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Register a new userNarrow-gap Semiconducting Superhard Amorphous Carbon with Superior Toughness
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New carbon forms exhibiting extraordinary physico-chemical properties can be generated from nanostructured precursors under extreme pressure. Nevertheless, synthesis of such fascinating materials is often not well understood that results, as is the case of C60 precursor, in irreproducibility of the results and impeding further progress in the materials design. Here the semiconducting amorphous carbon having bandgaps of 0.1-0.3 eV and the advantages of isotropic superhardness and superior toughness over single-crystal diamond and inorganic glasses are produced from transformation of fullerene at high pressure and moderate temperatures. A systematic investigation of the structure and bonding evolution was carried out by using rich arsenal of complimentary characterization methods, which helps to build a model of the transformation that can be used in further high p,T synthesis of novel nanocarbon systems for advanced applications. The produced amorphous carbon materials have the potential of demanding optoelectronic applications that diamond and graphene cannot achieve
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Two dimensional (2D) materials with a finite band gap and high carrier mobility are sought after materials from both fundamental and technological perspectives. In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of carbon phosphide (CP) monolayer consisted of sp2 hybridized C atoms and sp3 hybridized P atoms in hexagonal networks. Two of the phases, referred to as {alpha}-CP and b{eta}-CP with puckered and buckled surfaces, respectively are semiconducting with highly anisotropic electronic and mechanical properties. More remarkably, they have lightest electrons and holes among the known 2D semiconductors, yielding superior carrier mobility. The {gamma}-CP has a distorted hexagonal network and exhibits a semi-metallic behavior with Dirac cones. These theoretical findings suggest the binary CP monolayer to be yet unexplored 2D materials holding great promises for applications in high-performance electronics and optoelectronics.
We present an extension and revision of the spectroscopic and structural data of the mixed stack charge transfer (CT) crystal 3,3$^prime$,5,5$^prime$-tetramethylbenzidine--tetrafluoro-tetracyanoquinodimethane (TMB-TCNQF$_4$), associated with new electric and dielectric measurements. Refinement of syncrotron structural data at low temperature have led to revise the previously reported [Phys. Rev. Mat. textbf{2}, 024602 (2018)] $C2/m$ structure. The revised structure is $P2_1/m$, with two dimerized stacks per unit cell, and is consistent with the vibrational data. However, polarized Raman data in the low-frequency region also indicate that by increasing temperature above 200 K the structure presents an increasing degree of disorder mainly along the stack axis. This finds confirmation in the analysis of the anisotropic displacement parameters of the structure. TMB-TCNQF$_4$ is confirmed to be a narrow gap semiconductor ($E_a sim 0.3$ eV) with room $T$ conductivity of $sim 10^{-4}~ Omega^{-1}$ cm$^{-1}$, while dielectric measurement have evidenced a typical relaxor ferroelectric behavior already at room $T$, with a peak in real part of dielectric constant $epsilon(T, u)$ around 200 K and 0.1 Hz. The relaxor behavior is explained in terms of the presence of spin solitons separating domains of opposite polarity that yield to ferrolectric nanodomains.
This Comment points out a number of errors in the recent paper by Zarechnaya, Dubrovinskaia, Dubrovinsky, et al. (Phys. Rev. Lett. 102, 185501 (2009)). Results and conclusions presented by Zarechnaya et al. (2009) are either incorrect or have been presented before.
ABSTRACT: Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently non-trivial topology. Here we report the synthesis and characterization of a new family of narrow-gap semiconductors, $R$$_{3}$Cd$_{2}$As$_{6}$ ($R=$ La, Ce). Single crystal x-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279~K in La$_{3}$Cd$_{2}$As$_{6}$ and at 136~K in Ce$_{3}$Cd$_{2}$As$_{6}$ and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by thirteen orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square net materials within a $I4/mmm$ parent structure are promising clean narrow-gap semiconductors.
Traditionally, all superhard carbon phases including diamond are electric insulators and all conductive carbon phases including graphite are mechanically soft. Based on first-principles calculation results, we report a superhard but conductive carbon phase C21-sc which can be obtained through increasing the sp3 bonds in the previously proposed soft and conductive phase C20-sc (Phys. Rev. B 74, 172101 2006). We also show that further increase of sp3 bonds in C21-sc results in a superhard and insulating phase C22-sc with sp3 bonds only. With C20-sc, C21-sc, C22-sc and graphite, the X-ray diffraction peaks from the unidentified carbon material synthesized by compressing the mixture of tetracyanoethylene and carbon black (Carbon, 41, 1309, 2003) can be understood. In view of its positive stability, superhard and conductive features, and the strong possibility of existence in previous experiments, C21-sc is a promising multi-functional material with potential applications in extreme conditions.
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