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Register a new userOptical properties of biased bilayer graphene due to gap parameter effects
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We address the optical conductivity of undoped bilayer graphene in the presence of a finite bias voltage at finite temperature. The effects of gap parameter and stacking type on optical conductivity are discussed in the context of tight binding model Hamiltonian. Greens function approach has been implemented to find the behavior of optical conductivity of bilayer graphene within linear response theory. We have found the frequency dependence of optical conductivity for different values of gap parameter and bias voltage. Also the dependence of optical conductivity on the temperature has been investigated in details. A peak appears in the plot of optical conductivity versus frequency for different values of temperatures and bias voltage. Furthermore we find the frequency position of broad peak in optical conductivity goes to higher values with increase of gap parameter for both bernal and simple stacked bilayer graphenes.
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We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t$ (in-plane) and $gamma_{4}$ (inter-layer), and the on-site energy $Delta$.
Focusing on the twist angle for the minimal commensurate structure, we perform nonperturbative calculations of electron dynamics in the twisted bilayer graphene (TBG) under intense laser fields. We show that the TBG exhibits enriched high-harmonic generation that cannot occur in monolayer or conventional bilayers. We elucidate the mechanism of these nonlinear responses by analyzing dynamical symmetries, momentum-resolved dynamics, and roles of interlayer coupling. Our results imply nonlinear optotwistronics, or controlling optical properties of layered materials by artificial twists.
We study the zero-temperature many-body properties of twisted bilayer graphene with a twist angle equal to the so-called `first magic angle. The system low-energy single-electron spectrum consists of four (eight, if spin label is accounted) weakly-dispersing partially degenerate bands, each band accommodating one electron per Moir{{e}} cell per spin projection. This weak dispersion makes electrons particularly susceptible to the effects of interactions. Introducing several excitonic order parameters with spin-density-wave-like structure, we demonstrate that (i)~the band degeneracy is partially lifted by the interaction, and (ii)~the details of the low-energy spectrum becomes doping-dependent. For example, at or near the undoped state, interactions separate the eight bands into two quartets (one quartet is almost filled, the other is almost empty), while for two electrons per Moir{e} cell, the quartets are pulled apart, and doublets emerge. When the doping is equal to one or three electrons per cell, the doublets split into singlets. Hole doping produces similar effects. As a result, electronic properties (e.g., the density of states at the Fermi energy) demonstrate oscillating dependence on the doping concentration. This allows us to reproduce qualitatively the behavior of the conductance observed recently in experiments [Cao et al., Nature {bf 556}, 80 (2018)]. Near half-filling, the electronic spectrum loses hexagonal symmetry indicating the appearance of a many-body nematic state.
The authors report micro-Raman investigation of changes in the single and bilayer graphene crystal lattice induced by the low and medium energy electron-beam irradiation (5 and 20 keV). It was found that the radiation exposures results in appearance of the strong disorder D band around 1345 1/cm indicating damage to the lattice. The D and G peak evolution with the increasing radiation dose follows the amorphization trajectory, which suggests graphenes transformation to the nanocrystalline, and then to amorphous form. The results have important implications for graphene characterization and device fabrication, which rely on the electron microscopy and focused ion beam processing.
Moire systems displaying flat bands have emerged as novel platforms to study correlated electron phenomena. Insulating and superconducting states appear upon doping magic angle twisted bilayer graphene (TBG), and there is evidence of correlation induced effects at the charge neutrality point (CNP) which could originate from spontaneous symmetry breaking. Our theoretical calculations show how optical conductivity measurements can distinguish different symmetry breaking states, and reveal the nature of the correlated states. In the specific case of nematic order, which breaks the discrete rotational symmetry of the lattice, we find that the Dirac cones are displaced, not only in momentum space but also in energy, inducing finite Drude weight at the CNP. We also show that the sign of the dc conductivity anisotropy induced by a nematic order depends on the degree of lattice relaxation, the doping and the nature of the symmetry breaking.
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