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Register a new userStrong magnetoresistance in a graphene Corbino disk at low magnetic fields
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We have measured magnetoresistance of suspended graphene in the Corbino geometry at magnetic fields up to $B=0.15,$T, i.e., in a regime uninfluenced by Shubnikov-de Haas oscillations. The low-temperature relative magnetotoresistance $[R(B)-R(0)]/R(0)$ amounts to $4000 B^2% $ at the Dirac point ($B$ in Tesla), with a quite weak temperature dependence below $30,$K. A decrease in the relative magnetoresistance by a factor of two is found when charge carrier density is increased to $|n| simeq 3 times 10^{-10}$ cm$^{-2}$. The gate dependence of the magnetoresistance allows us to characterize the role of scattering on long-range (Coulomb impurities, ripples) and short-range potential, as well as to separate the bulk resistance from the contact one. Furthermore, we find a shift in the position of the charge neutrality point with increasing magnetic field, which suggests that magnetic field changes the screening of Coulomb impurities around the Dirac point. The current noise of our device amounts to $10^{-23}$ A$^2$/$sqrt{textrm{Hz}}$ at $1,$kHz at $4,$K, which corresponds to a magnetic field sensitivity of $60$ nT/$sqrt{textrm{Hz}}$ in a background field of $0.15,$T.
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The semiclassical transport theory is especially powerful for investigating galvanomagnetic effects. Generally, the semiclassical theory is applicable only in weak fields because it does not consider Landau quantization. Herein, we extend the conventional semiclassical theory by considering Landau quantization through the field dependence of carrier density in semimetals. The extended semiclassical theory is applicable even in strong fields, where Landau quantization is noticeable. Using this new approach, we explain the qualitative change in the angular dependence of transverse magnetoresistance (TMR), anisotropic magnetoresistance (AMR), and planar Hall effect (PHE) in bismuth with an increase in the magnetic field. This unveils the puzzle of nontrivial field-induced changes in TMR, AMR, and PHE observed recently in semimetal bismuth.
We develop a theory for graphene magnetotransport in the presence of carrier spin polarization as induced, for example, by the application of an in-plane magnetic field ($B$) parallel to the 2D graphene layer. We predict a negative magnetoresistance $sigma propto B^2$ for intrinsic graphene, but for extrinsic graphene we find a non-monotonic magnetoresistance which is positive at lower magnetic fields (below the full spin-polarization) and negative at very high fields (above the full spin-polarization). The conductivity of the minority spin band $(-)$ electrons does not vanish as the minority carrier density ($n_-$) goes to zero. The residual conductivity of $(-)$ electrons at $n_- = 0$ is unique to graphene. We discuss experimental implications of our theory.
We observe an unusual behavior of the spin Hall magnetoresistance (SMR) measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, which is a tensile-strained LaCoO3 (LCO) thin film with the Curie temperature Tc=85K. The SMR displays a strong magnetic-field dependence below Tc, with the SMR amplitude continuing to increase (linearly) with increasing the field far beyond the saturation value of the ferromagnet. The SMR amplitude decreases gradually with raising the temperature across Tc and remains measurable even above Tc. Moreover, no hysteresis is observed in the field dependence of the SMR. These results indicate that a novel low-dimensional magnetic system forms on the surface of LCO and that the Pt/LCO interface decouples magnetically from the rest of the LCO thin film. To explain the experiment, we revisit the derivation of the SMR corrections and relate the spin-mixing conductances to the microscopic quantities describing the magnetism at the interface. Our results can be used as a technique to probe quantum magnetism on the surface of a magnetic insulator.
We demonstrate the existence of Giant proximity magnetoresistance (PMR) effect in a graphene spin valve where spin polarization is induced by a nearby magnetic insulator. PMR calculations were performed for yttrium iron garnet (YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS. We find a significant PMR (up to 100%) values defined as a relative change of graphene conductance with respect to parallel and antiparallel alignment of two proximity induced magnetic regions within graphene. Namely, for high Curie temperature (Tc) CFO and YIG insulators which are particularly important for applications, we obtain 22% and 77% at room temperature, respectively. For low Tc chalcogenides, EuO and EuS, the PMR is 100% in both cases. Furthermore, the PMR is robust with respect to system dimensions and edge type termination. Our findings show that it is possible to induce spin polarized currents in graphene with no direct injection through magnetic materials.
Graphene in the quantum Hall regime exhibits a multi-component structure due to the electronic spin and chirality degrees of freedom. While the applied field breaks the spin symmetry explicitly, we show that the fate of the chirality SU(2) symmetry is more involved: the leading symmetry-breaking terms differ in origin when the Hamiltonian is projected onto the central (n=0) rather than any of the other Landau levels. Our description at the lattice level leads to a Harper equation; in its continuum limit, the ratio of lattice constant a and magnetic length l_B assumes the role of a small control parameter in different guises. The leading symmetry-breaking terms are direct (n=0) and exchange (n different from 0) terms, which are algebraically small in a/l_B. We comment on the Haldane pseudopotentials for graphene, and evaluate the easy-plane anisotropy of the graphene ferromagnet.
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