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Register a new userEnhanced optical nonlinearities in epitaxial quantum dots lasers on silicon for future photonic integrated systems
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Four-wave mixing (FWM) is an important nonlinear optical phenomenon that underlines many of the discoveries and device applications since the laser was invented. Examples include parametric amplification, mode-locked pulses and frequency combs, and in the quantum optics regime, entangled-photon generation, squeezed-state production and optical transduction from the visible to infrared wavelengths. For quantum dot systems, the basic understanding of FWM is limited by the conventional investigation method, which concentrates on the FWM susceptibility measured with optical amplifiers. This paper addresses this weakness by performing laser experiments to account for all optical nonlinearities contributing to the FWM signal. Meanwhile, we gain valuable insight into the intricate interplay among optical nonlinearities. Using quantum dot lasers directly grown on silicon, we achieved FWM conversion efficiency sufficient to demonstrate self-mode-locking in a single-section laser diode, with sub-ps mode-locked pulse duration and kHz frequency-comb linewidth. A comparison with first-principles based multimode laser theory indicates measured FWM conversion efficiencies that are close to the theoretical limit. An advantage over earlier studies and crucial to confidence in the results are the quality and reproducibility of state-of-the-art quantum dot lasers. They make possible the detailed study of conversion efficiency over a broad parameter space, and the identification of the importance of p-doping. Systematic improvement based on our understanding of underlying physics will lead to transform limited performance and effective compensation of intrinsic and extrinsic effects, such as linewidth enhancement and background dispersion. The integration of FWM with lasing impacts numerous optoelectronic components used in telecom and datacom.
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The third-order optical nonlinearity in optical waveguides has found applications in optical switching, optical wavelength conversion, optical frequency comb generation, and ultrafast optical signal processing. The development of an integrated waveguide platform with a high nonlinearity is therefore important for nonlinear integrated photonics. Here, we report the observation of an enhancement in the nonlinearity of an air-cladding silicon pedestal waveguide. We observe enhanced nonlinear spectral broadening compared to a conventional silicon-on-insulator waveguide. At the center wavelength of 1555 nm, the nonlinear-index coefficient of air-cladding silicon pedestal waveguide is measured to be about 5% larger than that of a conventional silicon-on-insulator waveguide. We observe enhanced spectral broadening from self-phase modulation of an optical pulse in the pedestal waveguide. The interaction of light with the confined acoustic phonons in the pedestal structure gives rise to a larger nonlinear-index coefficient. The experimental results agree well with the theoretical models.
Due to the inherent in-direct bandgap nature of Silicon, heterogeneous integration of semiconductor lasers on Silicon on Insulator (SOI) is crucial for next-generation on-chip optical interconnects. Compact, high-efficient and high-tolerant couplers between III-V light source and silicon chips have been the challenge for photonic integrated circuit (PIC). Here, we redesign the taper adiabatic coupler with the total coupling length of only 4 {mu}m, and propose another two novel slot coupler and bridge-SWG coupler with both coupling length of 7 {mu}m, to heterogeneously integrate III-V lasers and silicon chips. We study theoretically the optical mode coupling process through the redesigned taper coupler, the final coupling results match well with the simulation in 3D-FDTD. The three compact couplers represent fundamental TE mode coupling efficiencies all over 90%, even 95.7% for bridge-SWG coupler, to the best of our knowledge, are also the shortest coupling structures (7 um). Moreover, these coupling structures also possess excellent fabrication tolerance.
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, nonoptimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output through the SiN waveguide and sub-kHz fundamental linewidth, addressing all of the aforementioned issues. We also show Hertz-level linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-$Q$ SiN resonators, mark a milestone towards a fully-integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.
Optical beamforming networks (OBFNs) based on optical true time delay lines (OTTDLs) are well-known as the promising candidate to solve the bandwidth limitation of traditional electronic phased array antennas (PAAs) due to beam squinting. Here we report the first monolithic 1x8 microwave photonic beamformer based on switchable OTTDLs on the silicon-on-insulator platform. The chip consists of a modulator, an eight-channel OBFN, and 8 photodetectors, which includes hundreds of active and passive components in total. It has a wide operating bandwidth from 8 to 18 GHz, which is almost two orders larger than that of electronic PAAs. The beam can be steered to 31 distinguishable angles in the range of -75.51{deg} to 75.64{deg} based on the beam pattern calculation with the measured RF response. The response time for beam steering is 56 {mu}s. These results represent a significant step towards the realization of integrated microwave photonic beamformers that can satisfy compact size and low power consumption requirements for the future radar and wireless communication systems.
Optical isolators are an important building block in photonic computation and communication. In traditional optics, isolators are realized with magneto-optical garnets. However, it remains challenging to incorporate such materials on an integrated platform because of the difficulty in material growth and bulky device footprint. Here, we propose an ultracompact integrated isolator by exploiting graphenes magneto-optical property on a silicon-on-insulator platform. The photonic nonreciprocity is achieved because the cyclotrons in graphene experiencing different optical spin exhibit different response to counterpropagating light. Taking advantage of cavity resonance effects, we have numerically optimized a device design, which shows excellent isolation performance with the extinction ratio over 45 dB and the insertion loss around 12 dB at a wavelength near 1.55 um. Featuring graphenes CMOS compatibility and substantially reduced device footprint, our proposal sheds light to monolithic integration of nonreciprocal photonic devices.
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