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Register a new userQuasi-static strain governing ultrafast spin dynamics
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The quasi-static strain (QSS) is the product generated by the lattice thermal expansion after ultrafast photo-excitation and the effects of thermal and QSS are inextricable. Nevertheless, the two phenomena with the same relaxation timescale should be treated separately because of their different fundamental actions to the ultrafast spin dynamics. By employing ultrafast Sagnac interferometry and magneto-optical Kerr effect, we quantitatively prove the existence of QSS, which has been disregarded, and decouple two effects counter-acting each other. Through the magnetoelastic energy analysis, rather we show that QSS in ferromagnets plays a governing role on ultrafast spin dynamics, which is opposite to what have been known on the basis of thermal effect. Our demonstration provides an essential way of analysis on ultrafast photo-induced phenomena.
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The magnetization orientation of a nanoscale ferromagnet can be manipulated using an electric current via the spin transfer effect. Time domain measurements of nanopillar devices at low temperatures have directly shown that magnetization dynamics and reversal occur coherently over a timescale of nanoseconds. By adjusting the shape of a spin torque waveform over a timescale comparable to the free precession period (100-400 ps), control of the magnetization dynamics in nanopillar devices should be possible. Here we report coherent control of the free layer magnetization in nanopillar devices using a pair of current pulses as narrow as 30 ps with adjustable amplitudes and delay. We show that the switching probability can be tuned over a broad range by timing the current pulses with the underlying free-precession orbits, and that the magnetization evolution remains coherent for more than 1 ns even at room temperature. Furthermore, we can selectively induce transitions along free-precession orbits and thereby manipulate the free magnetic moment motion. We expect this technique will be adopted for further elucidating the dynamics and dissipation processes in nanomagnets, and will provide an alternative for spin torque driven spintronic devices, such as resonantly pumping microwave oscillators, and ultimately, for efficient reversal of memory bits in magnetic random access memory (MRAM).
We develop a new perturbation method for studying quasi-neutral competition in a broad class of stochastic competition models, and apply it to the analysis of fixation of competing strains in two epidemic models. The first model is a two-strain generalization of the stochastic Susceptible-Infected-Susceptible (SIS) model. Here we extend previous results due to Parsons and Quince (2007), Parsons et al (2008) and Lin, Kim and Doering (2012). The second model, a two-strain generalization of the stochastic Susceptible-Infected-Recovered (SIR) model with population turnover, has not been studied previously. In each of the two models, when the basic reproduction numbers of the two strains are identical, a system with an infinite population size approaches a point on the deterministic coexistence line (CL): a straight line of fixed points in the phase space of sub-population sizes. Shot noise drives one of the strain populations to fixation, and the other to extinction, on a time scale proportional to the total population size. Our perturbation method explicitly tracks the dynamics of the probability distribution of the sub-populations in the vicinity of the CL. We argue that, whereas the slow strain has a competitive advantage for mathematically typical initial conditions, it is the fast strain that is more likely to win in the important situation when a few infectives of both strains are introduced into a susceptible population.
Spin relaxation and decoherence is at the heart of spintronics and spin-based quantum information science. Currently, theoretical approaches that can accurately predict spin relaxation of general solids including necessary scattering pathways and capable for ns to ms simulation time are urgently needed. We present a first-principles real-time density-matrix approach based on Lindblad dynamics to simulate ultrafast spin dynamics for general solid-state systems. Through the complete first-principles descriptions of pump, probe and scattering processes including electron-phonon, electron-impurity and electron-electron scatterings with self-consistent spin-orbit couplings, our method can directly simulate the ultrafast pump-probe measurements for coupled spin and electron dynamics over ns at any temperature and doping levels. We apply this method to a prototypical system GaAs and obtain excellent agreement with experiments. We found that the relative contributions of different scattering mechanisms and phonon modes differ considerably between spin and carrier relaxation processes. In sharp contrast to previous work based on model Hamiltonians, we point out that the electron-electron scattering is negligible at room temperature but becomes very important at low temperatures for spin relaxation in n-type GaAs. Most importantly, we examine the applicable conditions of the commonly-used Dyakonov-Perel relation, which may break down for individual scattering processes. Our work provides a predictive computational platform for spin relaxation in solids, which has unprecedented potentials for designing new materials ideal for spintronics and quantum information technology.
We investigate the ultrafast spin dynamics in an epitaxial hcp(1100) cobalt thin film. By performing pump-probe magneto-optical measurements with the magnetization along either the easy or hard magnetic axis, we determine the demagnetization and recovery times for the two axes. We observe a 35% slower dynamics along the easy magnetization axis, which we attribute to magneto-crystalline anisotropy of the electron-phonon coupling, supported by our ab initio calculations. This points towards an unambiguous and previously undisclosed role of anisotropic electron-lattice coupling in ultrafast magnetism.
A detailed defect energy level map was investigated for heterostructures of 26 unit cells of LaAlO3 on SrTiO3 prepared at a low oxygen partial pressure of 10-6 mbar. The origin is attributed to the presence of dominating oxygen defects in SrTiO3 substrate. Using femtosecond laser spectroscopy, the transient absorption and relaxation times for various transitions were determined. An ultrafast relaxation process of 2-3 picosecond from the conduction band to the closest defect level and a slower process of 70-92 picosecond from conduction band to intra-band defect level were observed. The results are discussed on the basis of propose defect-band diagram.
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