics of electrons and phonons in monolayer MoS2 is investigated by combining first-principles calculations of the electron-phonon and phonon-phonon interaction with the time-dependent Boltzmann equation. Strict phase-space constraints in the electron-phonon scattering are found to influence profoundly the decay path of excited electrons and holes, restricting the emission of phonons to crystal momenta close to few high-symmetry points in the Brillouin zone. As a result of momentum selectivity in the phonon emission, the nonequilibrium lattice dynamics is characterized by the emergence of a highly-anisotropic population of phonons in reciprocal space, which persists for up to 10 ps until thermal equilibrium is restored by phonon-phonon scattering. Achieving control of the nonequilibrium dynamics of the lattice may provide unexplored opportunities to selectively enhance the phonon population of two-dimensional crystals and, thereby, transiently tailor electron-phonon interactions over sub-picosecond time scales.
The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS$_2$ flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.
We show that the lack of inversion symmetry in monolayer MoS2 allows strong optical second harmonic generation. Second harmonic of an 810-nm pulse is generated in a mechanically exfoliated monolayer, with a nonlinear susceptibility on the order of 1E-7 m/V. The susceptibility reduces by a factor of seven in trilayers, and by about two orders of magnitude in even layers. A proof-of-principle second harmonic microscopy measurement is performed on samples grown by chemical vapor deposition, which illustrates potential applications of this effect in fast and non-invasive detection of crystalline orientation, thickness uniformity, layer stacking, and single-crystal domain size of atomically thin films of MoS2 and similar materials.
Twisted light carries a well-defined orbital angular momentum (OAM) per photon. The quantum number l of its OAM can be arbitrarily set, making it an excellent light source to realize high-dimensional quantum entanglement and ultra-wide bandwidth optical communication structures. To develop solid-state optoelectronic systems compatible with such promising light sources, a timely challenging task is to efficiently and coherently transfer the optical OAM of light to certain solid-state optoelectronic materials. Among the state-of-the-art emergent materials, atomically thin monolayer transition metal dichalcogenide (ML-TMD), featured by ultra-strong light-matter interaction due to its reduced dimensionality, renders itself a potential material suitable for novel applications. In this study, we carried out photoluminescence (PL) spectroscopy studies of ML-MoS2 under photoexcitation of twisted light with well-defined quantized OAM. We mainly observed pronounced increases in the spectral peak energy for every increment of l of the incident twisted light. The observed non-linear l-dependence of the spectral blue shifts evidences the OAM transfer from the exciting twisted light to the valley excitons in ML-TMDs, which is well accounted for by our analysis and computational simulation. Even more excitingly, the twisted light excitation is shown to make excitonic transitions relative to the transferred OAM, enabling us to infer the exciton band dispersion from the measured spectral shifts. Consequently, the measured non-linear l-dependent spectral shifts revealed an unusual lightlike exciton band dispersion of valley excitons in ML-TMDs that is predicted by previous theoretical studies and evidenced for the first time via our experimental setup that utilizes the unique twisted light source.
Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution with the MoS2 thickness. Here, we identify specific vibrational and binding energy fingerprints of such strong interaction using Raman and X-ray photoelectron spectroscopy, which indicate substantial strain and charge-transfer in monolayer MoS2. Near-field tip-enhanced Raman spectroscopy reveals heterogeneity of the MoS2-Au interaction at the nanoscale, reflecting the spatial non-conformity between the two materials. Far-field micro-Raman spectroscopy shows that this interaction is strongly affected by the roughness and cleanliness of the underlying Au. Our results elucidate the nature of the strong MoS2-Au interaction and provide guidance for strain and charge doping engineering of MoS2.
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