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Register a new userStructure and magnetism in Fe-doped FeVSb and epitaxial Fe/FeVSb nanocomposite films
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The combination of ferromagnetism and semiconducting behavior offers an avenue for realizing novel spintronics and spin-enhanced thermoelectrics. Here we demonstrate the synthesis of doped and nanocomposite half Heusler Fe$_{1+x}$VSb films by molecular beam epitaxy. For dilute excess Fe ($x < 0.1$), we observe a decrease in the Hall electron concentration and no secondary phases in X-ray diffraction, consistent with Fe doping into FeVSb. Magnetotransport measurements suggest weak ferromagnetism that onsets at a temperature of $T_{c} approx$ 5K. For higher Fe content ($x > 0.1$), ferromagnetic Fe nanostructures precipitate from the semiconducting FeVSb matrix. The Fe/FeVSb interfaces are epitaxial, as observed by transmission electron microscopy and X-ray diffraction. Magnetotransport measurements suggest proximity-induced magnetism in the FeVSb, from the Fe/FeVSb interfaces, at an onset temperature of $T_{c} approx$ 20K.
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The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition $XYZ$ or $X_2 YZ$) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a textit{semi} adsorption-controlled growth window for semiconducting half Heusler FeVSb films, grown by molecular beam epitaxy (MBE). We show that due to the high volatility of Sb, the Sb stoichiometry is self-limiting for a finite range of growth temperatures and Sb fluxes, similar to the growth of III-V semiconductors such as GaSb and GaAs. Films grown within this window are nearly structurally indistinguishable by X-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). The highest electron mobility and lowest background carrier density are obtained towards the Sb-rich bound of the window, suggesting that Sb-vacancies may be a common defect. Similar textit{semi} adsorption-controlled bounds are expected for other ternary intermetallics that contain a volatile species $Z=${Sb, As, Bi}, e.g., CoTiSb, LuPtSb, GdPtBi, and NiMnSb. However, outstanding challenges remain in controlling the remaining Fe/V ($X/Y$) transition metal stoichiometry.
We have studied the electronic structure of Zn$_{0.9}$Fe$_{0.1}$O nano-particles, which have been reported to show ferromagnetism at room temperature, by x-ray photoemission spectroscopy (XPS), resonant photoemission spectroscopy (RPES), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the experimental and cluster-model calculation results, we find that Fe atoms are predominantly in the Fe$^{3+}$ ionic state with mixture of a small amount of Fe$^{2+}$ and that Fe$^{3+}$ ions are dominant in the surface region of the nano-particles. It is shown that the room temperature ferromagnetism in the Zn$_{0.9}$Fe$_{0.1}$O nano-particles is primarily originated from the antiferromagnetic coupling between unequal amounts of Fe$^{3+}$ ions occupying two sets of nonequivalent positions in the region of the XMCD probing depth of $sim$ 2-3 nm.
Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with filled shell configuration of 18 valence electrons per formula unit ($s^2 p^6 d^{10}$). Angle-resolved photoemission spectroscopy (ARPES) reveals a mass renormalization of $m^{*}/m_{bare}= 1.4$, where $m^{*}$ is the measured effective mass and $m_{bare}$ is the mass from density functional theory (DFT) calculations with no added on-site Coulomb repulsion. Our measurements are in quantitative agreement with dynamical mean field theory (DMFT) calculations, highlighting the many-body origin of the mass renormalization. This mass renormalization lies in dramatic contrast to other filled shell intermetallics, including the thermoelectric materials CoTiSb and NiTiSn; and has a similar origin to that in FeSi, where Hunds coupling induced fluctuations across the gap can explain a dynamical self-energy and correlations. Our work calls for a re-thinking of the role of correlations and Hunds coupling in intermetallic band insulators.
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign.
Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for non-magnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films helical magnetic ground state was confirmed using polarized neutron reflectometry measurements. The pitch of the spin helix, measured by this method, varies with Co content $y$ and diverges at $y sim 0.45$. This indicates a zero-crossing of the DMI, which we reproduced in calculations using first principle methods. We also measured the longitudinal and Hall resistivity of our films as a function of magnetic field, temperature, and Co content $y$. The Hall resistivity is expected to contain contributions from the ordinary, anomalous, and topological Hall effects. Both the anomalous and topological Hall resistivities show peaks around $y sim 0.5$. Our first principles calculations show a peak in the topological Hall constant at this value of $y$, related to the strong spin-polarisation predicted for intermediate values of $y$. Half-metallicity is predicted for $y = 0.6$, consistent with the experimentally observed linear magnetoresistance at this composition. Whilst it is possible to reconcile theory with experiment for the various Hall effects for FeGe, the large topological Hall resistivities for $y sim 0.5$ are much larger then expected when the very small emergent fields associated with the divergence in the DMI are taken into account.
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