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Register a new userDiagnostics for ultrashort X-ray pulses using silicon trackers
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The spectrum of laser-plasma generated X-rays is very important, it characterizes electron dynamics in plasma and is basic for applications. However, the accuracies and efficiencies of existing methods to diagnose the spectrum of laser-plasma based X-ray pulse are not very high, especially in the range of several hundred keV. In this study, a new method based on electron tracks detection to measure the spectrum of laser-plasma produced X-ray pulses is proposed and demonstrated. Laser-plasma generated X-rays are scattered in a multi-pixel silicon tracker. Energies and scattering directions of Compton electrons can be extracted from the response of the detector, and then the spectrum of X-rays can be reconstructed. Simulations indicate that the energy resolution of this method is approximately 20% for X-rays from 200 to 550 keV for a silicon-on-insulator pixel detector with 12 $rm mu$m pixel pitch and 500 $rm mu$m depletion region thickness. The results of a proof-of-principle experiment based on a Timepix3 detector are also shown.
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Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, schedule and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances required to the future silicon tracking systems at the various new facilities, and then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog readout are exploited to meet these new demands.
The resolution function of a spectrometer based on a strongly bent single crystal (bending radius of 10 cm or less) is evaluated. It is shown that the resolution is controlled by two parameters, (i) the ratio of the lattice spacing of the chosen reflection to the crystal thickness and (ii) a single parameter comprising crystal thickness, its bending radius, and anisotropic elastic constants of the chosen crystal. Diamond, due to its unique elastic properties, can provide notably higher resolution than silicon. The results allow to optimize the parameters of bent crystal spectrometers for the hard X-ray free electron laser sources.
An ultra thin silicon detector called U3DTHIN has been designed and built for neutral particle analyzers (NPA) and thermal neutron detection. The main purpose of this detector is to provide a state-of-the-art solution for detector system of NPAs for the ITER experimental reactor and to be used in combination with a Boron conversion layer for the detection of thermal neutrons. Currently the NPAs are using very thin scintillator - photomultiplier tube, and their main drawbacks are poor energy resolution, intrinsic scintillation nonlinearity, relative low count rate capability and finally poor signal to background discrimination power for the low energy channels. The proposed U3DTHIN detector is based on very thin sensitive substrate which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for the neutron and gamma radiation. To achieve a very fast charge collection of the carriers generated by the ions detection a 3D electrode structure[5] has been introduced in the sensitive volume of the detector. One of the most innovative features of these detectors has been the optimal combination of the thin entrance window and the sensitive substrate thickness, to accommodate very large energy dynamic range of the detected ions. An entrance window with a thickness of tens of nanometers together with a sensitive substrate thickness varying from less than 5 microns, to detect the lowest energetic ions to 20 microns for the height ones has been selected after simulations with GEANT4. To increase the signal to background ratio the detector will operate in spectroscopy regime allowing to perform pulse-height analysis. The technology used to fabricate these 3D ultra thin detectors developed at Centro Nacional de Microelectronica in Barcelona and the first signals from an alpha source (241Am) will presented
Structural studies of biological macromolecules are severely limited by radiation damage. Traditional crystallography curbs the effects of damage by spreading damage over many copies of the molecule of interest. X-ray lasers, such as the recently built LINAC Coherent Light Source (LCLS), offer an additional opportunity for limiting damage by out-running damage processes with ultrashort and very intense X-ray pulses. Such pulses may allow the imaging of single molecules, clusters or nanoparticles, but coherent flash imaging will also open up new avenues for structural studies on nano- and micro-crystalline substances. This paper addresses the theoretical potentials and limitations of nanocrystallography with extremely intense coherent X-ray pulses. We use urea nanocrystals as a model for generic biological substances and simulate primary and secondary ionization dynamics in the crystalline sample. Our results establish conditions for ultrafast nanocrystallography diffraction experiments as a function of fluence and pulse duration.
The interaction of 32.5 and 6 nm ultrashort X-ray pulses with the solid materials B4C, SiC and Si is simulated with a non-local thermodynamic equilibrium (NLTE) radiation transfer code. We study the ionization dynamics as function of depth in the material, modifications of the opacity during irradiation and estimate crater depth. Furthermore, we compare the estimated crater depth with experimental data, for fluences up to 2.2 J/cm2. Our results show that at 32.5 nm irradiation, the opacity changes with less than a factor of 2 for B4C and Si and a factor of 3 for SiC, for fluences up to 200 J/cm2. At a laser wavelength of 6 nm, the model predicts a dramatic decrease in opacity due to the weak inverse bremsstrahlung, increasing the crater depth for high fluences.
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