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Register a new userUnveiling the mechanism of bulk spin-orbit torques within chemically disordered Fe$_x$Pt$_{1-x}$ single layers
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Recent discovery of spin-orbit torques (SOTs) within magnetic single-layers has attracted attention in the field of spintronics. However, it has remained elusive as to how to understand and how to tune the SOTs. Here, utilizing the single layers of chemically disordered Fe$_x$Pt$_{1-x}$, we unveil the mechanism of the unexpected bulk SOTs by studying their dependence on the introduction of a controlled vertical composition gradient and on temperature. We find that the bulk damping like SOT arises from an imbalanced internal spin current that is transversely polarized and independent of the magnetization orientation. The torque can be strong only in the presence of a vertical composition gradient and the SOT efficiency per electric field is insensitive to temperature but changes sign upon reversal of the orientation of the composition gradient, which are in analogue to behaviors of the strain. From these characteristics we conclude that the imbalanced internal spin current originates from a bulk spin Hall effect and that the associated inversion asymmetry that allows for a non-zero net torque is most likely a strain non-uniformity induced by the composition gradient. The fieldlike SOT is a relatively small bulk effect compared to the dampinglike SOT. This work points to the possibility of developing low-power single-layer SOT devices by strain engineering.
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Strong damping-like spin-orbit torque ({tau}DL) has great potential for enabling ultrafast energy-efficient magnetic memories, oscillators, and logic. So far, the reported {tau}DL exerted on a thin-film magnet must result from an externally generated spin current or from an internal non-equilibrium spin polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the first time demonstrate a very strong, unexpected {tau}DL from current flow within ferromagnetic single layers of chemically disordered, face-centered-cubic CoPt. We establish that the novel {tau}DL is a bulk effect, with the strength per unit current density increasing monotonically with the CoPt thickness, and is insensitive to the presence or absence of spin sinks at the CoPt surfaces. This {tau}DL most likely arises from a net transverse spin polarization associated with a strong spin Hall effect (SHE), while there is no detectable long-range asymmetry in the material. These results broaden the scope of spin-orbitronics and provide a novel avenue for developing single-layer-based spin-torque memory, oscillator, and logic technologies.
We report on a new method to determine the degree of bulk spin polarization in single crystal Co$_{(1-x)}$Fe$_x$S$_2$ by modeling magnetic Compton scattering with {it ab initio} calculations. Spin-dependent Compton profiles were measured for CoS$_2$ and Co$_{0.9}$Fe$_{0.1}$S$_2$. The {it ab initio} calculations were then refined by rigidly shifting the bands to provide the best fit between the calculated and experimental directional profiles for each sample. The bulk spin polarizations, $P$, corresponding to the spin-polarized density of states at the Fermi level, were then extracted from the {it refined} calculations. The values were found to be $P=-72 pm 6 %$ and $P=18 pm 7%$ for CoS$_2$ and Co$_{0.9}$Fe$_{0.1}$S$_2$ respectively. Furthermore, determinations of $P$ weighted by the Fermi velocity ($v_F$ or $v_F^2$) were obtained, permitting a rigorous comparison with other experimental data and highlighting the experimental dependence of $P$ on $v_F$.
We experimentally investigate spin-orbit torques and spin pumping in NiFe/Pt bilayers with direct and interrupted interfaces. The damping-like and field-like torques are simultaneously measured with spin-torque ferromagnetic resonance tuned by a dc bias current, whereas spin pumping is measured electrically through the inverse spin Hall effect using a microwave cavity. Insertion of an atomically thin Cu dusting layer at the interface reduces the damping-like torque, field-like torque, and spin pumping by nearly the same factor of ~1.4. This finding confirms that the observed spin-orbit torques predominantly arise from diffusive transport of spin current generated by the spin Hall effect. We also find that spin-current scattering at the NiFe/Pt interface contributes to additional enhancement in magnetization damping that is distinct from spin pumping.
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of bulk lattice inversion symmetry breaking. Here we report the observation of spin-orbit torque in an amorphous, non-ferromagnetic Fe$_{x}$Si$_{1-x}$ / cobalt bilayer at room temperature, using spin torque ferromagnetic resonance and harmonic Hall measurements. Both techniques provide a minimum spin torque efficiency of about 3 %, comparable to prototypical heavy metals such as Pt or Ta. According to the conventional theory of the spin Hall effect, a spin current in an amorphous material is not expected to have any substantial contribution from the electronic bandstructure. This, combined with the fact that Fe$_{x}$Si$_{1-x}$ does not contain any high-Z element, paves a new avenue for understanding the underlying physics of spin-orbit interaction and opens up a new class of material systems - silicides - that is directly compatible with complementary metal-oxide-semiconductor (CMOS) processes for integrated spintronics applications.
Spin-orbit torques offer a promising mechanism for electrically controlling magnetization dynamics in nanoscale heterostructures. While spin-orbit torques occur predominately at interfaces, the physical mechanisms underlying these torques can originate in both the bulk layers and at interfaces. Classifying spin-orbit torques based on the region that they originate in provides clues as to how to optimize the effect. While most bulk spin-orbit torque contributions are well studied, many of the interfacial contributions allowed by symmetry have yet to be fully explored theoretically and experimentally. To facilitate progress, we review interfacial spin-orbit torques from a semiclassical viewpoint and relate these contributions to recent experimental results. Within the same model, we show the relationship between different interface transport parameters. For charges and spins flowing perpendicular to the interface, interfacial spin-orbit coupling both modifies the mixing conductance of magnetoelectronic circuit theory and gives rise to spin memory loss. For in-plane electric fields, interfacial spin-orbit coupling gives rise to torques described by spin-orbit filtering, spin swapping and precession. In addition, these same interfacial processes generate spin currents that flow into the non-magnetic layer. For in-plane electric fields in trilayer structures, the spin currents generated at the interface between one ferromagnetic layer and the non-magnetic spacer layer can propagate through the non-magnetic layer to produce novel torques on the other ferromagnetic layer.
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