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Register a new userSwitchable induced-transmission filters enabled by vanadium dioxide
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Abstract: An induced-transmission filter (ITF) uses an ultrathin layer of metal positioned at an electric-field node within a dielectric thin-film bandpass filter to select one transmission band while suppressing other transmission bands that would have been present without the metal layer. Here, we introduce a switchable mid-infrared ITF where the metal film can be switched on and off, enabling the modulation of the filter response from single-band to multiband. The switching is enabled by a deeply subwavelength film of vanadium dioxide (VO2), which undergoes a reversible insulator-to-metal phase transition. We designed and experimentally demonstrated an ITF that can switch between two states: one broad passband across the long-wave infrared (LWIR, 8 - 12 um) and one narrow passband at ~8.8 um. Our work generalizes the ITF -- previously a niche type of bandpass filter -- into a new class of tunable devices. Furthermore, our unique fabrication process -- which begins with thin-film VO2 on a suspended membrane -- enables the integration of VO2 into any thin-film assembly that is compatible with physical vapor deposition (PVD) processes, and is thus a new platform for realizing tunable thin-film filters.
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The insulator-to-metal transition (IMT) in vanadium dioxide (VO2) can enable a variety of optics applications, including switching and modulation, optical limiting, and tuning of optical resonators. Despite the widespread interest in optics, the optical properties of VO2 across its IMT are scattered throughout the literature, and are not available in some wavelength regions. We characterized the complex refractive index of VO2 thin films across the IMT for free-space wavelengths from 300 nm to 30 {mu}m, using broadband spectroscopic ellipsometry, reflection spectroscopy, and the application of effective-medium theory. We studied VO2 thin films of different thickness, on two different substrates (silicon and sapphire), and grown using different synthesis methods (sputtering and sol gel). While there are differences in the optical properties of VO2 synthesized under different conditions, they are relatively minor compared to the change resulting from the IMT, most notably in the ~2 - 11 {mu}m range where the insulating phase of VO2 has relatively low optical loss. We found that the macroscopic optical properties of VO2 are much more robust to sample-to-sample variation compared to the electrical properties, making the refractive-index datasets from this article broadly useful for modeling and design of VO2-based optical and optoelectronic components.
High performance metasurfaces for thermal radiative cooling applications can be identified using computational optimization methods. This work has identified an easy-to-fabricate temperature phase transition VO2 nanowire array laid atop dielectric BaF2 Fabry-Perot cavity-on-metal with total coating thickness of 2 um. This optimized structure has ability to self-adaptively switch between high reflectance at low temperature to high emissivity at high temperature in the broad thermal infrared spectrum. This design demonstrates exceptional turn-down figure-of-merit compared to previously realized configurations utilizing VO2 metasurfaces and multilayers. The mechanism is achieved with a sub-wavelength nanowire array effective medium that switches between anti-reflecting gradient coating and Fabry-Perot interference. This thin metasurface coating could impact self-cooling of the solar cells, batteries, and electrical devices where risk presents at high temperatures.
Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary undergoes strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of the nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The phase states of the films are imaged by multi-length-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates a critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films.
Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). We demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO2 film with EUV diffraction from the optically excited sample. The VO2 exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separate the two features.
Recently, phase-change materials (PCMs) have drawn more attention due to the dynamically tunable optical properties. Here, we investigate the active control of electromagnetically induced transparency (EIT) analogue based on terahertz (THz) metamaterials integrated with vanadium oxide (VO2). Utilizing the insulator-to-metal transition of VO2, the amplitude of EIT peak can be actively modulated with a significant modulation depth. Meanwhile the group delay within the transparent window can also be dynamically tuned, achieving the active control of slow light effect. Furthermore, we also introduce independently tunable transparent peaks as well as group delay based on a double-peak EIT with good tuning performance. Finally, based on broadband EIT, the active tuning of quality factor of the EIT peak is also realized. This work introduces active EIT control with more degree of freedom by employing VO2, and can find potential applications in future wireless and ultrafast THz communication systems as multi-channel filters, switches, spacers, logic gates and modulators.
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