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Register a new userFinite-size effects of electron transport in PdCoO$_2$
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Added by
Georgios Varnavides
Publication date
2021
fields
Physics
and research's language is
English
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A wide range of unconventional transport phenomena have recently been observed in single-crystal delafossite metals. Here, we present a theoretical framework to elucidate electron transport using a combination of first-principles calculations and numerical modeling of the anisotropic Boltzmann transport equation. Using PdCoO$_2$ as a model system, we study different microscopic electron and phonon scattering mechanisms and establish the mean free path hierarchy of quasiparticles at different temperatures. We treat the anisotropic Fermi surface explicitly to numerically obtain experimentally-accessible transport observables, which bridge between the diffusive, ballistic, and hydrodynamic transport regime limits. We illustrate that distinction between the quasi-ballistic, and quasi-hydrodynamic regimes is challenging and often needs to be quantitative in nature. From first-principles calculations, we populate the resulting transport regime plots, and demonstrate how the Fermi surface orientation adds complexity to the observed transport signatures in micro-scale devices. Our work provides key insights into microscopic interaction mechanisms on open hexagonal Fermi surfaces and establishes their connection to the macroscopic electron transport in finite-size channels.
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Geometric electron optics may be implemented in solid state when transport is ballistic on the length scale of a device. Currently, this is realized mainly in 2D materials characterized by circular Fermi surfaces. Here we demonstrate that the nearly perfectly hexagonal Fermi surface of PdCoO2 gives rise to highly directional ballistic transport. We probe this directional ballistic regime in a single crystal of PdCoO2 by use of focused ion beam (FIB) micro-machining, defining crystalline ballistic circuits with features as small as 250nm. The peculiar hexagonal Fermi surface naturally leads to electron self-focusing effects in a magnetic field, well below the geometric limit associated with a circular Fermi surface. This super-geometric focusing can be quantitatively predicted for arbitrary device geometry, based on the hexagonal cyclotron orbits appearing in this material. These results suggest a novel class of ballistic electronic devices exploiting the unique transport characteristics of strongly faceted Fermi surfaces.
The temperature dependence of the optical properties of the delafossite PdCoO$_2$ has been measured in the a-b planes over a wide frequency range. The optical conductivity due to the free-carrier (intraband) response falls well below the interband transitions, allowing the plasma frequency to be determined from the $f$-sum rule. Drude-Lorentz fits to the complex optical conductivity yield estimates for the free-carrier plasma frequency and scattering rate. The in-plane plasma frequency has also been calculated using density functional theory. The experimentally-determined and calculated values for the plasma frequencies are all in good agreement; however, at low temperature the optically-determined scattering rate is much larger than the estimate for the transport scattering rate, indicating a strong frequency-dependent renormalization of the optical scattering rate. In addition to the expected in-plane infrared-active modes, two very strong features are observed that are attributed to the coupling of the in-plane carriers to the out-of-plane longitudinal optic modes.
Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semi-empirical atomistic tight-binding model coupled to a self consistent Poisson solver is used for the dispersion calculation. A semi-classical, ballistic FET model is used to evaluate the current-voltage characteristics. It is found that the total gate capacitance is degraded from the oxide capacitance value by 30% for wires in all the considered transport orientations ([100], [110], [111]). Different wire directions primarily influence the carrier velocities, which mainly determine the relative performance differences, while the total charge difference is weakly affected. The velocities depend on the effective mass and degeneracy of the dispersions. The [110] and secondly the [100] oriented 3nm thick nanowires examined, indicate the best ON-current performance compared to [111] wires. The dispersion features are strong functions of quantization. Effects such as valley splitting can lift the degeneracies especially for wires with cross section sides below 3nm. The effective masses also change significantly with quantization, and change differently for different transport orientations. For the cases of [100] and [111] wires the masses increase with quantization, however, in the [110] case, the mass decreases. The mass variations can be explained from the non-parabolicities and anisotropies that reside in the first Brillouin zone of silicon.
We present a systematic and comprehensive study of finite-size effects in diffusion quantum Monte Carlo calculations of metals. Several previously introduced schemes for correcting finite-size errors are compared for accuracy and efficiency and practical improvements are introduced. In particular, we test a simple but efficient method of finite-size correction based on an accurate combination of twist averaging and density functional theory. Our diffusion quantum Monte Carlo results for lithium and aluminum, as examples of metallic systems, demonstrate excellent agreement between all of the approaches considered.
We calculate the electron-phonon scattering and binding in semiconducting carbon nanotubes, within a tight binding model. The mobility is derived using a multi-band Boltzmann treatment. At high fields, the dominant scattering is inter-band scattering by LO phonons corresponding to the corners K of the graphene Brillouin zone. The drift velocity saturates at approximately half the graphene Fermi velocity. The calculated mobility as a function of temperature, electric field, and nanotube chirality are well reproduced by a simple interpolation formula. Polaronic binding give a band-gap renormalization of ~70 meV, an order of magnitude larger than expected. Coherence lengths can be quite long but are strongly energy dependent.
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