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Register a new userBright high-purity quantum emitters in aluminium nitride integrated photonics
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Solid-state quantum emitters (QEs) are fundamental in photonic-based quantum information processing. There is strong interest to develop high-quality QEs in III-nitride semiconductors because of their sophisticated manufacturing driven by large and growing applications in optoelectronics, high voltage power transistors, and microwave amplifiers. Here, we report the generation and direct integration of QEs in an aluminium nitride-based photonic integrated circuit platform. For individual waveguide-integrated QEs, we measure an off-chip count rate exceeding $6 times 10^{4}$ counts per second (cps) (saturation rate > $8.6 times 10^{4}$ cps). In an unpatterned thin-film sample, we measure antibunching with $g^{(2)}(0) sim 0.05$ and photon count rates exceeding $8 times 10^{5}$ cps (saturation rate > $1 times 10^{6}$ cps). Although spin and detailed optical linewidth measurements are left for future work, these results already show the potential for high-quality QEs monolithically integrated in a wide range of III-nitride device technologies that would enable new quantum device opportunities and industrial scalability.
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Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical applications. Despite its intriguing optical proprieties, nonlinear applications of GaN have rarely been studied due to the relatively high optical loss of GaN waveguides (2 dB/cm). In this letter, we report GaNOI microresonator with intrinsic quality factor over 2 million, corresponding to an optical loss of 0.26 dB/cm. Parametric oscillation threshold power as low as 8.8 mW is demonstrated, and the experimentally extracted nonlinear index of GaN at telecom wavelengths is estimated to be n2 = 1.2*10 -18 m2W-1, which is comparable with silicon. Single soliton generation in GaN is implemented by an auxiliary laser pumping scheme, so as to mitigate the high thermorefractive effect in GaN. The large intrinsic nonlinear refractive index, together with its broadband transparency window and high refractive index contrast, make GaNOI a most balanced platform for chip-scale nonlinear applications.
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, nonoptimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output through the SiN waveguide and sub-kHz fundamental linewidth, addressing all of the aforementioned issues. We also show Hertz-level linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-$Q$ SiN resonators, mark a milestone towards a fully-integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.
Integrated nonlinear photonic circuits received rapid development in recent years, providing all-optical functionalities enabled by cavity-enhanced photon-photon interaction for classical and quantum applications. A high-efficiency fiber-to-chip interface is key to the use of these integrated photonic circuits for quantum information tasks, as photon loss is a major source that weakens quantum protocols. Here, overcoming material and fabrication limitation of thin-film aluminum nitride by adopting a stepwise waveguiding scheme, we demonstrate low-loss adiabatic fiber-optic couplers in aluminum nitride films with a substantial thickness (600 nm) for optimized nonlinear photon interaction. For telecom (1550 nm) and near-visible (780 nm) transverse magnetic-polarized light, the measured insertion loss of the fiber-optic coupler is -0.97 dB and -2.6 dB, respectively. Our results will facilitate the use of aluminum nitride integrated photonic circuits as efficient quantum resources for generation of entangled photons and squeezed light on microchips.
Nanoscale optical thermometry is a promising non-contact route for measuring local temperature with both high sensitivity and spatial resolution. In this work, we present a deterministic optical thermometry technique based on quantum emitters in nanoscale hexagonal boron-nitride. We show that these nanothermometers exhibit better performance than that of homologous, all-optical nanothermometers both in sensitivity and range of working temperature. We demonstrate their effectiveness as nanothermometers by monitoring the local temperature at specific locations in a variety of custom-built micro-circuits. This work opens new avenues for nanoscale temperature measurements and heat flow studies in miniaturized, integrated devices.
We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.
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