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Register a new userA cavity-based optical antenna for color centers in diamond
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An efficient atom-photon-interface is a key requirement for the integration of solid-state emitters such as color centers in diamond into quantum technology applications. Just like other solid state emitters, however, their emission into free space is severely limited due to the high refractive index of the bulk host crystal. In this work, we present a planar optical antenna based on two silver mirrors coated on a thin single crystal diamond membrane, forming a planar Fabry-Perot cavity that improves the photon extraction from single tin vacancy (SnV) centers as well as their coupling to an excitation laser. Upon numerical optimization of the structure, we find theoretical enhancements in the collectible photon rate by a factor of 60 as compared to the bulk case. As a proof-of-principle demonstration, we fabricate single crystal diamond membranes with sub-$mu$m thickness and create SnV centers by ion implantation. Employing off-resonant excitation, we show a 6-fold enhancement of the collectible photon rate, yielding up to half a million photons per second from a single SnV center. At the same time, we observe a significant reduction of the required excitation power in accordance with theory, demonstrating the functionality of the cavity as an optical antenna. Due to its planar design, the antenna simultaneously provides similar enhancements for a large number of emitters inside the membrane. Furthermore, the monolithic structure provides high mechanical stability and straightforwardly enables operation under cryogenic conditions as required in most spin-photon interface implementations.
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Energy transfer between fluorescent probes lies at the heart of many applications ranging from bio-sensing and -imaging to enhanced photo-detection and light harvesting. In this work, we study Forster resonance energy transfer (FRET) between shallow defects in diamond --- nitrogen-vacancy (NV) centers --- and atomically-thin, two-dimensional materials --- tungsten diselenide (WSe$_2$). By means of fluorescence lifetime imaging, we demonstrate the occurrence of FRET in the WSe$_2$/NV system. Further, we show that in the coupled system, NV centers provide an additional excitation pathway for WSe$_2$ photoluminescence. Our results constitute the first step towards the realization of hybrid quantum systems involving single-crystal diamond and two-dimensional materials that may lead to new strategies for studying and controlling spin transfer phenomena and spin valley physics.
We present systematic measurements of longitudinal relaxation rates ($1/T_1$) of spin polarization in the ground state of the nitrogen-vacancy (NV$^-$) color center in synthetic diamond as a function of NV$^-$ concentration and magnetic field $B$. NV$^-$ centers were created by irradiating a Type 1b single-crystal diamond along the [100] axis with 200 keV electrons from a transmission electron microscope with varying doses to achieve spots of different NV$^-$ center concentrations. Values of ($1/T_1$) were measured for each spot as a function of $B$.
Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized, and decoherence due to the residual damage caused by the implantation process itself must be mitigated. To that end we have studied photoluminescence (PL) from NV$^-$, NV$^0$ and GR1 centers formed by ion implantation of 2MeV He ions over a wide range of fluences. The sample was annealed at $600^{circ}$C to minimize residual vacancy diffusion, allowing for the concurrent analysis of PL from NV centers and irradiation induced vacancies (GR1). We find non-monotic PL intensities with increasing ion fluence, monotonic increasing PL in NV$^0$/NV$^-$ and GR1/(NV$^0$ + NV$^1$) ratios, and increasing inhomogeneous broadening of the zero-phonon lines with increasing ion fluence. All these results shed important light on the optimal formation conditions for NV qubits. We apply our findings to an off-resonant photonic quantum memory scheme using vibronic sidebands.
Recent developments in magnetic field sensing with negatively charged nitrogen-vacancy centers (NV) in diamond employ magnetic-field (MF) dependent features in the photoluminescence (PL) and eliminate the need for microwaves (MW). Here, we study two approaches towards improving the magnetometric sensitivity using the ground-state level anti-crossing (GSLAC) feature of the NV center at a background MF of 102.4,mT. Following the first approach, we investigate the feature parameters for precise alignment in a dilute diamond sample; the second approach extends the sensing protocol into absorption via detection of the GSLAC in the diamond transmission of a 1042,nm laser beam. This leads to an increase of GSLAC contrast and results in a magnetometer with a sensitivity of 0.45,nT/$sqrt{text{Hz}}$ and a photon shot-noise limited sensitivity of 12.2 pT/$sqrt{rm{Hz}}$.
We employ a fiber-based optical microcavity with high finesse to study the enhancement of phonon sideband fluorescence of nitrogen-vacancy centers in nanodiamonds. Harnessing the full tunability and open access of the resonator, we explicitly demonstrate the scaling laws of the Purcell enhancement by varying both the mode volume and the quality factor over a large range. While changes in the emission lifetime remain small in the regime of a broadband emitter, we observe an increase of the emission spectral density by up to a factor of 300. This gives a direct measure of the Purcell factor that could be achieved with this resonator and an emitter whose linewidth is narrower than the cavity linewidth. Our results show a method for the realization of wavelength-tunable narrow-band single-photon sources and demonstrate a system that has the potential to reach the strong-coupling regime.
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