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Register a new userCharge-noise resilience of two-electron quantum dots in Si/SiGe heterostructures
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Ha\\c{s}im Ekmel Ercan
Publication date
2021
fields
Physics
and research's language is
English
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The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that both of these triplets are present in the typical operating regime, but that only the valley-excited triplet offers intrinsic protection against charge noise. We further show that this protection arises naturally in dots with stronger confinement. These results reveal an inherent advantage for silicon-based multi-electron qubits.
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Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy spectrum and tunneling to states outside the dot. The situation is even more complicated for silicon dots, due to the interplay between valley, orbital, and interaction energy scales. Here, we study two-electron wavefunctions in electrostatically confined quantum dots formed in a SiGe/Si/SiGe quantum well at zero magnetic field, using a combination of tight-binding and full-configuration-interaction (FCI) methods, and taking into account atomic-scale disorder at the quantum well interface. We model dots based on recent qubit experiments, which straddle the boundary between strongly interacting and weakly interacting systems, and display a rich and diverse range of behaviors. Our calculations show that strong electron-electron interactions, induced by weak confinement, can significantly suppress the low-lying, singlet-triplet (ST) excitation energy. However, when the valley-orbit interactions caused by interfacial disorder are weak, the ST splitting can approach its noninteracting value, even when the electron-electron interactions are strong and Wigner-molecule behavior is observed. These results have important implications for the rational design and fabrication of quantum dot qubits with predictable properties.
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over more than 13 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 $pi$ pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.
Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we investigate the dependence of low-frequency charge noise spectra on temperature and aluminum-oxide gate dielectric thickness in Si/SiGe quantum dots with overlapping gates. We find that charge noise increases with aluminum oxide thickness. We also find strong dot-to-dot variations in the temperature dependence of the noise magnitude and spectrum. These findings suggest that each quantum dot experiences noise caused by a distinct ensemble of two-level systems, each of which has a non-uniform distribution of thermal activation energies. Taken together, our results suggest that charge noise in Si/SiGe quantum dots originates at least in part from a non-uniform distribution of two-level systems near the surface of the semiconductor.
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.
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