No Arabic abstract
The key factors determining the emission bandwidth of thermally activated delayed fluorescence (TADF) are investi-gated by combining computational and experimental approaches. To achieve high internal quantum efficiencies (IQEs) in metal-free organic light emitting diode via TADF, the first triplet (T1) to first singlet (S1) reverse intersystem crossing (rISC) is promoted by configuring molecules in an electron donor-acceptor (D-A) alternation with a large di-hedral angle, which results in a small energy gap ({Delta}EST) between S1 and T1 levels. This allows for effective non-radiative up-conversion of triplet excitons to singlet excitons that fluoresce. However, this traditional molecular de-sign of TADF results in broad emission spectral bands (full-width at half-maximum = 70-100 nm). Despite reports suggesting that suppressing the D-A dihedral rotation narrows the emission band, the origin of emission broadening remains elusive. Indeed, our results suggest that the intrinsic TADF emission bandwidth is primarily determined by the charge transfer character of the molecule, rather than its propensity for rotational motion, which offers a renewed perspective on the rational molecular design of organic emitters exhibiting sharp emission spectra.
A quantum chemistry study of the first singlet (S1) and triplet (T1) excited states of phenylsulfonyl-carbazole compounds, proposed as useful thermally activated delayed fluorescence (TADF) emitters for organic light emitting diode (OLED) applications, was performed with the quantum Equation-Of-Motion Variational Quantum Eigensolver (qEOM-VQE) and Variational Quantum Deflation (VQD) algorithms on quantum simulators and devices. These quantum simulations were performed with double zeta quality basis sets on an active space comprising the highest occupied and lowest unoccupied molecular orbitals (HOMO, LUMO) of the TADF molecules. The differences in energy separations between S1 and T1 ($Delta E_{st}$) predicted by calculations on quantum simulators were found to be in excellent agreement with experimental data. Differences of 16 and 88 mHa with respect to exact energies were found for excited states by using the qEOM-VQE and VQD algorithms, respectively, to perform simulations on quantum devices without error mitigation. By utilizing error mitigation by state tomography to purify the quantum states and correct energy values, the large errors found for unmitigated results could be improved to differences of, at most, 3 mHa with respect to exact values. Consequently, excellent agreement could be found between values of $Delta E_{st}$ predicted by quantum simulations and those found in experiments.
The impact parameter dependence of color charge correlators in the proton is obtained from the light front formalism in light cone gauge. We include NLO corrections due to the $|qqqgrangle$ Fock state via light-cone perturbation theory. Near the center of the proton, the $b$-dependence of the correlations is very different from a transverse profile function. The resulting $t$-dependence of exclusive $J/Psi$ photoproduction transitions from exponential to power law at $|t| approx 1$ GeV$^2$. This prediction could be tested at upcoming DIS facilities or in nucleus-proton ultraperipheral collisions (UPCs).
Continuous-variable quantum key distribution employs the quadratures of a bosonic mode to establish a secret key between two remote parties, and this is usually achieved via a Gaussian modulation of coherent states. The resulting secret key rate depends not only on the loss and noise in the communication channel, but also on a series of data processing steps that are needed for transforming shared correlations into a final string of secret bits. Here we consider a Gaussian-modulated coherent-state protocol with homodyne detection in the general setting of composable finite-size security. After simulating the process of quantum communication, the output classical data is post-processed via procedures of parameter estimation, error correction, and privacy amplification. Correspondingly, we implement these steps in a Python-based library that allows one to investigate and optimize the protocol parameters to be used in practical experimental implementations.
Density-functional tight binding (DFTB) has become a popular form of approximate density-functional theory (DFT) based upon a minimal valence basis set and neglect of all but two center integrals. We report the results of our tests of a recent long-range correction (lc) for time-dependent (TD) lc-DFTB by carrying out TD-lc-DFTB fewest switches surface hopping (FSSH) calculations of energy and charge transfer times using the relatively new DFTBaby program. An advantage of this method is the ability to run enough trajectories to get meaningful ensemble averages. Our interest in the present work is less in determining exact energy and charge transfer rates than in understanding how the results of these calculations vary with the value of the range-separation parameter (Rlc = 1/{mu}) for a model organic solar cell heterojunction consisting of a van der Waals complex P/F made up of single pentacene (P) molecule together with a single buckminsterfullerene (F) molecule. The default value of Rlc = 3.03 a0 is found to be much too small as neither energy nor charge transfer is observed until Rlc ~ 10 a0. Tests at a single geometry show that best agreement with high-quality ab-initio spectra is obtained in the limit of no lc (i.e., very large Rlc.) A plot of energy and charge transfer rates as a function of Rlc is provided which suggests that a value of Rlc ~ 15 a0 yields the typical literature charge transfer time of about 100 fs. However, energy and charge transfer times become as high as ~ 300 fs for Rlc ~ 25 a0. A closer examination of the charge transfer process P*/F to P+/F- shows that the initial electron transfer is accompanied by a partial delocalization of the P hole onto F which then relocalizes back onto P, consistent with a polaron-like picture in which the nuclei relax to stabilize the resultant redistribution of charges.
Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, we report the generation and direct integration of QEs in an aluminium nitride-based photonic integrated circuit platform. For individual waveguide-integrated QEs, we measure an off-chip count rate exceeding $6 times 10^{4}$ counts per second (cps) (saturation rate > $8.6 times 10^{4}$ cps). In an unpatterned thin-film sample, we measure antibunching with $g^{(2)}(0) sim 0.05$ and photon count rates exceeding $8 times 10^{5}$ cps (saturation rate > $1 times 10^{6}$ cps). Although spin and detailed optical linewidth measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.