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Register a new userMorphotropic Phase Boundary in Sm-Substituted BiFeO3 Ceramics: Local vs Microscopic Approaches
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Added by
Andrius Pakalniskis
Publication date
2021
fields
Physics
and research's language is
English
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Samarium substituted bismuth ferrite (BiFeO3) ceramics prepared by sol-gel synthesis method were studied using both local scale and microscopic measurement techniques in order to clarify an evolution of the crystal structure of the compounds across the morphotropic phase boundary region. X-ray diffraction analysis, transmission and scanning electron microscopies, XPS, EDS/EDX experiments and piezoresponse force microscopy were used to study the structural transitions from the polar active rhombohedral phase to the anti-polar orthorhombic phase and then to the non-polar orthorhombic phase, observed in the Bi1-xSmxFeO3 compounds within the concentration range of 0.08 < x < 0.2. The results obtained by microscopic techniques testify that the compounds in the range of 0.12 < x < 0.15 are characterized by two phase structural state formed by a coexistence of the rhombohedral and the anti-polar orthorhombic phases; two phase structural state observed in the compounds with 0.15 < x < 0.18 is associated with a coexistence of the anti-polar orthorhombic and the non-polar orthorhombic phases. Local scale measurements have revealed a notable difference in the concentration range ascribed to the morphotropic phase boundary estimated by microscopic measurements, the obtained results testify a wider concentration range ascribed to a coexistence of different structural phases, the background of the mentioned difference is discussed.
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We have investigated heteroepitaxial films of Sm-doped BiFeO3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron X-ray diffraction, carried out in a temperature range of 25C to 700C, reveals substantial phase coexistence as one changes temperature to crossover from a low-temperature PbZrO3-like phase to a high-temperature orthorhombic phase. We also examine changes due to strain for films greater or less than the critical thickness for misfit dislocation formation. Particularly, we note that thicker films exhibit a substantial volume collapse associated with the structural transition that is suppressed in strained thin films.
Morphotropic phase boundaries (MPBs) show substantial piezoelectric and dielectric responses, which have practical applications. The predicted existence of MPB in HfO2-ZrO2 solid solution thin film has provided a new way to increase the dielectric properties of a silicon-compatible device. Here, we present a new fabrication design by which the density of MPB and consequently the dielectric constant of HfO2-ZrO2 thin film was considerably increased. The density of MPB was controlled by fabrication of a 10-nm [1 nm-Hf0.5Zr0.5O2 (Ferroelectric)/1 nm-ZrO2 (Antiferroelectric)] nanolaminate followed by an appropriate annealing process. The coexistence of orthorhombic and tetragonal structures, which are the origins of ferroelectric (FE) and antiferroelectric (AFE) behaviors, respectively, was structurally confirmed, and a double hysteresis loop that originates from AFE ordering, with some remnant polarization that originates from FE ordering, was observed in P-E curve. A remarkable increase in dielectric constant compared to the conventional HfO2-ZrO2 thin film was achieved by controlling the FE-AFE ratio. The fabrication process was performed at low temperature and the device is compatible with silicon technology, so the new design yields a device that has possible applications in near-future electronics.
Two-dimensional polarity is intriguing but remains in the early stage. Here a structural evolution diagram is established for GeS monolayer, which leads a noncollinear ferrielectric $delta$-phase energetically as stable as the ferroelectric $alpha$-phase. Its ferrielectricity is induced by the phonon frustration, i.e., the competition between ferroelectric and antiferroelectric modes, providing more routes to tune its polarity. Besides its prominent properties like large band gap, large polarization, and high Curie temperature, more interestingly, the morphotropic phase boundary between $alpha$- and $delta$-phases is highly possible, which is crucial to obtain giant piezoelectricity for lead-free applications.
We demonstrate the robustness of polarization in ultrathin compressive strained BiFeO$_3$ single layers and heterostructures during epitaxial thin-film growth. Using in-situ optical second harmonic generation (ISHG), we explore the emergence of ferroelectric phases at the strain-driven morphotropic phase boundary in the ultrathin regime. We find that the epitaxial films grow in the ferroelectric tetragonal (T-) phase without exhibition of a critical thickness. The robustness of this high-temperature T-phase against depolarizing-field effects is further demonstrated during the growth of capacitor-like (metal|ferroelectric|metal) heterostructures. Using temperature-dependent ISHG post-deposition, we identify the thickness-dependent onset of the monoclinic distortion in the T-matrix and trace the signature of the subsequent emergence of the strain-relaxed rhombohedral-like monoclinic phase. Our results show that strain-driven T-phase stabilization in BiFeO$_3$ yields a prominent candidate material for realizing ultrathin ferroelectric devices.
Recently, based on the phase-field modeling, it was predicted that Hf1-xZrxO2 (HZO) exhibits the morphotropic phase boundary (MPB) in its compositional phase diagram. Here, we investigate the effect of structural changes between tetragonal (t) and orthorhombic (o) phases on the ferroelectric and dielectric properties of HZO films to probe the existence of MPB region. The structural analysis show that by adjusting the ozone dosage during the atomic layer deposition process and annealing conditions, different ratios of t- to o-phases (f_(t/o) ) were achieved which consequently affect the ferroelectric and dielectric properties of the samples. Polarization versus electric field measurements show a remarkable increase in ferroelectric characteristics (Pr and Ec) of the sample that contains the minimum t-phase fraction (f_(t/o)~ 0.04). This sample shows the lowest dielectric constant compared to the other samples which is due to the formation of ferroelectric o-phase. The sample that contains the maximum f_(t/o)~ 0.41 demonstrates the highest dielectric response. By adjusting the f_(t/o), a large dielectric constant of ~ 55 is achieved. Our study reveals a direct relation between f_(t/o) and dielectric constant of HZO thin films which can be understood by considering the density of MPB region.
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