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Register a new userOptically gated terahertz-field-driven switching of antiferromagnetic CuMnAs
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We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller.
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A method to perform spectrum analysis on low power signals between 0.1 and 10 THz is proposed. It utilizes a nanoscale antiferromagnetic tunnel junction (ATJ) that produces an oscillating tunneling anisotropic magnetoresistance, whose frequency is dependent on the magnitude of an evanescent spin current. It is first shown that the ATJ oscillation frequency can be tuned linearly with time. Then, it is shown that the ATJ output is highly dependent on matching conditions that are highly dependent on the dimensions of the dielectric tunneling barrier. Spectrum analysis can be performed by using an appropriately designed ATJ, whose frequency is driven to increase linearly with time, a low pass filter, and a matched filter. This method of THz spectrum analysis, if realized in experiment, will allow miniaturized electronics to rapidly analyze low power signals with a simple algorithm. It is also found by simulation and analytical theory that for an ATJ with a 0.09 $mu$m$^2$ footprint, spectrum analysis can be performed over a 0.25 THz bandwidth in just 25 ns on signals that are at the Johnson-Nyquist thermal noise floor.
Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Neel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Neel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism.
In this work, we study the microwave field driven antiferromagnetic domain wall motion in an antiferromagnetic nanowire, using the numerical calculations based on a classical Heisenberg spin model. We show that a proper combination of a static magnetic field plus an oscillating field perpendicular to the nanowire axis is sufficient to drive the domain wall propagation along the nanowire with the axial magnetic anisotropy. More importantly, the drift velocity at the resonance frequency is comparable to that induced by temperature gradients, suggesting that microwave field can be a very promising tool to control domain wall motions in antiferromagnetic nanostructures. Furthermore, the dependences of resonance frequency and drift velocity on the static and oscillating fields, the axial anisotropy, and the damping constant are discussed in details. This work provides useful information for the spin dynamics in antiferromagnetic nanostructures for spintronics applications.
We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. We get 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9 _ 2.7 THz range. We then integrate our modulator with a multimode THz QCL. By adjusting the modulator operational bandwidth, we demonstrate that the graphene modulator can partially compensates the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the laser operational range, with 98 equidistant optical modes and with a spectral coverage of ~ 1.2 THz. This has significant potential for frontier applications in the terahertz, as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and as a metrological tool for spectroscopy at THz frequencies.
The theory behind the electrical switching of antiferromagnets is premised on the existence of a well defined broken symmetry state that can be rotated to encode information. A spin glass is in many ways the antithesis of this state, characterized by an ergodic landscape of nearly degenerate magnetic configurations, choosing to freeze into a distribution of these in a manner that is seemingly bereft of information. In this study, we show that the coexistence of spin glass and antiferromagnetic order allows a novel mechanism to facilitate the switching of the antiferromagnet Fe$_{1/3+delta}$NbS$_2$, which is rooted in the electrically-stimulated collective winding of the spin glass. The local texture of the spin glass opens an anisotropic channel of interaction that can be used to rotate the equilibrium orientation of the antiferromagnetic state. The use of a spin glass collective dynamics to electrically manipulate antiferromagnetic spin textures has never been applied before, opening the field of antiferromagnetic spintronics to many more material platforms with complex magnetic textures.
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