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Register a new userKinetic phase diagram for a binary system near the transition to diffusionless solidification
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G.L. Buchbinder
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The rapid solidification of a binary mixture in the region of the interface velocities $V$ close to the diffusion speed in the bulk of the liquid phase $V_D$ is considered within the framework of the local nonequilibrium approach. In this high-speed region the derivation of the analytical expression for the response function temperature-velocity representing kinetic phase diagram is given without using the concept of the equilibrium phase diagram. The modes of movement of the interface both without and with the drag effect are analyzed. It is shown that the drag effect can be accompanied by a local interface temperature maximum at $V = V_D$.
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The process of rapid solidification of a binary mixture is considered in the framework of local nonequilibrium model (LNM) based on the assumption that there is no local equilibrium in solute diffusion in the bulk liquid and at the solid-liquid interface. According to LNM the transition to complete solute trapping and diffusionless solidification occurs at a finite interface velocity $V=V_D$, where $V_D$ is the diffusion speed in bulk liquid. In the present work, the boundary conditions at the phase interface moving with the velocity $V$ close to $V_D$ ($V lesssim V_D$) have been derived to find the non-equilibrium solute partition coefficient. In the high-speed region, its comparison with the partition coefficient from the work [Phys. Rev. E 76 (2007) 031606] is given.
Advanced phase-field techniques have been applied to address various aspects of polycrystalline solidification including different modes of crystal nucleation. The height of the nucleation barrier has been determined by solving the appropriate Euler-Lagrange equations. The examples shown include the comparison of various models of homogeneous crystal nucleation with atomistic simulations for the single component hard-sphere fluid. Extending previous work for pure systems (Granasy L, Pusztai T, Saylor D and Warren J A 2007 Phys. Rev. Lett. 98 art no 035703), heterogeneous nucleation in unary and binary systems is described via introducing boundary conditions that realize the desired contact angle. A quaternion representation of crystallographic orientation of the individual particles (outlined in Pusztai T, Bortel G and Granasy L 2005 Europhys. Lett. 71 131) has been applied for modeling a broad variety of polycrystalline structures including crystal sheaves, spherulites and those built of crystals with dendritic, cubic, rhombododecahedral, truncated octahedral growth morphologies. Finally, we present illustrative results for dendritic polycrystal-line solidification obtained using an atomistic phase-field model.
We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$mu$m spaced Au leads. The structure initially is in highly-conductive state, while it can be switched to low-conductive one at high currents due to the Joule heating of the sample, which should be identified as $alpha$-$Pnma$ -- $beta$-$Cmcm$ diffusionless martensitic phase transition in SnSe. For highly-conductive state, there is significant hysteresis in $dI/dV(V)$ curves at low biases, so the sample conductance depends on the sign of the applied bias change. This hysteretic behavior reflects slow relaxation due to additional polarization current in the ferroelectric SnSe phase, which we confirm by direct measurement of time-dependent relaxation curves. In contrast, we observe no noticeable relaxation or low-bias hysteresis for the quenched $beta$-$Cmcm$ low-conductive phase. Thus, ferroelectric behavior can be switched on or off in transport through hybrid SnSe structure by controllable $alpha$-$Pnma$ -- $beta$-$Cmcm$ phase transition. This result can also be important for nonvolatile memory development, e.g. phase change memory for neuromorphic computations or other applications in artificial intelligence and modern electronics.
Hydrogen has been the essential element in the development of atomic and molecular physics1). Moving to the properties of dense hydrogen has appeared a good deal more complex than originally thought by Wigner and Hungtinton in their seminal paper predicting metal hydrogen2): the electrons and the protons are strongly coupled to each other and ultimately must be treated equally3)4). The determination of how and when molecular solid hydrogen will transform into a metal is the stepping stone towards a full understanding of the quantum-many body properties of dense hydrogen. The quest for metal hydrogen has pushed major developments of modern experimental high pressure physics, yet the various claims of its observation over the past 30 years have remained controversial5)6)7). Here we show a first order phase transition near 425 GPa from insulator molecular solid hydrogen to metal hydrogen. Pressure in excess of 400 GPa could be achieved by using the recently developed Toroidal Diamond Anvil Cell (T-DAC)8). The structural and electronic properties of dense solid hydrogen at 80 K have been characterized by synchrotron infrared spectroscopy. The continuous vibron frequency shift and the electronic band gap closure down to 0.5 eV, both linearly evolving with pressure, point to the stability of the insulator C2/c-24 phase up to the metallic transition. Upon pressure release, the metallic state transforms back to the C2/c-24 phase with almost no hysteresis, hence suggesting that the metallization proceeds through a structural transformation within the molecular solid, presumably to the Cmca-12 structure. Our results are in good agreement with the scenario recently disclosed by an advanced calculation able to capture many-body electronic correlations9).
We simulate solidification in a narrow channel through the use of a phase-field model with an adaptive grid. In different regimes, we find that the solid can grow in fingerlike steady-state shapes, or become unstable, exhibiting unsteady growth. At low melt undercoolings, we find good agreement between our results, theoretical predictions, and experiment. For high undercoolings, we report evidence for a new stable steady-state finger shape which exists in experimentally accessible ranges for typical materials.
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