No Arabic abstract
Rapid proliferation of hyperspectral imaging in scanning probe microscopies creates unique opportunities to systematically capture and categorize higher dimensional datasets, toward new insights into electronic, mechanical and chemical properties of materials with nano- and atomic-scale resolution. Here we demonstrate similarity learning for tunneling spectroscopy acquired on superconducting material (FeSe) with sparse density of imperfections (Fe vacancies). Popular methods for unsupervised learning and discrete representation of the data in terms of clusters of characteristic behaviors were found to produce inconsistencies with respect to capturing the location and tunneling characteristics of the vacancy sites. To this end, we applied a more general, non-linear similarity learning. This approach was found to outperform several widely used methods for dimensionality reduction and produce a clear differentiation of the type of tunneling spectra. In particular, significant spectral weight transfer likely associated with the electronic reconstruction by the vacancy sites, is systematically captured, as is the spatial extent of the vacancy region. Given that a great variety of electronic materials will exhibit similarly smooth variation of the spectral responses due to random or engineered inhomogeneities in their structure, we believe our approach will be useful for systematic analysis of hyperspectral imaging with minimal prior knowledge, as well as prospective comparison of experimental measurements to theoretical calculations with explicit consideration of disorder.
A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below $sim$10%) were obtained using an artificial tunnel barrier of Al$_2$O$_3$ on the films surface grown $textit{ex situ}$ by ALD. We find a large critical current density on the order of $4times 10^6$A/cm$^2$ at $T=0.8T_c$ for a 60nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest the ALD technique offers significant promise for thin film superconducting device applications.
The local density of states power spectrum of optimally doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO) has been interpreted in terms of quasiparticle interference peaks corresponding to an octet of scattering wave vectors connecting k-points where the density of states is maximal. Until now, theoretical treatments have not been able to reproduce the experimentally observed weights and widths of these octet peaks; in particular, the predominance of the dispersing q$_1$ peak parallel to the Cu-O bond directions has remained a mystery. In addition, such theories predict background features which are not observed experimentally. Here, we show that most of the discrepancies can be resolved when a realistic model for the out-of-plane disorder in BSCCO is used. Weak extended potential scatterers, which are assumed to represent cation disorder, suppress large-momentum features and broaden the low-energy q$_7$-peaks, whereas scattering at order parameter variations, possibly caused by a dopant-modulated pair interaction around interstitial oxygens, strongly enhances the dispersing q$_1$-peaks.
We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunneling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap delta=2.3-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, delta=7.2 meV, consistent with a proposed two-band model.
The comprehensive research of the electronic structure, thermodynamic and electrical transport properties reveals the existence of inhomogeneous superconductivity due to structural disorder in Ca$_3$Rh$_4$Sn$_{13}$ doped with La (Ca$_{3-x}$La$_x$Rh$_4$Sn$_{13}$) or Ce (Ca$_{3-x}$Ce$_x$Rh$_4$Sn$_{13}$) with superconducting critical temperatures $T_c^{star}$ higher than those ($T_c$) observed in the parent compounds. The $T-x$ diagrams and the entropy $S(x)_T$ isotherms well document the relation between degree of an atomic disorder and separation of the {it high-temperature} $T_c^{star}$ and $T_c$-bulk phases. In these dirty superconductors with the mean free path much smaller than the coherence length, the Werthamer-Helfand-Hohenber theoretical model does not well fits the $H_{c2}(T)$ data. We suggest that this can result from two-band superconductivity or from the presence of strong inhomogeneity in these systems. The multiband model very well describes the $H-T$ dependencies, but the present results as well as our previous studies give arguments for the scenario based on the presence of nanoscopic inhomogeneity of the superconducting state. We also revisited the nature of structural phase transition at $T^{star}sim 130-170$ K and documented that there might be another precursor transition at higher temperatures. The impact of the magnetic Ce-Ce correlations on the increase of $T_c$ in respect to the critical temperatures of Ca$_{3-x}$La$_x$Rh$_4$Sn$_{13}$ is also discussed.
The interplay between disorder and superconductivity has intrigued physicists for decades. Of particular interest is the influence of disorder on the superconducting energy gap $Delta$. In the absence of Coulomb interactions between electrons, disorder leads to emergent granularity of the local order parameter resulting in a pseudogap at temperatures above the critical temperature $T_c$, as well as a finite gap $Delta$ on the insulating side of the disorder-driven superconductor-insulator transition (SIT). At the same time, disorder also enhances the Coulomb interactions, which subsequently may influence $Delta$ in a manner that is still not fully understood. Here we investigate the evolution of the energy gap through the SIT by two different experimental methods: tunneling spectroscopy, in which a metallic electrode is placed close to the studied sample thus screening the Coulomb interactions, and terahertz (THz) spectroscopy, which probes the unscreened sample. The comparison between the two methods illustrates the role played by electronic interactions in determining the nature of the phases across the SIT and sheds light on the mechanisms involved in the destruction of superconductivity.