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Register a new userTwo-step solid-state synthesis of ternary nitride materials
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Ternary nitride materials hold promise for many optical, electronic, and refractory applications yet their preparation via solid-state synthesis remains challenging. Often, high pressures or reactive gasses are used to manipulate the effective chemical potential of nitrogen, yet these strategies require specialized equipment. Here we report on a simple two-step synthesis using ion-exchange reactions that yield rocksalt-derived MgZrN$_2$ and Mg$_2$NbN$_3$, as well as layered MgMoN$_2$. All three compounds show nearly temperature-independent and weak paramagnetic responses to an applied magnetic field at cryogenic temperatures indicating phase pure products. The key to synthesizing these ternary materials is an initial low-temperature step (300-450 $^{circ}$C) to promote Mg-M-N bond formation. Then the products are annealed (800-900 $^{circ}$C) to increase crystalline domains of the ternary product. Calorimetry experiments reveal that initial reaction temperatures are determined by phase transitions of reaction precursors, whereas heating directly to high temperatures results in decomposition. These two-step reactions provide a rational guide to material discovery of other bulk ternary nitrides.
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A two step solid state reaction route has been presented to synthesize monophasic cobalt tellurate (Co3TeO6, CTO) using Co3O4 and TeO2 as starting reagents. During synthesis, initial ingredient Co3O4 is found better than CoO in circumventing the intermediate Co5TeO8 or CoTeO3 phases. High resolution Synchrotron X-ray Diffraction has been used to probe different phases present in synthesized CTO and to achieve its single phase. Further, XANES studies near Co K and Te L-edge reveal mixed oxidation states of Co (i.e. Co2+ and Co3+) and +VI valence state of Te respectively, which is also confirmed with XPS. Charge imbalance due to different oxidation states of the Co-ions has been observed to be compensated by plausible Te-cations vacancy. Enhanced multiferroic properties like effective magnetic moment (JAP 116, (2014)) have been correlated with the present synthesis route.
Interest in inorganic ternary nitride materials has grown rapidly over the past few decades, as their diversity of chemistries and structures make them appealing for a variety of applications. Due to synthetic challenges posed by the stability of N2, the number of predicted nitride compounds dwarfs those that have been synthesized, offering a breadth of opportunity for exploration. This review summarizes the fundamental properties and structural chemistry of ternary nitrides, leveraging metastability and the impact of nitrogen chemical potential. A discussion of prevalent defects, both detrimental and beneficial, is followed by a survey of synthesis techniques and their interplay with metastability. Throughout the review, we highlight applications (such as solid-state lighting, electrochemical energy storage, and electronic devices) in which ternary nitrides show particular promise.
The van der Waals (vdW) force is a ubiquitous short-range interaction between atoms and molecules that underlies many fundamental phenomena. Early pairwise additive theories pioneered by Keesom, Debye, and London suggested the force to be monotonically attractive for separations larger than the vdW contact distance. However, seminal work by Lifshitz et al. predicted that quantum fluctuations can change the sign of vdW interactions from attractive to repulsive. Although recent experiments carried out in fluid environment have demonstrated the long-range counterpart the Casimir repulsion, it remains controversial whether the vdW repulsion exists, or is sufficiently strong to alter solid-state properties. Here we show that the atomic thickness and birefringent nature of two-dimensional (2D) materials, arising from their anisotropic dielectric responses, make them a versatile medium to tailor the many-body Lifshitz-vdW interactions at solid-state interfaces. Based on our theoretical prediction, we experimentally examine two heterointerface systems in which the vdW repulsion becomes comparable to the two-body attraction. We demonstrate that the in-plane movement of gold atoms on a sheet of freestanding graphene becomes nearly frictionless at room temperature. Repulsion between molecular solid and gold across graphene results in a new polymorph with enlarged out-of-plane lattice spacings. The possibility of creating repulsive energy barriers in nanoscale proximity to an uncharged solid surface offers technological opportunities such as single-molecule actuation and atomic assembly.
Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic and refractory properties. Breaking this dichotomy, here we report on ternary nitride semiconductors with rocksalt crystal structures, remarkable optoelectronic properties, and the general chemical formula Mg$_{x}$TM$_{1-x}$N (TM=Ti, Zr, Hf, Nb). These compounds form over a broad metal composition range and our experiments show that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8-2.1 eV). Lattice parameters are compatible with growth on a variety of substrates, and epitaxially grown MgZrN$_{2}$ exhibits remarkable electron mobilities approaching 100 cm$^{2}$V$^{-1}$s$^{-1}$. Ab initio calculations reveal that these compounds have disorder-tunable optical properties, large dielectric constants and low carrier effective masses that are insensitive to disorder. Overall, these experimental and theoretical results highlight Mg$_{G-3}$TMN$_{G-2}$ rocksalts as a new class of semiconductor materials with promising properties for optoelectronic applications.
Zinc-based nitride CaZn2N2 films grown by molecular beam epitaxy (MBE) with a plasma-assisted active nitrogen-radical source are promising candidates of next-generation semiconductors for light-emitting diodes and solar cells. This nitride compound has previously only been synthesized in a bulk form by ultrahigh-pressure synthesis at 5 GPa. Three key factors have been found to enable heteroepitaxial film growth: (i) precise tuning of the individual flux rates of Ca and Zn, (ii) the use of GaN template layers on sapphire c-plane as substrates, and (iii) the application of MBE with an active N-radical source. Because other attempts at physical vapor deposition and thermal annealing processes have not produced CaZn2N2 films of any phase, this rf-plasma-assisted MBE technique represents a promising way to stabilize CaZn2N2 epitaxial films. The estimated optical band gap is ~1.9 eV, which is consistent with the value obtained from bulk samples. By unintentional carrier doping, n- and p-type electronic conductions are attained with low carrier densities of the order of 1013 /cm3. These features represent clear advantages when compared with Zn-based oxide semiconductors, which usually have much higher carrier densities irrespective of their intentionally undoped state. The carrier mobilities at room temperature are 4.3 cm2/(Vs) for electrons and 0.3 cm2/(Vs) for hole carriers, which indicates that transport properties are limited by grain boundary scattering, mainly because of the low-temperature growth at 250 {deg}C, which realizes a high nitrogen chemical potential.
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