No Arabic abstract
The recently introduced theories of Topological Quantum Chemistry and Symmetry-Based Indicators (SIs) have facilitated the discovery of novel topological phases of matter and large-scale searches for materials with experimentally accessible topological properties at the Fermi energy ($E_F$). In this work, we have completed the first catalog of stable and fragile topology in all of the bands both at and away from $E_F$ in the Inorganic Crystal Structure Database (ICSD), which we have made accessible through a substantial upgrade of the Topological Materials Database. We have computed the electronic structure, topological class, and stable and fragile SIs of all bands in the 96,196 processable ICSD entries with stoichiometric chemical formulas in the presence and absence of SOC. Our calculations represent the completion of the symmetry-indicated band topology of known nonmagnetic materials, and a doubling of the number of materials accessible in previous topological material catalogs. Through our calculations, we discover the existence of repeat-topological (RTopo) materials with stable topological insulating (TI) gaps at and just below $E_F$, and supertopological (STopo) materials in which every isolated set of bands above the core shell is stable topological. Our findings recontextualize several previous experimental investigations of topological materials. We find that Ta$_2$NiSe$_5$ and Ta$_2$NiSe$_7$, respectively previously highlighted for hosting exciton-insulator and CDW phases, are 3D TIs in their normal states, and that rhombohedral bismuth and Bi$_2$Mg$_3$ are both RTopo and STopo materials. We present detailed statistics for our computations revealing that 52.65% of all materials are topological at $E_F$, roughly 2/3 of bands across all materials exhibit symmetry-indicated stable topology, and that shockingly, 87.99% of all materials contain at least one topological band.
Understanding how the arrangement of atoms and their interactions determine material behavior has been the dominant paradigm in materials science. A complementary approach is studying the organizational structure of networks of materials, defined on the basis of interactions between materials themselves. In this work, we present the phase diagram of all known inorganic materials, an extremely-dense complex network of nearly $2.1 times 10^4$ stable inorganic materials (nodes) connected with $41 times 10^6$ tie-lines (edges) defining their two-phase equilibria, as computed via high-throughput density functional theory. We show that the degree distribution of this network follows a lognormal form, with each material connected to on average 18% of the other materials in the network via tie-lines. Analyzing the structure and topology of this network has potential to uncover new materials knowledge inaccessible from the traditional bottom-up (atoms to materials) approaches. As an example, we derive a data-driven metric for the reactivity of a material as characterized by its connectedness in the network, and quantitatively identify the noblest materials in nature.
A new flash (ultra-rapid) spark plasma sintering method applicable to various materials systems, regardless of their electrical resistivity, is developed. A number of powders ranging from metals to electrically insulative ceramics have been successfully densified resulting in homogeneous microstructures within sintering times of 8-35 s. A finite element simulation reveals that the developed method, providing an extraordinary fast and homogeneous heating concentrated in the samples volume and punches, is applicable to all the different samples tested. The utilized uniquely controllable flash phenomenon is enabled by the combination of the electric current concentration around the sample and the confinement of the heat generated in this area by the lateral thermal contact resistance. The presented new method allows: extending flash sintering to nearly all materials, controlling sample shape by an added graphite die, and an energy efficient mass production of small and intermediate size objects. This approach represents also a potential venue for future investigations of flash sintering of complex shapes.
Owing to the natural compatibility with current semiconductor industry, silicon allotropes with diverse structural and electronic properties provide promising platforms for the next-generation Si-based devices. After screening 230 all-silicon crystals in the zeolite frameworks by first-principles calculations, we disclose two structurally stable Si allotropes (AHT-Si24 and VFI-Si36) containing open channels as topological node-line semimetals with Dirac nodal points forming a nodal loop in the kz=0 plane of Brillouin zone. Interestingly, their nodal loops protected by inversion and time-reversal symmetries are robust against SU(2) symmetry breaking due to very weak spin-orbit coupling of Si. When the nodal lines are projected onto the (001) surface, flat surface bands can be observed because of the nontrivial topology of the bulk band structures. Our discoveries extend the topological physics to the three-dimensional Si materials, highlighting the possibility to realize low-cost, nontoxic and semiconductor-compatible Si-based electronics with topological quantum states.
Exotic phases of matter emerge from the interplay between strong electron interactions and non-trivial topology. Owing to their lack of dispersion at the single-particle level, systems harboring flat bands are excellent testbeds for strongly interacting physics, with twisted bilayer graphene serving as a prime example. On the other hand, existing theoretical models for obtaining flat bands in crystalline materials, such as the line-graph formalism, are often too restrictive for real-life material realizations. Here we present a generic technique for constructing perfectly flat bands from bipartite crystalline lattices. Our prescription encapsulates and generalizes the various flat band models in the literature, being applicable to systems with any orbital content, with or without spin-orbit coupling. Using Topological Quantum Chemistry, we build a complete topological classification in terms of symmetry eigenvalues of all the gapped and gapless flat bands, for all 1651 Magnetic Space Groups. In addition, we derive criteria for the existence of symmetry-protected band touching points between the flat and dispersive bands, and we identify the gapped flat bands as prime candidates for fragile topological phases. Finally, we show that the set of all (gapped and gapless) perfectly flat bands is finitely generated and construct the corresponding bases for all 1651 Shubnikov Space Groups.
Designing new 2D systems with tunable properties is an important subject for science and technology. Starting from graphene, we developed an algorithm to systematically generate 2D carbon crystals belonging to the family of graphdiynes (GDYs) and having different structures and sp/sp2 carbon ratio. We analyze how structural and topological effects can tune the relative stability and the electronic behavior, to propose a rationale for the development of new systems with tailored properties. A total of 26 structures have been generated, including the already known polymorphs such as {alpha}-, b{eta}- and {gamma}-GDY. Periodic density functional theory calculations have been employed to optimize the 2D crystal structures and to compute the total energy, the band structure, and the density of states. Relative energies with respect to graphene have been found to increase when the values of carbon sp/sp2 ratio increase, following however different trends based on the peculiar topologies present in the crystals. These topologies also influence the band structure giving rise to semiconductors with a finite bandgap, zero-gap semiconductors displaying Dirac cones, or metallic systems. The different trends allow identifying some topological effects as possible guidelines in the design of new 2D carbon materials beyond graphene.