No Arabic abstract
The non-trivial magnetic texture in real space gives rise to the intriguing phenomenon of topological Hall effect (THE), which is relatively less explored in topological semimetals. Here, we report large THE in the antiferromagnetic (AFM) state in single crystals of EuAgAs, an AFM Dirac semimetal. EuAgAs hosts AFM ground state below $T_N$ = 12 K with a weak ferromagnetic component. The in-plane isothermal magnetization below $T_N$ exhibits a weak metamagnetic transition. We also observe chiral anomaly induced positive longitudinal magnetoconductivity which indicates a Weyl fermion state under applied magnetic field. The first-principles calculations reveal that EuAgAs is an AFM Dirac semimetal with a pair of Dirac cones, and therefore, a Weyl semimetailic state can be realized under time-reversal symmetry breaking via an applied magnetic field. Our study establishes that EuAgAs is a novel system for exploiting the interplay of band topology and the topology of the magnetic texture.
The anomalous Hall effect (AHE), a Hall signal occurring without an external magnetic field, is one of the most significant phenomena. However, understanding the AHE mechanism has been challenging and largely restricted to ferromagnetic metals. Here, we investigate the recently discovered AHE in the chiral antiferromagnet Mn3Sn by measuring a thermal analog of the AHE, known as an anomalous thermal Hall effect (ATHE). The amplitude of the ATHE scales with the anomalous Hall conductivity of Mn3Sn over a wide temperature range, demonstrating that the AHE of Mn3Sn arises from a dissipationless intrinsic mechanism associated with the Berry curvature. Moreover, we find that the dissipationless AHE is significantly stabilized by shifting the Fermi level toward the magnetic Weyl points. Thus, in Mn3Sn, the Berry curvature emerging from the proposed magnetic Weyl fermion state is a key factor for the observed AHE and ATHE.
Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric current and magnetic field, an exotic phenomenon called chiral anomaly arises and negative longitudinal resistance can be detected. Recently, a new phenomenon named planer Hall effect (PHE) is considered to be another indication of chiral anomaly which has been observed in many topological semimetals. However, it still remains a question that is the PHE only attributed to chiral anomaly? Here we demonstrate the PHE in a new-discovered type-II Dirac semimetal NiTe2 by low temperature transport. However, after detailed analysis, we conclude that the PHE results from the trivial orbital magnetoresistance. This work reveals that PHE is not a sufficient condition of chiral anomaly and one need to take special care of other non-topological contribution in such studies.
Unconventional surface states protected by non-trivial bulk orders are sources of various exotic quantum transport in topological materials. One prominent example is the unique magnetic orbit, so-called Weyl orbit, in topological semimetals where two spatially separated surface Fermi-arcs are interconnected across the bulk. The recent observation of quantum Hall states in Dirac semimetal Cd3As2 bulks have drawn attention to the novel quantization phenomena possibly evolving from the Weyl orbit. Here we report surface quantum oscillation and its evolution into quantum Hall states in Cd3As2 thin film samples, where bulk dimensionality, Fermi energy, and band topology are systematically controlled. We reveal essential involvement of bulk states in the quantized surface transport and the resultant quantum Hall degeneracy depending on the bulk occupation. Our demonstration of surface transport controlled in film samples also paves a way for engineering Fermi-arc-mediated transport in topological semimetals.
The analogues of elementary particles have been extensively searched for in condensed matter systems because of both scientific interests and technological applications. Recently massless Dirac fermions were found to emerge as low energy excitations in the materials named Dirac semimetals. All the currently known Dirac semimetals are nonmagnetic with both time-reversal symmetry $mathcal{T}$ and inversion symmetry $mathcal{P}$. Here we show that Dirac fermions can exist in one type of antiferromagnetic systems, where $mathcal{T}$ and $mathcal{P}$ are broken but their combination $mathcal{PT}$ is respected. We propose orthorhombic antiferromagnet CuMnAs as a candidate, analyze the robustness of the Dirac points with symmetry protections, and demonstrate its distinctive bulk dispersions as well as the corresponding surface states by emph{ab initio} calculations. Our results give a new route towards the realization of Dirac materials, and provide a possible platform to study the interplay of Dirac fermion physics and magnetism.
The orthorhombic antiferromagnetic compound CuMnAs was recently predicted to be an antiferromagnetic Dirac semimetal if both the Ry gliding and S2z rotational symmetries are preserved in its magnetic ordered state. In our previous work on Cu0.95MnAs and Cu0.98Mn0.96As, we showed that in their low temperature commensurate antiferromagnetic state the b axis is the magnetic easy axis, which breaks the S2z symmetry. As a result, while the existence of Dirac fermions is no longer protected, the polarized surface state makes this material potentially interesting for antiferromagnetic spintronics. In this paper, we report a detailed study of the anisotropic magnetic properties and magnetoresistance of Cu0.95MnAs and Cu0.98Mn0.96As. Our study shows that in Cu0.95MnAs the b axis is the easy axis and the c axis is the hard axis. Furthermore, it reveals that Cu0.95MnAs features a spin-flop phase transition at high temperatures and low fields when the field is applied along the easy b axis, resulting in canted antiferromagnetism. However, no metamagnetic transition is observed in Cu0.98Mn0.96As, indicating that the magnetic interactions in this system are very sensitive to Cu vacancies and Cu/Mn site mixing.