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Register a new userSqueeze-film effect on atomically thin resonators in the high-pressure limit
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The resonance frequency of membranes depends on the gas pressure due to the squeeze-film effect, induced by the compression of a thin gas film that is trapped underneath the resonator by the high frequency motion. This effect is particularly large in low-mass graphene membranes, which makes them promising candidates for pressure sensing applications. Here, we study the squeeze-film effect in single layer graphene resonators and find that their resonance frequency is lower than expected from models assuming ideal compression. To understand this deviation, we perform Boltzmann and continuum finite-element simulations, and propose an improved model that includes the effects of gas leakage and can account for the observed pressure dependence of the resonance frequency. Thus, this work provides further understanding of the squeeze-film effect and provides further directions into optimizing the design of squeeze-film pressure sensors from 2D materials.
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We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to $sim3.5 text{ meV}$ for n-MoSe$_{2}$, $sim5.0 text{ meV}$ for p-WSe$_{2}$ and $sim4.8 text{ meV}$ for n-MoS$_{2}$. Evidence is obtained that the hBN environment effectively lowers the Fermi level since the relative spectral weight shifts towards the neutral exciton emission in n-doped TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find that fully encapsulated MoS$_{2}$ shows resolvable exciton and trion emission even after high power density excitation in contrast to non-encapsulated materials. Our findings suggest that encapsulation of mechanically exfoliated few-monolayer TMDCs within nanometer thick hBN dramatically enhances optical quality, producing ultra-narrow linewidths that approach the homogeneous limit.
We discuss how reactive and dissipative non-linearities affect the intrinsic response of superconducting thin-film resonators. We explain how most, if not all, of the complex phenomena commonly seen can be described by a model in which the underlying resonance is a single-pole Lorentzian, but whose centre frequency and quality factor change as external parameters, such as readout power and frequency, are varied. What is seen during a vector-network-analyser measurement is series of samples taken from an ideal Lorentzian that is shifting and spreading as the readout frequency is changed. According to this model, it is perfectly proper to refer to, and measure, the resonant frequency and quality factor of the underlying resonance, even though the swept-frequency curves appear highly distorted and hysteretic. In those cases where the resonance curve is highly distorted, the specific shape of the trajectory in the Argand plane gives valuable insights into the second-order physical processes present. We discuss the formulation and consequences of this approach in the case of non-linear kinetic inductance, two-level-system loss, quasiparticle generation, and a generic model based on a power-law form. The generic model captures the key features of specific dissipative non-linearities, but additionally leads to insights into how general dissipative processes create characteristic forms in the Argand plane. We provide detailed formulations in each case, and indicate how they lead to the wide variety of phenomena commonly seen in experimental data. We also explain how the properties of the underlying resonance can be extracted from this data. Overall, our paper provides a self-contained compendium of behaviour that will help practitioners interpret and determine important parameters from distorted swept-frequency measurements.
Monolayers of graphene and hexagonal boron nitride (hBN) are highly permeable to thermal protons. For thicker two-dimensional (2D) materials, proton conductivity diminishes exponentially so that, for example, monolayer MoS2 that is just three atoms thick is completely impermeable to protons. This seemed to suggest that only one-atom-thick crystals could be used as proton conducting membranes. Here we show that few-layer micas that are rather thick on the atomic scale become excellent proton conductors if native cations are ion-exchanged for protons. Their areal conductivity exceeds that of graphene and hBN by one-two orders of magnitude. Importantly, ion-exchanged 2D micas exhibit this high conductivity inside the infamous gap for proton-conducting materials, which extends from 100 C to 500 C. Areal conductivity of proton-exchanged monolayer micas can reach above 100 S cm-2 at 500 C, well above the current requirements for the industry roadmap. We attribute the fast proton permeation to 5 A-wide tubular channels that perforate micas crystal structure which, after ion exchange, contain only hydroxyl groups inside. Our work indicates that there could be other 2D crystals with similar nm-scale channels, which could help close the materials gap in proton-conducting applications.
Stacking order can significantly influence the physical properties of two-dimensional (2D) van der Waals materials. The recent isolation of atomically thin magnetic materials opens the door for control and design of magnetism via stacking order. Here we apply hydrostatic pressure up to 2 GPa to modify the stacking order in a prototype van der Waals magnetic insulator CrI3. We observe an irreversible interlayer antiferromagnetic (AF) to ferromagnetic (FM) transition in atomically thin CrI3 by magnetic circular dichroism and electron tunneling measurements. The effect is accompanied by a monoclinic to a rhombohedral stacking order change characterized by polarized Raman spectroscopy. Before the structural change, the interlayer AF coupling energy can be tuned up by nearly 100% by pressure. Our experiment reveals interlayer FM coupling, which is the established ground state in bulk CrI3, but never observed in native exfoliated thin films. The observed correlation between the magnetic ground state and the stacking order is in good agreement with first principles calculations and suggests a route towards nanoscale magnetic textures by moire engineering.
The field of two-dimensional materials has been developing at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become available, together with techniques enabling their assembly into functional heterostructures. The strategy to detect these atomically thin crystals has however remained unchanged since the discovery of graphene. Such an absence of evolution is starting to pose problems because for many of the 2D materials of current interest the optical contrast provided by the commonly used detection procedure is insufficient to identify the presence of individual monolayers or to determine unambiguously the thickness of atomically thin multilayers. Here we explore an alternative detection strategy, in which the enhancement of optical contrast originates from the use of optically inhomogeneous substrates, leading to diffusively reflected light. Owing to its peculiar polarization properties and to its angular distribution, diffusively reflected light allows a strong contrast enhancement to be achieved through the implementation of suitable illumination-detection schemes. We validate this conclusion by carrying out a detailed quantitative analysis of optical contrast, which fully reproduces our experimental observations on over 60 WSe$_2$ mono-, bi-, and trilayers. We further validate the proposed strategy by extending our analysis to atomically thin phosphorene, InSe, and graphene crystals. Our conclusion is that the use of diffusively reflected light to detect and identify atomically thin layers is an interesting alternative to the common detection scheme based on Fabry-Perot interference, because it enables atomically thin layers to be detected on substrates others than the commonly used Si/SiO$_2$, and it may offer higher sensitivity depending on the specific 2D material considered.
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