No Arabic abstract
The fermionic self-energy on the surface of a topological insulator proximity coupled to ferro- and antiferromagnetic insulators is studied. An enhanced electron-magnon coupling is achieved by allowing the electrons on the surface of the topological insulator to have a different exchange coupling to the two sublattices of the antiferromagnet. Such a system is therefore seen as superior to a ferromagnetic interface for the realization of magnon-mediated superconductivity. The increased electron-magnon-coupling simultaneously increases the self-energy effects. A careful study of this has been lacking, and in this paper we show how the inverse quasiparticle lifetime and energy renormalization on the surface of the topological insulator can be kept low close to the Fermi level by using a magnetic insulator with a sufficient easy-axis anisotropy. We find that the antiferromagnetic case is most interesting both from a theoretical and an experimental standpoint due to the increased electron-magnon coupling, combined with a reduced need for easy-axis anisotropy compared to the ferromagnetic case. We also consider a set of material and instrumental parameters where these self-energies should be measurable in angle-resolved photoemission spectroscopy (ARPES) experiments, paving the way for a measurement of the interfacial exchange coupling strength.
We have utilized time-domain magneto-terahertz spectroscopy to investigate the low frequency optical response of topological insulator Cu$_{0.02}$Bi$_2$Se$_3$ and Bi$_2$Se$_3$ films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu$_{0.02}$Bi$_2$Se$_3$ induces a true bulk insulator with only a textit{single} type of conduction with total sheet carrier density $sim4.9times10^{12}/$cm$^{2}$ and mobility as high as 4000 cm$^{2}/$V$cdot$s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on top and bottom of the film with a chemical potential $sim$145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero field Drude conductance. In contrast, in normal Bi$_2$Se$_3$ films two conduction channels were observed and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk/2DEG states. Our high-resolution Faraday rotation spectroscopy on Cu$_{0.02}$Bi$_2$Se$_3$ paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push chemical potential in the lowest Landau Level.
The protected surface conductivity of topological insulators, carried by ultra-relativistic Dirac fermions, is in high demand for the next generation of electronic devices. Progress in the unambiguous identification of this surface contribution and, in a second step, its control are needed to move forward. Here we demonstrate both, with a combined transport and spectroscopy study of high-quality single crystals and mesoscopic devices of the topological insulator TlBiSe2. We show how various external stimuli-from thermal radiation, via low-intensity light, to high-intensity laser pumping and current driving-can boost the surface contribution, thereby making it both unambiguously detectable and potentially exploitable for applications. Once switched on, the extra surface contribution is persistent, with lifetimes of hundreds of years at low temperatures. We understand this effect in terms of the well-known concept of surface charge accumulation via a Schottky barrier formation, and propose that the same mechanism underlies also the slow relaxations seen with spectroscopic probes in our and other materials, which might thus also be persistent. We expect our technique to be readily transferable to other materials and probes, thereby shedding light on unexplained slow relaxations in transport and beyond.
Compensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in-situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation.
A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it has been challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb$_2$Te$_3$ films, we were able to reach an extreme quantum limit of the topological surface state and uncover a hidden phase at the zeroth Landau level. First, we discovered an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level. Then, through a detailed scaling analysis, we found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in non-topological systems.
We study the manipulation of the photoelectron spin-polarization in Bi$_2$Se$_3$ by spin- and angle-resolved photoemission spectroscopy. General rules are established that enable controlling the spin-polarization of photoemitted electrons via light polarization, sample orientation, and photon energy. We demonstrate the $pm$100% reversal of a single component of the measured spin-polarization vector upon the rotation of light polarization, as well as a full three-dimensional manipulation by varying experimental configuration and photon energy. While a material-specific density-functional theory analysis is needed for the quantitative description, a minimal two-atomic-layer model qualitatively accounts for the spin response based on the interplay of optical selection rules, photoelectron interference, and topological surface-state complex structure. It follows that photoelectron spin-polarization control is generically achievable in systems with a layer-dependent, entangled spin-orbital texture.