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Register a new userPhotonic circuits for laser stabilization with ultra-low-loss and nonlinear resonators
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Laser-frequency stabilization with on-chip photonic integrated circuits will provide compact, low cost solutions to realize spectrally pure laser sources. Developing high-performance and scalable lasers is critical for applications including quantum photonics, precision navigation and timing, spectroscopy, and high-capacity fiber communications. We demonstrate a significant advance in compact, stabilized lasers to achieve a record low integral emission linewidth and precision carrier stabilization by combining integrated waveguide nonlinear Brillouin and ultra-low loss waveguide reference resonators. Using a pair of 56.4 Million quality factor (Q) Si$_3$N$_4$ waveguide ring-resonators, we reduce the free running Brillouin laser linewidth by over an order of magnitude to 330 Hz integral linewidth and stabilize the carrier to 6.5$times$10$^{-13}$ fractional frequency at 8 ms, reaching the cavity-intrinsic thermorefractive noise limit for frequencies down to 80 Hz. This work demonstrates the lowest linewidth and highest carrier stability achieved to date using planar, CMOS compatible photonic integrated resonators, to the best of our knowledge. These results pave the way to transfer stabilized laser technology from the tabletop to the chip-scale. This advance makes possible scaling the number of stabilized lasers and complexity of atomic and molecular experiments as well as reduced sensitivity to environmental disturbances and portable precision atomic, molecular and optical (AMO) solutions.
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Optical whispering-gallery microresonators are useful tools in microphotonics, and nonlinear optics at very low threshold powers. Here, we present details about the fabrication of ultra-high-Q whispering-gallery-mode resonators made by CO2-laser lathe machining of fused-quartz rods. The resonators can be fabricated in less than one minute and the obtained optical quality factors exceed Q = 10^9. Demonstrated resonator diameters are in the range between 170 {mu}m and 8 mm (free spectral ranges between 390 GHz and 8 GHz). Using these microresonators, a variety of optical nonlinearities are observed, including Raman scattering, Brillouin scattering and four-wave mixing.
Nonlinear photonics based on integrated circuits has enabled applications such as parametric amplifiers, soliton frequency combs, supercontinua, and non-reciprocal devices. Ultralow optical loss and the capability for dispersion engineering are essential, which necessitate the use of multi-mode waveguides. Despite that rich interaction among different spatial waveguide eigenmodes can give rise to novel nonlinear phenomena, spatial mode interaction is typically undesired as it increases optical loss, perturbs local dispersion profile, and impedes soliton formation. Adiabatic bends, such as Euler bends whose curvature varies linearly with their path length, have been favoured to suppress spatial mode interaction. Adiabatic bends can essentially connect any two waveguide segments with adiabatic mode conversion, thus efficiently avoid mode mixing due to mode mismatch. However, previous works lack quantitative measurement data and analysis to fairly evaluate the adiabaticity, and are not based on photonic integrated circuits with tight optical confinement and optical losses of few dB/m. Here, we adapt, optimize, and implement Euler bends to build compact racetrack microresonators based on ultralow-loss, multi-mode, silicon nitride photonic integrated circuits. The racetrack microresonators feature a small footprint of only 0.21 mm^2 for 19.8 GHz FSR. We quantitatively investigate the suppression of spatial mode interaction in the racetrack microresonators with Euler bends. We show that the optical loss rate (15.5 MHz) is preserved, on par with the mode interaction strength (25 MHz). This results in an unperturbed microresonator dispersion profile. We further demonstrate single soliton of 19.8 GHz repetition rate. The optimized Euler bends and racetrack microresonators can be key building blocks for integrated nonlinear photonic systems, programmable processors and photonic quantum computing.
We report on a calibration procedure that enhances the precision of an interferometer based frequency stabilization by several orders of magnitude. For this purpose the frequency deviations of the stabilization are measured precisely by means of a frequency comb. This allows to implement several calibration steps that compensate different systematic errors. The resulting frequency deviation is shown to be less than $5.7 $MHz (rms $1.6 $MHz) in the whole wavelength interval $750 - 795 $nm. Wide tuning of a stabilized laser at this exceptional precision is demonstrated.
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding.
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
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